Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 415W |
| Td(off) | 470ns |
| Td(on) | 85ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 90pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Operating Temperature | -50℃~+150℃ |
| Gate Charge(Qg) | 380nC@15V |
| Reverse Recovery Time(trr) | 200ns |
| Switching Energy(Eoff) | 3.6mJ |
| Turn-On Energy (Eon) | 2.8mJ |
| Input Capacitance(Cies) | 4.5nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 190pF |
| Description | 415W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG40T120HP |
| Package | TO-247 |
| Model Number | JNG40T120HP |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 415W | Td(off) | 470ns |
| Td(on) | 85ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 90pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Operating Temperature | -50℃~+150℃ | Gate Charge(Qg) | 380nC@15V |
| Reverse Recovery Time(trr) | 200ns | Switching Energy(Eoff) | 3.6mJ |
| Turn-On Energy (Eon) | 2.8mJ | Input Capacitance(Cies) | 4.5nF |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 190pF |
| Description | 415W 1.2kV TO-247 Single IGBTs RoHS | Mfr. Part # | JNG40T120HP |
| Package | TO-247 | Model Number | JNG40T120HP |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as induction heating, UPS, AC & DC motor controls, and general-purpose inverters. The JNG40T120HP features 1200V, 40A capability with a typical VCE(sat) of 1.85V, high-speed switching, and soft current turn-off waveforms, contributing to higher system efficiency.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | 30 | V | |||
| Continuous Collector Current | IC | TC=25 | 80 | A | ||
| Continuous Collector Current | IC | TC=100 | 40 | A | ||
| Pulsed Collector Current | ICM | Note 1 | 160 | A | ||
| Diode Continuous Forward Current | IF | TC=100 | 40 | A | ||
| Diode Maximum Forward Current | IFM | Note 1 | 160 | A | ||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation | PD | TC=25 | 415 | W | ||
| Maximum Power Dissipation | PD | TC=100 | 165 | W | ||
| Operating Junction Temperature Range | TJ | -50 | 150 | |||
| Storage Temperature Range | TSTG | -50 | 150 | |||
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | 0.29 | / W | |||
| Thermal Resistance, Junction to case (Diode) | Rth j-c | 0.65 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 1200V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=30V, VCE= 0V | - | - | 100 | nA |
| Gate Leakage Current, Reverse | IGES | VGE= -30V, VCE= 0V | - | - | -100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 4.5 | - | 6.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 40A | - | 1.85 | 2.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 40A, Tc = 125 | - | 2.05 | - | V |
| Turn-on Delay Time | td(on) | VCC=600V, VGE=15V, IC=40A, RG=15, Inductive Load, TC=25 | - | 85 | - | ns |
| Turn-on Rise Time | tr | - | 50 | - | ns | |
| Turn-off Delay Time | td(off) | - | 470 | - | ns | |
| Turn-off Fall Time | tf | - | 210 | - | ns | |
| Turn-on Switching Loss | Eon | - | 2.8 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 3.6 | - | mJ | |
| Total Switching Loss | Ets | - | 6.4 | - | mJ | |
| Input Capacitance | Cies | VCE=30V, VGE=0V, f = 1MHz | - | 4500 | - | pF |
| Output Capacitance | Coes | - | 190 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 90 | - | pF | |
| Total Gate Charge | Qg | VCC =600V, VGE =15V, IC = 40A | - | 380 | - | nC |
| Gate-Emitter Charge | Qge | - | 25 | - | nC | |
| Gate-Collector Charge | Qgc | - | 215 | - | nC | |
| Diode Forward Voltage | VF | IF= 40A | - | 2.0 | 2.8 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V, IF= 40A, dIF/dt = 200A/us | - | 200 | - | ns |
| Diode peak Reverse Recovery Current | Irr | - | 16 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 1800 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!