| Description | Single IGBTs RoHS |
| Mfr. Part # | FF450R12KE7HPSA1 |
| Model Number | FF450R12KE7HPSA1 |
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Product Specification
| Description | Single IGBTs RoHS | Mfr. Part # | FF450R12KE7HPSA1 |
| Model Number | FF450R12KE7HPSA1 |
The 62 mm C-Series module, model FF450R12KE7, features TRENCHSTOPIGBT7 technology with an emitter controlled 7 diode. It offers high power density, a 1200 V collector-emitter voltage, and a nominal collector current of 450 A (ICRM 900 A). This module is designed with excellent electrical and mechanical features, including positive temperature coefficient for VCE,sat and high creepage/clearance distances, making it suitable for demanding industrial applications.
| Parameter | Symbol | Note or test condition | Values | Unit |
| IGBT, T1 / T2 | ||||
| Collector-emitter voltage | VCES | 1200 | V | |
| Continuous DC collector current | ICDC | Tvj max = 175 C, TC = 100 C | 450 | A |
| Maximum RMS module DC- terminal current | ItRMS | TTerminal = 115 C, TC = 90 C | 650 | A |
| Repetitive peak collector current | ICRM | tp limited by Tvj op | 900 | A |
| Gate-emitter peak voltage | VGES | 20 | V | |
| Collector-emitter saturation voltage | VCE sat | IC = 450 A, VGE = 15 V | 1.50 - 1.75 | V |
| Gate threshold voltage | VGEth | IC = 9 mA, VCE = VGE, Tvj = 25 C | 5.15 - 6.45 | V |
| Gate charge | QG | VGE = 15 V, VCC = 600 V | 7.41 | C |
| Collector-emitter cut-off current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 0.1 | mA |
| Gate-emitter leakage current | IGES | VCE = 0 V, VGE = 20 V, Tvj = 25 C | 100 | nA |
| Turn-on delay time (inductive load) | tdon | IC = 450 A, VCC = 600 V, VGE = 15 V, RGon = 0.51 | 0.370 - 0.389 | s |
| Rise time (inductive load) | tr | IC = 450 A, VCC = 600 V, VGE = 15 V, RGon = 0.51 | 0.043 - 0.052 | s |
| Turn-off delay time (inductive load) | tdoff | IC = 450 A, VCC = 600 V, VGE = 15 V, RGoff = 1.5 | 0.522 - 0.623 | s |
| Fall time (inductive load) | tf | IC = 450 A, VCC = 600 V, VGE = 15 V, RGoff = 1.5 | 0.124 - 0.351 | s |
| Turn-on energy loss per pulse | Eon | IC = 450 A, VCC = 600 V, L = 25 nH, VGE = 15 V, RGon = 0.51 , di/dt = 6900 A/s | 14.1 - 27.7 | mJ |
| Turn-off energy loss per pulse | Eoff | IC = 450 A, VCC = 600 V, L = 25 nH, VGE = 15 V, RGoff = 1.5 , dv/dt = 3100 V/s | 36.9 - 72.2 | mJ |
| SC data | ISC | VGE 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP 8 s, Tvj=150 C | 1700 | A |
| Thermal resistance, junction to case | RthJC | per IGBT | 0.0809 | K/W |
| Thermal resistance, case to heat sink | RthCH | per IGBT, grease = 1 W/(mK) | 0.0372 | K/W |
| Temperature under switching conditions | Tvj op | -40 - 175 | C | |
| Diode, D1 / D2 | ||||
| Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continuous DC forward current | IF | 450 | A | |
| Repetitive peak forward current | IFRM | tP = 1 ms | 900 | A |
| I2t - value | I2t | tP = 10 ms, VR = 0 V | 14400 - 10400 | As |
| Forward voltage | VF | IF = 450 A, VGE = 0 V | 1.80 - 2.10 | V |
| Peak reverse recovery current | IRM | VCC = 600 V, IF = 450 A, VGE = -15 V, -diF/dt = 6900 A/s | 377 - 538 | A |
| Recovered charge | Qr | VCC = 600 V, IF = 450 A, VGE = -15 V, -diF/dt = 6900 A/s | 39.2 - 87.2 | C |
| Reverse recovery energy | Erec | VCC = 600 V, IF = 450 A, VGE = -15 V, -diF/dt = 6900 A/s | 18 - 41.9 | mJ |
| Thermal resistance, junction to case | RthJC | per diode | 0.134 | K/W |
| Thermal resistance, case to heat sink | RthCH | per diode, grease = 1 W/(mK) | 0.0520 | K/W |
| Temperature under switching conditions | Tvj op | -40 - 175 | C | |
| Package & Mechanical Features | ||||
| Isolation test voltage | VISOL | RMS, f = 50 Hz, t = 60 s | 4.0 | kV |
| Material of module baseplate | Cu | |||
| Creepage distance | dCreep | terminal to heatsink | 29.0 | mm |
| Clearance | dClear | terminal to heatsink | 23.0 | mm |
| Comparative tracking index | CTI | > 400 | ||
| Weight | G | 340 | g | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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