Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 120ns |
| Pd - Power Dissipation | 53W |
| Td(on) | 21ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 13pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1mA |
| Gate Charge(Qg) | 21nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 460uJ |
| Turn-On Energy (Eon) | 370uJ |
| Input Capacitance(Cies) | 1.7nF |
| Pulsed Current- Forward(Ifm) | 80A |
| Output Capacitance(Coes) | 72pF |
| Description | 53W 650V TO-220F Single IGBTs RoHS |
| Mfr. Part # | JNG20T65FJS1 |
| Package | TO-220F |
| Model Number | JNG20T65FJS1 |
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Product Specification
| Td(off) | 120ns | Pd - Power Dissipation | 53W |
| Td(on) | 21ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 13pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1mA |
| Gate Charge(Qg) | 21nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 62ns | Switching Energy(Eoff) | 460uJ |
| Turn-On Energy (Eon) | 370uJ | Input Capacitance(Cies) | 1.7nF |
| Pulsed Current- Forward(Ifm) | 80A | Output Capacitance(Coes) | 72pF |
| Description | 53W 650V TO-220F Single IGBTs RoHS | Mfr. Part # | JNG20T65FJS1 |
| Package | TO-220F | Model Number | JNG20T65FJS1 |
This IGBT offers high ruggedness performance with a 10s short circuit capability, making it ideal for applications requiring high efficiency in motor control and excellent current sharing in parallel operation. It is designed for use in home appliances, motor drives, and general inverter systems.
| Parameter | Value | Units | Conditions |
|---|---|---|---|
| Collector-Emitter Voltage (VCES) | 650 | V | - |
| Gate-Emitter Voltage (VGES) | +20 | V | - |
| Continuous Collector Current (IC) @ TC=25 | 40 | A | - |
| Continuous Collector Current (IC) @ TC=100 | 20 | A | - |
| Pulsed Collector Current (ICM) | 80 | A | Note 1 |
| Diode Continuous Forward Current (IF) @ TC=100 | 20 | A | - |
| Diode Maximum Forward Current (IFM) | 80 | A | Note 1 |
| Short Circuit Withstand Time (tsc) | 10 | s | - |
| Maximum Power Dissipation (PD) @ TC=25 | 53 | W | - |
| Maximum Power Dissipation (PD) @ TC=100 | 26 | W | - |
| Operating Junction Temperature Range (TJ) | -40 to +175 | - | |
| Storage Temperature Range (TSTG) | -55 to +150 | - | |
| Thermal Resistance, Junction to case (Rth j-c) for IGBT | 2.8 | / W | - |
| Thermal Resistance, Junction to case (Rth j-c) for Diode | 4.1 | / W | - |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 50 | / W | - |
| Collector-Emitter Breakdown Voltage (BVCES) | 650 | V | VGE= 0V, IC= 250uA |
| Collector-Emitter Leakage Current (ICES) | 50 | uA | VCE= 650V, VGE= 0V |
| Gate Leakage Current, Forward (IGES) | 100 | nA | VGE=20V, VCE= 0V |
| Gate Threshold Voltage (VGE(th)) | 5.2 - 6.2 | V | VGE= VCE, IC=1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.6 | V | VGE=15V, IC= 20A |
| Total Gate Charge (Qg) | 21 | nC | VCC=520V, VGE=15V, IC=20A |
| Turn-on Delay Time (td(on)) | 21 | ns | VCC=400V, VGE=15V, IC=20A, RG=10, Inductive Load, TC=25 |
| Turn-on Rise Time (tr) | 23 | ns | - |
| Turn-off Delay Time (td(off)) | 120 | ns | - |
| Turn-off Fall Time (tf) | 63 | ns | - |
| Turn-on Switching Loss (Eon) | 0.37 | mJ | - |
| Turn-off Switching Loss (Eoff) | 0.46 | mJ | - |
| Total Switching Loss (Ets) | 0.83 | mJ | - |
| Input Capacitance (Cies) | 1700 | pF | VCE=30V, VGE=0V, f = 1MHz |
| Output Capacitance (Coes) | 72 | pF | - |
| Reverse Transfer Capacitance (Cres) | 13 | pF | - |
| Diode Forward Voltage (VF) | 1.5 | V | IF=20A |
| Diode Reverse Recovery Time (trr) | 62 | ns | VCE = 400V, IF = 20A, dif/dt = 500A/us |
| Diode peak Reverse Recovery Current (irr) | 12 | A | - |
| Diode Reverse Recovery Charge (Qrr) | 472 | nC | - |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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