Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 333W |
| Td(off) | 587ns |
| Td(on) | 108ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@1.5mA |
| Gate Charge(Qg) | 266nC@40A,15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 129ns |
| Switching Energy(Eoff) | 1.23mJ |
| Turn-On Energy (Eon) | 1.36mJ |
| Description | IGBT 650V 80A 333W Through Hole TO-247 |
| Mfr. Part # | IKW40N65H2-KTP |
| Package | TO-247 |
| Model Number | IKW40N65H2-KTP |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 333W | Td(off) | 587ns |
| Td(on) | 108ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@1.5mA | Gate Charge(Qg) | 266nC@40A,15V |
| Operating Temperature | -40℃~+175℃ | Reverse Recovery Time(trr) | 129ns |
| Switching Energy(Eoff) | 1.23mJ | Turn-On Energy (Eon) | 1.36mJ |
| Description | IGBT 650V 80A 333W Through Hole TO-247 | Mfr. Part # | IKW40N65H2-KTP |
| Package | TO-247 | Model Number | IKW40N65H2-KTP |
The 40N65H2 is a 650V, 40A IGBT discrete utilizing CoolWatt@II Trench-FS technology, offering high-speed soft switching. It features a low Vcesat, high junction temperature capability, and robust construction. This IGBT is ideal for applications requiring high switching frequencies, including Power, PV, Industrial welding, and PFC systems. It includes an integrated anti-parallel fast recovery diode.
| Symbol | Parameter | Condition | Value | Unit | |
| Maximum Rated Values | |||||
| VCES | Collector-emitter voltage | Tvj=25 | 650 | V | |
| IC | DC collector current | TC = 25 | 80 | A | |
| IC | DC collector current | TC =100 | 40 | A | |
| ICpuls | Pulse collector current | Tvj150 | 120 | A | |
| VRRM | Repetitive peak reverse voltage | Tvj=25 | 650 | V | |
| IF | Diode continuous forward current | TC = 25 | 80 | A | |
| IF | Diode continuous forward current | TC = 100 | 40 | A | |
| IFpuls | Diode pulse current | Tvj150 | 120 | A | |
| VGE | Gate-emitter voltage | Tvj=25 | 20 | V | |
| VGE | Gate-emitter voltage | Transienttp10uS,D0.01 | 30 | V | |
| Ptot | Power dissipation | TC = 25 | 333 | W | |
| Tvj | Operating junction temperature | -40~+175 | |||
| Tstg | Storage temperature | -50~ +150 | |||
| M | Mounting torque | M3 | 0.6 | Nm | |
| Thermal Characteristic | |||||
| RthJC-IGBT | IGBT thermal resistance junction-case | 0.45 | K/W | ||
| RthJC-FRD | FRD thermal resistance junction-case | 1.30 | K/W | ||
| RthJA | Thermal resistance junction-ambient | 40 | K/W | ||
| Electrical Characteristic | |||||
| V(BR)CES | Collector-emitter breakdown voltage | VGE = 0V, IC=0.25mA,Tvj=25 | 650 | V | |
| VCE(sat) | Collector-emitter saturation voltage | VGE=15V, IC=40A, Tvj=25 | 1.45 | V | |
| VCE(sat) | Collector-emitter saturation voltage | VGE=15V, IC=40A, Tvj=150 | 1.80 | V | |
| VGE(th) | Gate-emitter threshold voltage | VGE= VCE,IC=1.5mA,Tvj=25 | 5.50 | 6.50 | V |
| VF | Diode forward voltage | VGE= 0V,IF=40A, Tvj=25 | 1.60 | V | |
| VF | Diode forward voltage | VGE= 0V,IF=40A, Tvj=150 | 1.45 | V | |
| IGES | Zero collector voltage gate current | VGE=30V,VCE=0V | 200 | nA | |
| ICES | Zero gate voltage collector current | VCE =650V,VGE=0V, Tvj=25 | 0.25 | mA | |
| ICES | Zero gate voltage collector current | VCE =650V,VGE=0V, Tvj=150 | 0.50 | mA | |
| RGin | Integrated gate resistor | 0 | |||
| Cies | Input capacitance | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 | 6080 | pF | |
| Coes | Output capacitance | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 | 167 | pF | |
| Cres | Reverse transfer capacitance | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 | 97.3 | pF | |
| Qg | Gate charge | VGE=0/15V,Vcc=520V,IC=40A, Tvj=25 | 266 | nC | |
| Qge | Gate-emitter charge | VGE=0/15V,Vcc=520V,IC=40A, Tvj=25 | 39.9 | nC | |
| Qgc | Gate-collector charge | VGE=0/15V,Vcc=520V,IC=40A, Tvj=25 | 125 | nC | |
| VGE(pl) | Gate-emitter plateau voltage | IC =40A,VCE=520V, VGE=0/15V,Tvj=25 | 8.2 | V | |
| Dynamic CharacteristicWith inductive load | |||||
| IGBT Characteristic_25 | |||||
| Td(on) | Turn-on delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 108 | ns | |
| Tr | Rise time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 73.1 | ns | |
| Td(off) | Turn-off delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 587 | ns | |
| tf | Fall time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 37.4 | ns | |
| Eon | Turn-on energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 1.36 | mJ | |
| Eoff | Turn-off energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 1.23 | mJ | |
| Etotal | Total switch energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 2.59 | mJ | |
| IGBT Characteristic_150 | |||||
| Td(on) | Turn-on delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 93.1 | ns | |
| Tr | Rise time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 76.1 | ns | |
| Td(off) | Turn-off delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 649 | ns | |
| tf | Fall time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 36.6 | ns | |
| Eon | Turn-on energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 2.17 | mJ | |
| Eoff | Turn-off energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 1.41 | mJ | |
| Etotal | Total switch energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 3.58 | mJ | |
| Diode Characteristic_25 | |||||
| Erec | Reverse recovery energy | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 264 | uJ | |
| trr | Diode reverse recovery time | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 129 | nS | |
| Qrr | Diode reverse recovery charge | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 945 | nC | |
| Irrm | Diode peak reverse recovery current | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 12.8 | A | |
| dirr/dt | Diode peak rate of fall of reverse Recovery current during trr | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 116 | A/uS | |
| Diode Characteristic_150 | |||||
| Erec | Reverse recovery energy | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 819 | uJ | |
| trr | Diode reverse recovery time | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 282 | nS | |
| Qrr | Diode reverse recovery charge | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 3072 | nC | |
| Irrm | Diode peak reverse recovery current | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 25.6 | A | |
| dirr/dt | Diode peak rate of fall of reverse Recovery current during trr | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 192 | A/uS | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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