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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China IGBT 7 module Infineon IKW30N65ET7 featuring low VCE saturation and short tail
China IGBT 7 module Infineon IKW30N65ET7 featuring low VCE saturation and short tail

  1. China IGBT 7 module Infineon IKW30N65ET7 featuring low VCE saturation and short tail

IGBT 7 module Infineon IKW30N65ET7 featuring low VCE saturation and short tail

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Td(off) 245ns
Pd - Power Dissipation 188W
Td(on) 19ns
Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 20pF
IGBT Type FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4.3V@0.3mA
Gate Charge(Qg) 180nC@15V
Operating Temperature -40℃~+175℃
Reverse Recovery Time(trr) 80ns
Switching Energy(Eoff) 500uJ
Turn-On Energy (Eon) 590uJ
Input Capacitance(Cies) 1.9nF
Pulsed Current- Forward(Ifm) 90A
Output Capacitance(Coes) 62pF
Description 188W 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS
Mfr. Part # IKW30N65ET7
Package TO-247-3
Model Number IKW30N65ET7

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  1. Product Details
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Product Specification

Td(off) 245ns Pd - Power Dissipation 188W
Td(on) 19ns Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 20pF IGBT Type FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4.3V@0.3mA Gate Charge(Qg) 180nC@15V
Operating Temperature -40℃~+175℃ Reverse Recovery Time(trr) 80ns
Switching Energy(Eoff) 500uJ Turn-On Energy (Eon) 590uJ
Input Capacitance(Cies) 1.9nF Pulsed Current- Forward(Ifm) 90A
Output Capacitance(Coes) 62pF Description 188W 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS
Mfr. Part # IKW30N65ET7 Package TO-247-3
Model Number IKW30N65ET7

Product Overview

The IKW30N65ET7 is a low-loss IGBT 7 module featuring Trench and Fieldstop technology. It offers a high collector-emitter voltage of 650 V and a continuous collector current of 30 A. Key advantages include very low VCE,sat, low turn-off losses, short tail current, and reduced EMI. It is equipped with a very soft, fast recovery antiparallel diode and supports a maximum junction temperature of 175C. This product is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon
  • Technology: IGBT 7 with Trench and Fieldstop
  • Compliance: Pb-free lead plating, RoHS compliant
  • Qualification: JEDEC for target applications, Qualified for industrial applications
  • Models: PSpice Models available

Technical Specifications

ParameterSymbolNote or test conditionValuesUnit
Package
Internal emitter inductanceLEmeasured 5 mm (0.197 in.) from case13nH
Storage temperatureTstg-55 to 150C
Soldering temperatureTsoldwave soldering 1.6 mm (0.063 in.) from case for 10 s260C
Mounting torqueMM3 screw, Maximum of mounting processes0.6Nm
Thermal resistance, junction-ambientRth(j-a)40K/W
IGBT thermal resistance, junction-caseRth(j-c)0.8K/W
Diode thermal resistance, junction-caseRth(j-c)1.1K/W
IGBT - Maximum Rated Values
Collector-emitter voltageVCETvj 25 C650V
DC collector current, limited by TvjmaxICTc = 25 C60A
DC collector current, limited by TvjmaxICTc = 100 C39.1A
Pulsed collector current, tp limited by TvjmaxICpulse90A
Gate-emitter voltageVGE20V
Transient gate-emitter voltageVGEtp 10 s, D < 0.0130V
Short-circuit withstand timetSCVGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits 1.0 s5 s (VCC 330 V, Tvj = 100 C)
3 s (VCC 400 V, Tvj = 150 C)
s
Power dissipationPtotTc = 25 C188W
Power dissipationPtotTc = 100 C94W
IGBT - Characteristic Values
Collector-emitter saturation voltageVCEsatIC = 30 A, VGE = 15 V1.35 - 1.65 (Tvj = 25 C)
1.5 (Tvj = 125 C)
1.6 (Tvj = 175 C)
V
Gate-emitter threshold voltageVGEthIC = 0.3 mA, VCE = VGE4.3 - 5.7V
Zero gate-voltage collector currentICESVCE = 650 V, VGE = 0 V40 A (Tvj = 25 C)
800 A (Tvj = 175 C)
A
Gate-emitter leakage currentIGESVCE = 0 V, VGE = 20 V100nA
TransconductancegfsIC = 30 A, VCE = 20 V15S
Short-circuit collector currentISCVCC 400 V, VGE = 15 V, tSC 3 s, Allowed number of short circuits < 1000, Time between short circuits 1.0 s, Tvj = 150 C160A
Input capacitanceCiesVCE = 25 V, VGE = 0 V, f = 1000 kHz1900pF
Output capacitanceCoesVCE = 25 V, VGE = 0 V, f = 1000 kHz62pF
Reverse transfer capacitanceCresVCE = 25 V, VGE = 0 V, f = 1000 kHz20pF
Gate chargeQGIC = 30 A, VGE = 15 V, VCC = 520 V180nC
Turn-on delay timetd(on)VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF19 - 22ns
Rise time (inductive load)trVCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF7 - 15ns
Turn-off delay timetd(off)VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF245 - 355ns
Fall time (inductive load)tfVCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF9 - 53ns
Turn-on energyEonVCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF0.26 - 0.96mJ
Turn-off energyEoffVCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF0.22 - 0.9mJ
Total switching energyEtsVCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF0.48 - 1.86mJ
Operating junction temperatureTvj-40 to 175C
Diode - Maximum Rated Values
Repetitive peak reverse voltageVRRMTvj 25 C650V
Diode forward current, limited by bondwireIFTc = 25 C40A
Diode forward current, limited by bondwireIFTc = 100 C34.8A
Diode pulsed current, tp limited by TvjmaxIFpulse90A
Diode - Characteristic Values
Diode forward voltageVFIF = 30 A1.55 - 2 (Tvj = 25 C)
1.6 (Tvj = 125 C)
1.55 (Tvj = 175 C)
V
Diode reverse recovery timetrrVR = 400 V55 - 140ns
Diode reverse recovery chargeQrrVR = 400 V0.48 - 1.9C
Diode peak reverse recovery currentIrrmVR = 400 V18.4 - 25.8A
Diode peak rate of fall of reverse recovery currentdirr/dtVR = 400 V205 - 440A/s
Operating junction temperatureTvj-40 to 175C

Potential Applications

  • Servo drives
  • General purpose drives (GPD)
  • Industrial power supplies
  • Industrial UPS
  • Industrial SMPS
  • Energy generation
  • Solar optimizer
  • Solar string inverter

2411141759_Infineon-IKW30N65ET7_C5359096.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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