Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 165W |
| Td(off) | - |
| Td(on) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 365V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@3.7V,10A |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
| Description | 165W 365V D2PAK Single IGBTs RoHS |
| Mfr. Part # | NGB8207ABNT4G |
| Package | D2PAK |
| Model Number | NGB8207ABNT4G |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 165W | Td(off) | - |
| Td(on) | - | Collector-Emitter Breakdown Voltage (Vces) | 365V |
| IGBT Type | - | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@3.7V,10A |
| Operating Temperature | -55℃~+175℃@(Tj) | Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - | Description | 165W 365V D2PAK Single IGBTs RoHS |
| Mfr. Part # | NGB8207ABNT4G | Package | D2PAK |
| Model Number | NGB8207ABNT4G |
The NGB8207ABN is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for ignition and high voltage/high current switching applications. It features integrated ESD and over-voltage clamped protection, making it ideal for Coil-on-Plug and Driver-on-Coil applications. Its low threshold voltage allows for interfacing power loads to logic or microprocessor devices, while its low saturation voltage and high pulsed current capability ensure efficient operation. This Pb-free device offers gate-emitter ESD protection and temperature-compensated gate-collector voltage clamp limits to minimize stress on the load.
| Rating Symbol | Value | Unit | Description |
| VCES | 365 | V | CollectorEmitter Voltage |
| VGE | ±15 | V | GateEmitter Voltage |
| IC (Continuous @ TC = 25°C) | 20 | ADC | Collector CurrentContinuous |
| IC (Pulsed) | 50 | AAC | Collector CurrentPulsed |
| IG (Continuous) | 1.0 | mA | Continuous Gate Current |
| IG (Transient) | 20 | mA | Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) |
| ESD (ChargedDevice Model) | 2.0 | kV | ESD Protection |
| ESD (Human Body Model) | 8.0 | kV | ESD Protection |
| ESD (Machine Model) | 500 | V | ESD Protection |
| PD (@ TC = 25°C) | 165 | Watts | Total Power Dissipation |
| TJ, Tstg | −55 to +175 | °C | Operating and Storage Temperature Range |
| RθJC | 0.9 | °C/W | Thermal Resistance, Junction to Case |
| RθJA | 50 | °C/W | Thermal Resistance, Junction to Ambient |
| TL | 275 | °C | Maximum Lead Temperature for Soldering Purposes |
| EAS | 500 | mJ | Single Pulse CollectortoEmitter Avalanche Energy |
| EAS(R) | 2000 | mJ | Reverse Avalanche Energy |
| VCE(on) (≤ 1.5 V @ IC = 10A, VGE ≥ 4.5 V) | - | V | OnState Voltage |
| Characteristic | Symbol | Test Conditions | Temperature | Min | Typ | Max | Unit |
| CollectorEmitter Clamp Voltage | BVCES | IC = 2.0 mA | TJ = −40°C to 175°C | 325 | 350 | 375 | V |
| CollectorEmitter Clamp Voltage | BVCES | IC = 10 mA | TJ = −40°C to 175°C | 340 | 365 | 390 | V |
| Zero Gate Voltage Collector Current | ICES | VGE = 0 V, VCE = 24V | TJ = 25°C | - | 0.1 | 2.0 | µA |
| Zero Gate Voltage Collector Current | ICES | VCE = 250V | TJ = 25°C | - | 1.0 | 5 | µA |
| Zero Gate Voltage Collector Current | ICES | VCE = 250V | TJ = 175°C | - | 70 | 85 | µA |
| Reverse CollectorEmitter Clamp Voltage | BVCES (R) | IC = −75 mA | TJ = 25°C | 30 | 33 | 39 | V |
| Reverse CollectorEmitter Clamp Voltage | BVCES (R) | IC = −75 mA | TJ = 175°C | 30 | 36 | 42 | V |
| Reverse CollectorEmitter Leakage Current | ICES(R) | VCE = −24 V | TJ = 25°C | 0.10 | 0.25 | 0.85 | mA |
| Reverse CollectorEmitter Leakage Current | ICES(R) | VCE = −24 V | TJ = 175°C | 20 | 25 | 40 | mA |
| GateEmitter Clamp Voltage | BVGES | IG = ± 5.0 mA | TJ = −40°C to 175°C | 12 | 13 | 14.5 | V |
| GateEmitter Leakage Current | IGES | VGE = ± 10.0 V | TJ = −40°C to 175°C | 500 | 700 | 1000 | µA |
| Gate Resistor | RG | - | TJ = −40°C to 175°C | - | 70 | - | Ω |
| Gate Emitter Resistor | RGE | - | TJ = −40°C to 175°C | 14.25 | 16 | 25 | kΩ |
| Gate Threshold Voltage | VGE (th) | IC = 1.0 mA, VGE = VCE | TJ = 25°C | 1.2 | 1.5 | 2.0 | V |
| Gate Threshold Voltage | VGE (th) | IC = 1.0 mA, VGE = VCE | TJ = 175°C | 0.6 | 0.8 | 1.2 | V |
| CollectortoEmitter OnVoltage | VGE (on) | IC = 6.0 mA, VGE = 4.0 V | TJ = 25°C | 1.0 | 1.3 | 1.6 | V |
| CollectortoEmitter OnVoltage | VGE (on) | IC = 10 mA, VGE = 4.5 V | TJ = 25°C | - | 0.62 | 1.0 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 8.0 A, VGE = 4.0 V | TJ = 25°C | 1.1 | 1.5 | 1.7 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 10 A, VGE = 3.7 V | TJ = 25°C | 1.2 | 1.6 | 1.9 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 10 A, VGE = 4.0 V | TJ = 25°C | 1.1 | 1.5 | 1.85 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 10 A, VGE = 4.5 V | TJ = 25°C | 1.2 | 1.5 | 1.8 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 15 A, VGE = 4.0 V | TJ = 25°C | 1.45 | 1.85 | 2.15 | V |
| CollectortoEmitter OnVoltage | VCE (on) | IC = 20 A, VGE = 4.0V | TJ = 25°C | 1.6 | 2.1 | 2.6 | V |
| Forward Transconductance | gfs | VCE = 5.0 V, IC = 6.0 A | TJ = 25°C | - | 15.8 | - | Mhos |
| Characteristic | Symbol | Test Conditions | Temperature | Min | Typ | Max | Unit |
| Input Capacitance | CISS | VCE = 25 V f = 10 kHz | TJ = 25°C | 750 | 810 | 900 | pF |
| Output Capacitance | COSS | VCE = 25 V f = 10 kHz | TJ = 25°C | 75 | 90 | 105 | pF |
| Transfer Capacitance | CRSS | VCE = 25 V f = 10 kHz | TJ = 25°C | 4 | 7 | 12 | pF |
| TurnOn Delay Time (Resistive) Low Voltage | td (on) | VCE = 14 V RL = 1.0 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 0.5 | 0.55 | 0.7 | µSec |
| Rise Time (Resistive) Low Voltage | tr | VCE = 14 V RL = 1.0 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 2.0 | 2.32 | 2.7 | µSec |
| TurnOff Delay Time (Resistive) Low Voltage | td (off) | VCE = 14 V RL = 1.0 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 2.0 | 2.5 | 3.0 | µSec |
| Fall Time (Resistive) Low Voltage | tf | VCE = 14 V RL = 1.0 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 8.0 | 10 | 13 | µSec |
| TurnOn Delay Time (Resistive) High Voltage | td (on) | VCE = 300 V RL = 46 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 0.5 | 0.65 | 0.75 | µSec |
| Rise Time (Resistive) High Voltage | tr | VCE = 300 V RL = 46 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 0.7 | 1.8 | 2.0 | µSec |
| TurnOff Delay Time (Resistive) High Voltage | td (off) | VCE = 300 V RL = 46 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 4.0 | 4.7 | 6.0 | µSec |
| Fall Time (Resistive) High Voltage | tf | VCE = 300 V RL = 46 Ω VGE = 5.0 V RG = 1000 Ω | TJ = 25°C | 6.0 | 10 | 15 | µSec |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!