Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 156W |
| Td(off) | 150ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 20pF |
| Input Capacitance(Cies) | 810pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@0.5mA |
| Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 90nC@15V |
| Pulsed Current- Forward(Ifm) | 45A |
| Output Capacitance(Coes) | 24pF |
| Switching Energy(Eoff) | 30uJ |
| Description | IGBT 1.2kV 15A 156W Through Hole TO-247-3 |
| Mfr. Part # | IHW15N120E1 |
| Package | TO-247-3 |
| Model Number | IHW15N120E1 |
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Product Specification
| Pd - Power Dissipation | 156W | Td(off) | 150ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | Reverse Transfer Capacitance (Cres) | 20pF |
| Input Capacitance(Cies) | 810pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@0.5mA |
| Operating Temperature | -40℃~+150℃ | Gate Charge(Qg) | 90nC@15V |
| Pulsed Current- Forward(Ifm) | 45A | Output Capacitance(Coes) | 24pF |
| Switching Energy(Eoff) | 30uJ | Description | IGBT 1.2kV 15A 156W Through Hole TO-247-3 |
| Mfr. Part # | IHW15N120E1 | Package | TO-247-3 |
| Model Number | IHW15N120E1 |
The IHW15N120E1 is a Resonant Soft-Switching Series Reverse conducting IGBT with a monolithic body diode, designed for soft commutation applications. It features TRENCHSTOPTM technology for tight parameter distribution, high ruggedness, and easy parallel switching. This IGBT is Pb-free and RoHS compliant, suitable for industrial power control applications.
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
| IHW15N120E1 | 1200V | 15A | 1.5V | 150C | H15ME1 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.50mA | 1200 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 15.0A, Tvj = 25C | 1.50 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 15.0A, Tvj = 25C | 1.90 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.50mA, VCE = VGE | 4.0 | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tvj = 25C | 300 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 15.0A | 14.0 | S |
| Integrated gate resistor | rG | 6.8 | ||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 810 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 24 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 20 | pF |
| Gate charge | QG | VCC = 960V, IC = 15.0A, VGE = 15V | 90.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2 | 130 | ns |
| Fall time | tf | Tvj = 25C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2 | 1000 | ns |
| Turn-off energy, soft switching | Eoff | Tvj = 25C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 50.0V/s | 0.03 | mJ |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2 | 150 | ns |
| Fall time | tf | Tvj = 25C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2 | 790 | ns |
| Turn-off energy, soft switching | Eoff | Tvj = 25C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 150.0V/s | 0.17 | mJ |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2 | 140 | ns |
| Fall time | tf | Tvj = 150C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2 | 1800 | ns |
| Turn-off energy, soft switching | Eoff | Tvj = 150C, VCC = 65V, IC = 15.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 50.0V/s | 0.07 | mJ |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2 | 150 | ns |
| Fall time | tf | Tvj = 150C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2 | 1300 | ns |
| Turn-off energy, soft switching | Eoff | Tvj = 150C, VCC = 195V, IC = 45.0A, VGE = 0.0/18.0V, RG(off) = 10.2, dv/dt = 150.0V/s | 0.36 | mJ |
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.80 | K/W | |
| Diode thermal resistance, junction - case | Rth(j-c) | 0.80 | K/W | |
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W | |
| Power dissipation | Ptot | TC = 25C | 156.0 | W |
| Power dissipation | Ptot | TC = 100C | 62.2 | W |
| Operating junction temperature | Tvj | -40...+150 | C | |
| Storage temperature | Tstg | -55...+150 | C | |
| Soldering temperature, wave soldering 1.6mm from case for 10s | 260 | C | ||
| Mounting torque, M3 screw | M | Maximum of mounting processes | 0.6 | Nm |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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