Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 108W |
| Td(off) | 83ns |
| Td(on) | 37ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 45pF |
| Input Capacitance(Cies) | 2.46nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Operating Temperature | -40℃~+155℃ |
| Pulsed Current- Forward(Ifm) | 45A |
| Output Capacitance(Coes) | 95pF |
| Reverse Recovery Time(trr) | 62ns |
| Switching Energy(Eoff) | 480uJ |
| Turn-On Energy (Eon) | 1.24mJ |
| Description | 108W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG15T120HS |
| Package | TO-247 |
| Model Number | JNG15T120HS |
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Product Specification
| Pd - Power Dissipation | 108W | Td(off) | 83ns |
| Td(on) | 37ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 45pF | Input Capacitance(Cies) | 2.46nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | Operating Temperature | -40℃~+155℃ |
| Pulsed Current- Forward(Ifm) | 45A | Output Capacitance(Coes) | 95pF |
| Reverse Recovery Time(trr) | 62ns | Switching Energy(Eoff) | 480uJ |
| Turn-On Energy (Eon) | 1.24mJ | Description | 108W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG15T120HS | Package | TO-247 |
| Model Number | JNG15T120HS |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. The JNG15T120HS features 1200V, 15A, high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.
| Symbol | Parameter | Value | Units | Notes |
| VCES | Collector-Emitter Voltage | 1200 | V | |
| VGES | Gate-Emitter Voltage | + 30 | V | |
| IC | Continuous Collector Current | 30 | A | ( TC=25 ) |
| 15 | A | ( TC=100) | ||
| ICM | Pulsed Collector Current | 45 | A | (Note 1) |
| IF | Diode Continuous Forward Current | 15 | A | ( TC=100 ) |
| IFM | Diode Maximum Forward Current | 45 | A | (Note 1) |
| tsc | Short Circuit Withstand Time | 10 | us | |
| PD | Maximum Power Dissipation | 108 | W | ( TC=25 ) |
| 43 | W | ( TC=100) | ||
| TJ | Operating Junction Temperature Range | -40 to +155 | ||
| TSTG | Storage Temperature Range | -55 to +155 | ||
| Rth j-c | Thermal Resistance, Junction to case | 1.15 | / W | for IGBT |
| 1.5 | / W | for Diode | ||
| Rth j-a | Thermal Resistance, Junction to Ambient | 40 | / W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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