Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 190W |
| Td(off) | 560ns |
| Td(on) | 50ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 82pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 155nC@15V |
| Output Capacitance(Coes) | 96pF |
| Switching Energy(Eoff) | 2.2mJ |
| Turn-On Energy (Eon) | 2mJ |
| Description | 190W 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IGW25T120 |
| Package | TO-247-3 |
| Model Number | IGW25T120 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 190W | Td(off) | 560ns |
| Td(on) | 50ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 82pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 155nC@15V | Output Capacitance(Coes) | 96pF |
| Switching Energy(Eoff) | 2.2mJ | Turn-On Energy (Eon) | 2mJ |
| Description | 190W 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS | Mfr. Part # | IGW25T120 |
| Package | TO-247-3 | Model Number | IGW25T120 |
The IGW25T120 is a Low Loss IGBT featuring TrenchStop and Fieldstop technology, designed for high-performance applications. It offers a short circuit withstand time of 10s and is ideal for frequency converters and uninterrupted power supplies. The TrenchStop and Fieldstop technology ensures very tight parameter distribution, high ruggedness, and stable temperature behavior. Its NPT technology facilitates easy parallel switching due to a positive temperature coefficient in VCE(sat), along with low EMI and low gate charge. This product is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.
| Type | VCE | IC (TC=25C) | VCE(sat) (Tj=25C) | Tj,max | Marking | Package |
| IGW25T120 | 1200V | 50A | 1.7V | 150C | G25T120 | PG-TO-247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage | VC E | 1200 | V | |
| DC collector current | I C | TC = 25C | 50 | A |
| DC collector current | I C | TC = 100C | 25 | A |
| Pulsed collector current, tp limited by Tjmax | I C p u l s | 75 | A | |
| Gate-emitter voltage | V G E | 20 | V | |
| Short circuit withstand time | t SC | VGE = 15V, VCC 1200V, Tj 150C | 10 | s |
| Power dissipation | P to t | TC = 25C | 190 | W |
| Operating junction temperature | T j | -40...+150 | C | |
| Storage temperature | T st g | -55...+150 | C | |
| Soldering temperature, 1.6mm from case for 10s | 260 | C | ||
| IGBT thermal resistance, junction case | R t h JC | 0.65 | K/W | |
| IGBT thermal resistance, junction ambient | R t h JA | 40 | K/W | |
| Collector-emitter breakdown voltage | V (BR )C ES | V G E=0V, I C=500A | 1200 | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=25A, T j=25C | 1.7 | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=25A, T j=125C | 2.0 | V |
| Collector-emitter saturation voltage | VC E(sa t ) | V G E = 15V, I C=25A, T j=150C | 2.2 | V |
| Gate-emitter threshold voltage | V G E( th ) | I C=1mA, VC E=VG E | 5.0...6.5 | V |
| Zero gate voltage collector current | I C ES | VC E=1200V, V G E=0V, T j=25C | 0.25 | mA |
| Zero gate voltage collector current | I C ES | VC E=1200V, V G E=0V, T j=150C | 2.5 | mA |
| Gate-emitter leakage current | I G E S | VC E=0V,V GE=20V | 600 | nA |
| Transconductance | g f s | VC E=20V, I C=25A | 16 | S |
| Integrated gate resistor | R G i n t | 8 | ||
| Input capacitance | C i s s | 1860 | pF | |
| Output capacitance | C o s s | 96 | pF | |
| Reverse transfer capacitance | C r s s | VC E=25V, V G E=0V, f=1MHz | 82 | pF |
| Gate charge | Q Ga te | VC C=960V, I C=25A, V G E=15V | 155 | nC |
| Internal emitter inductance | L E | measured 5mm from case | 13 | nH |
| Short circuit collector current | I C (SC ) | V G E=15V,t SC10s, VC C = 600V, T j = 25C | 150 | A |
| Parameter | Symbol | Conditions | Tj=25C (typ.) | Tj=150C (typ.) | Unit |
| Turn-on delay time | t d (o n ) | Inductive Load | 50 | 50 | ns |
| Rise time | t r | Inductive Load | 30 | 32 | ns |
| Turn-off delay time | t d (o f f ) | Inductive Load | 560 | 660 | ns |
| Fall time | t f | Inductive Load | 70 | 130 | ns |
| Turn-on energy | Eo n | Inductive Load | 2.0 | 3.0 | mJ |
| Turn-off energy | Eo ff | Inductive Load | 2.2 | 4.0 | mJ |
| Total switching energy | E t s | Inductive Load | 4.2 | 7.0 | mJ |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!