Hefei Purple Horn E-Commerce Co., Ltd.
| Description | TO-247 Single IGBTs RoHS |
| Mfr. Part # | KGM40N120AI |
| Package | TO-247 |
| Model Number | KGM40N120AI |
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Product Specification
| Description | TO-247 Single IGBTs RoHS | Mfr. Part # | KGM40N120AI |
| Package | TO-247 | Model Number | KGM40N120AI |
This is a 40A, 1200V Silicon Power IGBT from KIA SEMICONDUCTORS. It features low VCE(sat) of 1.91V (typ.), fast switching, high ruggedness, and short-circuit rating. Ideal for applications such as Solar Inverters, Uninterrupted Power Supply, Industrial Inductive Heating, and Energy Storage.
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Ordering Information | |||
| Part Number | KGM40N120AI | ||
| Package | TO-247 | ||
| Brand | KIA | ||
| Maximum Ratings | |||
| Collector-emitter voltage | VCE | 1200 | V |
| DC collector current, TC=25C | IC | 80 | A |
| DC collector current, TC=100C | IC | 40 | A |
| Pulsed collector current | ICpuls | 160 | A |
| Diode forward current, TC=25C | IF | 40 | A |
| Diode forward current, TC=100C | IF | 40 | A |
| Diode pulsed current | IFpuls | 80 | A |
| Gate-emitter voltage | VGE | ±20 | V |
| Transient Gate-emitter voltage | VGE | ±30 | V |
| Power dissipation, TC=25C | Ptot | 575 | W |
| Power dissipation, TC=100C | Ptot | 290 | W |
| Operating junction temperature | Tvj(0P) | -40 to +175 | C |
| Storage temperature | Tstg | -40 to +150 | C |
| Soldering temperature | 260 | C | |
| Thermal characteristics | |||
| IGBT Thermal Resistance, Junction-Case | R(J-C) | 0.26 | C/W |
| Diode Thermal Resistance, Junction-Case | R(J-C) | 0.45 | C/W |
| Electrical characteristics (TVj=25C, unless otherwise specified) | |||
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | V |
| Collector-emitter saturation voltage, VGE=15V, IC=60A, Tvj=25C | VCEsat | 1.91 | V |
| Collector-emitter saturation voltage, VGE=15V, IC=60A, Tvj=150C | VCEsat | 2.36 | V |
| Diode forward voltage, IF=60A, Tvj=25C | VF | 2.0 | V |
| Diode forward voltage, IF=60A, Tvj=150C | VF | 1.74 | V |
| Gate-emitter threshold voltage | VGE(th) | 5.1 | V |
| Zero gate voltage collector current, VCE=650V, Tvj=25C | ICES | 250 | uA |
| Gate-emitter leakage current, VGE=±20V | IGES | 600 | nA |
| Transconductance, VCE=20V, IC=60A | gfs | 27 | S |
| Dynamic Characteristic (TVj=25C, unless otherwise specified) | |||
| Input capacitance | Cies | 2500 | pF |
| Output capacitance | Coes | 200 | pF |
| Reverse transfer capacitance | Cres | 100 | pF |
| Gate charge | QG | 120 | nC |
| IGBT Characteristic, at Tvj=25C | |||
| Turn-on delay time | td(on) | 15 | nS |
| Rise time | tr | 70 | nS |
| Turn-off delay time | td(off) | 145 | nS |
| Fall time | tf | 82 | nS |
| Turn-on energy | Eon | 3.48 | mJ |
| Turn-off energy | Eoff | 1.47 | mJ |
| Diode Characteristic | |||
| Diode reverse recovery time | trr | 450 | nS |
| Diode reverse recovery charge | Qrr | 2.57 | μC |
| Diode peak reverse recovery current | Irrm | 13 | A |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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