| Pd - Power Dissipation | 394W |
| Td(off) | 410ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| Reverse Transfer Capacitance (Cres) | 60pF |
| Input Capacitance(Cies) | 2.36nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA |
| Gate Charge(Qg) | 305nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 70pF |
| Switching Energy(Eoff) | 2mJ |
| Description | 394W 1.35kV TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IHW40N135R5 |
| Package | TO-247-3 |
| Model Number | IHW40N135R5 |
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Product Specification
| Pd - Power Dissipation | 394W | Td(off) | 410ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV | Reverse Transfer Capacitance (Cres) | 60pF |
| Input Capacitance(Cies) | 2.36nF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA |
| Gate Charge(Qg) | 305nC@15V | Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 120A | Output Capacitance(Coes) | 70pF |
| Switching Energy(Eoff) | 2mJ | Description | 394W 1.35kV TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IHW40N135R5 | Package | TO-247-3 |
| Model Number | IHW40N135R5 |
The IHW40N135R5 is a Resonant Switching Series Reverse Conducting IGBT with a monolithic body diode, designed for soft commutation. It features TRENCHSTOP technology for excellent parameter distribution, high ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching. This IGBT also offers low EMI and is qualified according to JESD-022 for target applications. It is Pb-free, RoHS compliant, and halogen-free.
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
|---|---|---|---|---|---|---|
| IHW40N135R5 | 1350V | 40A | 1.65V | 175C | H40PR5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.50mA | 1350 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 40.0A, Tvj = 25C | 1.95 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 1.00mA, VCE = VGE | 5.1 - 6.4 | V |
| Zero gate voltage collector current | ICES | VCE = 1350V, VGE = 0V, Tvj = 25C | 850 | µA |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 40.0A | 30.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 2360 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 70 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 60 | pF |
| Gate charge | QG | VCC = 1080V, IC = 40.0A, VGE = 15V | 305.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 410 | ns |
| Fall time | tf | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 90 | ns |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 2.00 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.30 | mJ |
| Turn-off delay time | td(off) | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 480 | ns |
| Fall time | tf | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 220 | ns |
| Turn-off energy | Eoff | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 3.70 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.85 | mJ |
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| IGBT thermal resistance, junction - case | Rth(j-c) | - | 0.38 | K/W |
| Diode thermal resistance, junction - case | Rth(j-c) | - | 0.38 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | - | 40 | K/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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