Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 96.8ns |
| Pd - Power Dissipation | 56W |
| Td(on) | 23.1ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 7.68pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@250uA |
| Gate Charge(Qg) | 28.8nC@15V |
| Pulsed Current- Forward(Ifm) | 15A |
| Output Capacitance(Coes) | 21.5pF |
| Reverse Recovery Time(trr) | 110ns |
| Switching Energy(Eoff) | 68uJ |
| Turn-On Energy (Eon) | 90uJ |
| Description | 56W 650V FS (Field Stop) TO-252 Single IGBTs RoHS |
| Mfr. Part # | CGU06N65F2SA |
| Package | TO-252 |
| Model Number | CGU06N65F2SA |
View Detail Information
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Product Specification
| Td(off) | 96.8ns | Pd - Power Dissipation | 56W |
| Td(on) | 23.1ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 7.68pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@250uA | Gate Charge(Qg) | 28.8nC@15V |
| Pulsed Current- Forward(Ifm) | 15A | Output Capacitance(Coes) | 21.5pF |
| Reverse Recovery Time(trr) | 110ns | Switching Energy(Eoff) | 68uJ |
| Turn-On Energy (Eon) | 90uJ | Description | 56W 650V FS (Field Stop) TO-252 Single IGBTs RoHS |
| Mfr. Part # | CGU06N65F2SA | Package | TO-252 |
| Model Number | CGU06N65F2SA |
The JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CGU06N65F2SA is a 650V IGBT featuring low Vce(sat), high-speed switching, and low switching loss. It incorporates a fast and soft recovery freewheeling diode, offering high short-circuit ruggedness and good EMI behavior. This device is built with JSCJ's second-generation IGBT technology, utilizing an advanced Trench and FS (Field Stop) structure, making it suitable for parallel applications.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | ±30 | V | |||
| Collector Current | IC | (TC=100) | 6 | A | ||
| Plused Collector Current | ICpluse | tp limited by TJmax | 15 | A | ||
| Turn-off latching current | ILM(1) | 15 | A | |||
| Continuous Diode Forward Current | IF | 12 | A | |||
| Continuous Diode Forward Current | IF | @TC=100 | 6 | A | ||
| Diode Pulsed Current | IFM | Limited by TJmax | 15 | A | ||
| Short circuit withstanding time | tsc(2) | VGE = 15V, VCC ≤ 400V, TJ ≤ 150°C | 5 | µS | ||
| Power Dissipation | PD | @TC=25°C | 56 | W | ||
| Power Dissipation | PD | @TC =100°C | 28 | W | ||
| Junction Temperature Range | TJ | -55 | 175 | °C | ||
| Storage Temperature | TSTG | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Maximum IGBT Junction-to-Case | RθJC | 2.2 | °C/W | |||
| Maximum Diode Junction-to-Case | RθJC | 5.6 | °C/W | |||
| Maximum Junction-to-Ambient | RθJA | 55 | °C/W | |||
| Maximum lead temperature for soldering | TL | 260 | °C | |||
| Electrical Characteristics (TJ=25°C unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | V(BR)CES | VGE=0V,ICE=1mA | 650 | -- | -- | V |
| Zero Gate Voltage Collector Current | ICES | VGE=0V,VCE=650V | -- | -- | 1.0 | µA |
| Gate-Emitter leakage current | IGES | VGE=±20V | -- | -- | ±250 | nA |
| Gate-Emitter leakage current | IGES | VGE=±30V | -- | -- | ±500 | nA |
| Gate-Emitter Threshold Voltage | VGE(th) | IC=250µA ,VCE=VGE | 5.5 | -- | 7.5 | V |
| Diode Forward Voltage | VF | IF=6A,Tc=25°C | -- | 1.69 | -- | V |
| Diode Forward Voltage | VF | IF=6A,Tc=125°C | -- | 1.49 | -- | V |
| Diode Forward Voltage | VF | IF=6A,Tc=150°C | -- | 1.47 | -- | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=6A,VGE=15V,TJ=25°C | -- | 1.68 | -- | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=5A,VGE=15V,TJ=25°C | -- | 1.57 | 2.1 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=5A,VGE=15V,TJ=125°C | -- | 1.7 | -- | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=5A,VGE=15V,TJ=150°C | -- | 1.74 | -- | V |
| Dynamic Parameters | ||||||
| Input Capacitance | Cies | VCE=30V,VGE=0V f=1MHz | -- | 541 | -- | pF |
| Output Capacitance | Coes | -- | 21.5 | -- | pF | |
| Reverse Transfer Capacitance | Cres | -- | 7.68 | -- | pF | |
| Total Gate Charge | Qg | VGE=15V,VCC=400V, IC=5A | -- | 28.8 | -- | nC |
| Gate to Emitter Charge | Qge | -- | 6 | -- | ||
| Gate to Collector Charge | Qgc | -- | 17.8 | -- | ||
| Gate resistance | Rg | VGE=0V, VCC=0V, f=1MHz | -- | 5.4 | -- | Ω |
| Short circuit collector current | IC(SC) | VGE=15V, VCC=400V, tsc≤5µs, TJ≤150°C | -- | 28 | -- | A |
| Switching Parameters | ||||||
| Turn-On Delay Time | td(on) | VCE=400V,IC=5A,Rg=10Ω, VGE=15V, Inductive Load TJ=25°C | -- | 23.1 | -- | ns |
| Current Rise Time | tr | -- | 17.5 | -- | ns | |
| Turn-Off Delay Time | td(off) | -- | 96.8 | -- | ns | |
| Current Fall Time | tf | -- | 84 | -- | ns | |
| Turn-On Switching Energy | Eon | (3) | -- | 0.09 | -- | mJ |
| Turn-Off Switching Energy | Eoff | -- | 0.068 | -- | mJ | |
| Total Switching Energy | Ets | -- | 0.158 | -- | mJ | |
| Diode Switching Parameters | ||||||
| Diode Reverse Recovery Time | trr | IF=5A, VCC=400V, di/dt=200A/uS, TJ=25°C | -- | 110 | -- | ns |
| Diode Reverse Recovery Current | Irrm | -- | 3.5 | -- | A | |
| Diode Reverse Recovery Charge | Qrr | -- | 105 | -- | nC | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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