Hefei Purple Horn E-Commerce Co., Ltd.
| Description | DPAK Single IGBTs RoHS |
| Mfr. Part # | NGD18N40ACLBT4G |
| Package | DPAK |
| Model Number | NGD18N40ACLBT4G |
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Product Specification
| Description | DPAK Single IGBTs RoHS | Mfr. Part # | NGD18N40ACLBT4G |
| Package | DPAK | Model Number | NGD18N40ACLBT4G |
The NGD18N40ACLB is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for inductive coil driver applications. It features monolithic circuitry with integrated ESD and Over-Voltage clamped protection, making it ideal for ignition, direct fuel injection, and other high-voltage, high-current switching requirements. The DPAK package offers a smaller footprint for increased board space.
| Rating | Symbol | Value | Unit | Conditions |
| CollectorEmitter Voltage | VCES | 430 | VDC | |
| VCER | 430 | VDC | ||
| VCE(on) | ≤ 2.0 | V | @ IC = 10 A, VGE ≥ 4.5 V | |
| Collector CurrentContinuous | IC | 15 | ADC | @ TC = 25°C |
| 50 | AAC | Pulsed | ||
| GateEmitter Voltage | VGE | 18 | VDC | |
| Total Power Dissipation | PD | 115 | W | @ TC = 25°C |
| Derate above 25°C | 0.77 | W/°C | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C | |
| Thermal Resistance, Junction to Case | RθJC | 1.3 | °C/W | |
| Thermal Resistance, Junction to Ambient (DPAK, Note 1) | RθJA | 95 | °C/W | |
| Maximum Lead Temperature for Soldering | TL | 275 | °C | 1/8 from case for 5 seconds |
| Single Pulse CollectortoEmitter Avalanche Energy | EAS | 400 | mJ | VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C |
| Reverse Avalanche Energy | EAS(R) | 2000 | mJ | VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C |
| Short Circuit Withstand Time 1 | tsc1 | 750 | µs | (See Figure 17, 3 Pulses with 10 ms Period) |
| Short Circuit Withstand Time 2 | tsc2 | 5.0 | ms | (See Figure 18, 3 Pulses with 10 ms Period) |
| CollectorEmitter Clamp Voltage | BVCES | 380-420 | VDC | IC = 2.0 mA, TJ = −40°C to 150°C |
| Zero Gate Voltage Collector Current | ICES | -2.0 to 20 | µADC | VCE = 350 V, VGE = 0 V, TJ = 25°C |
| Reverse CollectorEmitter Leakage Current | IECS | -0.7 to 1.0 | mA | VCE = −24 V, TJ = 25°C |
| GateEmitter Clamp Voltage | BVGES | 11-15 | VDC | IG = 5.0 mA, TJ = −40°C to 150°C |
| GateEmitter Leakage Current | IGES | 384-700 | µADC | VGE = 10 V, TJ = −40°C to 150°C |
| Gate Threshold Voltage | VGE(th) | 1.1-1.9 | VDC | IC = 1.0 mA, VGE = VCE, TJ = 25°C |
| CollectortoEmitter OnVoltage | VCE(on) | 1.0-1.6 | VDC | IC = 6.0 A, VGE = 4.0 V, TJ = 25°C |
| Forward Transconductance | gfs | 8.0-25 | Mhos | VCE = 5.0 V, IC = 6.0 A, TJ = −40°C to 150°C |
| Input Capacitance | CISS | 400-1000 | pF | VCC = 25 V, VGE = 0 V, f = 1.0 MHz, TJ = −40°C to 150°C |
| Output Capacitance | COSS | 50-100 | pF | |
| Transfer Capacitance | CRSS | 4.0-10 | pF | |
| TurnOff Delay Time (Resistive) | td(off) | 4.0-10 | µS | VCC = 300 V, IC = 6.5 A, RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C |
| Fall Time (Resistive) | tf | 9.0-15 | µS | VCC = 300 V, IC = 6.5 A, RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C |
| TurnOn Delay Time | td(on) | 0.7-4.0 | µS | VCC = 10 V, IC = 6.5 A, RG = 1.0 kΩ, RL = 1.5 Ω, TJ = 25°C |
| Rise Time | tr | 4.5-7.0 | µS | VCC = 10 V, IC = 6.5 A, RG = 1.0 kΩ, RL = 1.5 Ω, TJ = 25°C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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