Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 510ns |
| Pd - Power Dissipation | 2.08kW |
| Td(on) | 370ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 1.5nF |
| Input Capacitance(Cies) | 133nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.9V@17mA |
| Operating Temperature | -40℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 900A |
| Reverse Recovery Time(trr) | 230ns |
| Switching Energy(Eoff) | 39mJ |
| Turn-On Energy (Eon) | 52mJ |
| Description | 2.08kW 1.2kV FS (Field Stop) E3 Single IGBTs RoHS |
| Mfr. Part # | MCF450N120S2E3 |
| Package | E3 |
| Model Number | MCF450N120S2E3 |
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Product Specification
| Td(off) | 510ns | Pd - Power Dissipation | 2.08kW |
| Td(on) | 370ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 1.5nF | Input Capacitance(Cies) | 133nF |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.9V@17mA |
| Operating Temperature | -40℃~+150℃ | Pulsed Current- Forward(Ifm) | 900A |
| Reverse Recovery Time(trr) | 230ns | Switching Energy(Eoff) | 39mJ |
| Turn-On Energy (Eon) | 52mJ | Description | 2.08kW 1.2kV FS (Field Stop) E3 Single IGBTs RoHS |
| Mfr. Part # | MCF450N120S2E3 | Package | E3 |
| Model Number | MCF450N120S2E3 |
The MCF450N120S2E3 module from JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD features advanced Trench and FS (Field Stop) IGBT technology, offering very low Collector-Emitter Saturation Voltage for ease of use in drives and inverters. It boasts high short circuit capability, low switching loss, and high reliability. This module is suitable for applications such as Solar Inverters, Uninterrupted Power Supplies, Servo Drivers, and Motor Drivers.
| Parameter | Symbol | Condition | Value | Units |
| Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | 1200 | V | |
| Gate-Emitter Voltage | VGES | 20 | V | |
| DC Collector Current | IC | Tc=100 | 450 | A |
| Peak Collector Current | ICM | tp=1ms | 900 | A |
| Continuous Diode Forward Current | IF | 450 | A | |
| Diode Peak Forward Current | IFRM | tp=1ms | 900 | A |
| IGBT Maximum Power Dissipation | PD | 2080 | W | |
| IGBT Short Circuit Withstand Time | tsc | 10 | s | |
| Maximum Junction Temperature | TvJ MAX | 175 | ||
| Operating Junction Temperature | TvJ | -40 to 150 | ||
| Storage Temperature | TSTG | -40 to 125 | ||
| Maximum lead temperature for soldering | TL | 260 | ||
| Electrical Characteristics (IGBT) | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=450A, Tvj=25 | 1.75 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=450A, Tvj=125 | 2.15 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=450A, Tvj=150 | 2.25 | V |
| Gate-Emitter Threshold Voltage | VGE(th) | IC=17mA, VCE=VGE | 5.9 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V, VGE=0V | 5 | mA |
| Gate-Emitter Leakage Current | IGES | VCE=0V, VGE=20V | -400 / 400 | nA |
| Internal Gate Resistance | RGint | Tvj=25 | 1.50 | |
| Gate Charge | QG | VGE=-15V~+15V | 7.4 | C |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz | 133.0 | nF |
| Reverse Transfer Capacitance | Cres | 1.5 | nF | |
| Turn-on Delay Time | td(on) | IC=450A, VCE=600V, VGE=15V, RGon=1.3, RGoff=1.3, LS=25nH, Inductive Load, Tvj=25 | 370 | ns |
| Turn-on Delay Time | td(on) | IC=450A, VCE=600V, VGE=15V, RGon=1.3, RGoff=1.3, LS=25nH, Inductive Load, Tvj=125 | 380 | ns |
| Turn-on Delay Time | td(on) | IC=450A, VCE=600V, VGE=15V, RGon=1.3, RGoff=1.3, LS=25nH, Inductive Load, Tvj=150 | 390 | ns |
| Rise Time | tr | Tvj=25 | 160 | ns |
| Rise Time | tr | Tvj=125 | 180 | ns |
| Rise Time | tr | Tvj=150 | 190 | ns |
| Turn-off Delay Time | td(off) | Tvj=25 | 510 | ns |
| Turn-off Delay Time | td(off) | Tvj=125 | 550 | ns |
| Turn-off Delay Time | td(off) | Tvj=150 | 560 | ns |
| Fall Time | tf | Tvj=25 | 90 | ns |
| Fall Time | tf | Tvj=125 | 120 | ns |
| Fall Time | tf | Tvj=150 | 130 | ns |
| Turn-on Energy Loss | Eon | Tvj=25 | 52.0 | mJ |
| Turn-on Energy Loss | Eon | Tvj=125 | 72.5 | mJ |
| Turn-on Energy Loss | Eon | Tvj=150 | 75.5 | mJ |
| Turn-off Energy Loss | Eoff | Tvj=25 | 39.0 | mJ |
| Turn-off Energy Loss | Eoff | Tvj=125 | 49.5 | mJ |
| Turn-off Energy Loss | Eoff | Tvj=150 | 53.5 | mJ |
| Short Circuit Current | ISC | VGE15V, tp10us, VCC=800V, Tvj=150 | 1800 | A |
| Electrical Characteristics (Diode) | ||||
| Forward Voltage | VF | IF=450A, Tvj=25 | 2.25 | V |
| Forward Voltage | VF | IF=450A, Tvj=125 | 2.35 | V |
| Forward Voltage | VF | IF=450A, Tvj=150 | 2.35 | V |
| Reverse Recovery Time | trr | IF=450A, VR=600V, VGE=-15V, diF/dt=-1700A/s, Tvj=25 | 230 | ns |
| Reverse Recovery Time | trr | IF=450A, VR=600V, VGE=-15V, diF/dt=-1700A/s, Tvj=125 | 445 | ns |
| Reverse Recovery Time | trr | IF=450A, VR=600V, VGE=-15V, diF/dt=-1700A/s, Tvj=150 | 580 | ns |
| Reverse Recovery Current | Irr | Tvj=25 | 120 | A |
| Reverse Recovery Current | Irr | Tvj=125 | 155 | A |
| Reverse Recovery Current | Irr | Tvj=150 | 180 | A |
| Reverse Recovery Charge | Qrr | Tvj=25 | 14.5 | C |
| Reverse Recovery Charge | Qrr | Tvj=125 | 35.5 | C |
| Reverse Recovery Charge | Qrr | Tvj=150 | 53.5 | C |
| Reverse Recovery Energy Loss | Erec | Tvj=25 | 4.5 | mJ |
| Reverse Recovery Energy Loss | Erec | Tvj=125 | 13.0 | mJ |
| Reverse Recovery Energy Loss | Erec | Tvj=150 | 20.5 | mJ |
| NTC-Thermistor | ||||
| Rated resistance | R25 | Tc=25 | 5.00 | K |
| Power dissipation | P25 | 10 | mW | |
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298.15K))] | 3380 | K |
| Package Properties | ||||
| IGBT Thermal Resistance: Junction to Case | Rth(J-C) | per IGBT | 0.0721 | K/W |
| Diode Thermal Resistance: Junction to Case | Rth(J-C) | per Diode | 0.0908 | K/W |
| IGBT Thermal Resistance: Case to Heatsink | Rth(C-H) | per IGBT, grease=1W/(mK) | 0.038 | K/W |
| Diode Thermal Resistance: Case to Heatsink | Rth(C-H) | per Diode, grease=1W/(mK) | 0.074 | K/W |
| Isolation Voltage | Visol | RMS, f=50Hz, t=60s | 2500 | V |
| Creepage Distance | dcr | Terminal to Heatsink | 14.5 | mm |
| Creepage Distance | dcr | Terminal to Terminal | 13 | mm |
| Clearance Distance | dcl | Terminal to Heatsink | 12.5 | mm |
| Clearance Distance | dcl | Terminal to Terminal | 10 | mm |
| Comparative Tracking Index | CTI | >200 | ||
| Module Stray Inductance | Ls | CE per Switch | 20 | nH |
| Module lead Resistance | RCC`+EE` | per Switch, TC=25 | 0.80 | m |
| Mounting Torques | M | Baseplate to Heatsink, M5 | 3 to 6 | Nm |
| Mounting Torques | M | Power Terminal, M6 | 3 to 6 | Nm |
| Module Weight | G | 350 | g | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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