| Pd - Power Dissipation | 390W |
| Td(off) | 94ns |
| Td(on) | 26ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 30pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 108.8nC@15V |
| Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 870uJ |
| Turn-On Energy (Eon) | 2.69mJ |
| Pulsed Current- Forward(Ifm) | 240A |
| Output Capacitance(Coes) | 256pF |
| Description | 390W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | CGWT80N65F2KAD |
| Package | TO-247 |
| Model Number | CGWT80N65F2KAD |
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Product Specification
| Pd - Power Dissipation | 390W | Td(off) | 94ns |
| Td(on) | 26ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 30pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA | Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 108.8nC@15V | Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 870uJ | Turn-On Energy (Eon) | 2.69mJ |
| Pulsed Current- Forward(Ifm) | 240A | Output Capacitance(Coes) | 256pF |
| Description | 390W 650V FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | CGWT80N65F2KAD |
| Package | TO-247 | Model Number | CGWT80N65F2KAD |
The CGWT80N65F2KAD is a high-performance IGBT utilizing JSCJ's second-generation Trench and Field Stop (FS) structure technology. It offers high application frequency, low Collector-Emitter Saturation Voltage (Vce(sat)), and low switching loss, making it suitable for parallel operation. Key features include a 650V breakdown voltage, positive temperature coefficient for Vce(sat), high-speed switching, and a fast/soft recovery freewheeling diode for good EMI behavior.
| Parameter | Symbol | Value | Units | Notes | |
| Absolute Maximum Ratings | VCES | 650 | V | ||
| VGES | ±20 | V | |||
| IC (Tc=100) | 80 | A | |||
| IC pulse | 240 | A | tp limited by TJmax | ||
| IF | 80 | A | Tc=100 | ||
| PD (Tc=25) | 390 | W | |||
| Thermal Characteristics | RJC (IGBT) | 0.32 | /W | ||
| RJC (Diode) | 0.6 | /W | |||
| RJA | 40 | /W | |||
| Electrical Characteristics (TJ=25C unless otherwise noted) | V(BR)CES | 650 | V | VGE=0V,ICE=1mA | |
| ICES | -- | 1.0 | mA | VGE=0V,VCE=650V | |
| IGES | -- | ±250 | nA | VGE=±20V | |
| VGE(th) | 4 | 6.5 | V | IC=1mA ,VCE=VGE | |
| VCE(sat) | -- | 1.7 | V | IC=80A,VGE=15V,TJ=25 | |
| VF | -- | 1.52 | V | IF=80A,Tc=25 | |
| Dynamic Parameters | Cies | -- | 2602 | pF | VCE=30V,VGE=0V f=1MHz |
| Coes | -- | 256 | pF | ||
| Cres | -- | 30 | pF | ||
| Rg | -- | 0.66 | |||
| Switching Parameters | td(on) | -- | 26 | ns | VCE=400V,IC=80A,Rg=10, VGE=15V, Inductive Load TJ=25 |
| tr | -- | 68 | ns | ||
| td(off) | -- | 94 | ns | ||
| tf | -- | 26 | ns | ||
| Eon | -- | 2.69 | mJ | Including the reverse recovery of the diode. | |
| Eoff | -- | 0.87 | mJ | ||
| Ets | -- | 3.56 | mJ | ||
| Gate Charge | QG | -- | 108.8 | nC | VCE = 480 V, IC = 80 A, VGE = 15 V |
| QGE | -- | 27.2 | nC | ||
| QGC | -- | 58.8 | nC | ||
| Diode Parameters | trr | -- | 90 | nS | VR = 400V, IF = 80A, diF/dt = 100A/s |
| Qrr | -- | 352 | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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