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Hefei Purple Horn E-Commerce Co., Ltd.

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China 1200V 200A Trench FS IGBT Half Bridge Module JIAENSEMI GN200HF120T3SS1 for
China 1200V 200A Trench FS IGBT Half Bridge Module JIAENSEMI GN200HF120T3SS1 for

  1. China 1200V 200A Trench FS IGBT Half Bridge Module JIAENSEMI GN200HF120T3SS1 for

1200V 200A Trench FS IGBT Half Bridge Module JIAENSEMI GN200HF120T3SS1 for

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Pd - Power Dissipation 1.071kW
Td(off) 527ns
Td(on) 126ns
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Reverse Transfer Capacitance (Cres) 0.74nF
Input Capacitance(Cies) 14.7nF
IGBT Type FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5V@12.5mA
Operating Temperature -40℃~+175℃
Pulsed Current- Forward(Ifm) 400A
Output Capacitance(Coes) 1.33nF
Switching Energy(Eoff) 21.6mJ
Turn-On Energy (Eon) 5.6mJ
Description 1.071kW 1.2kV FS (Field Stop) Single IGBTs RoHS
Mfr. Part # GN200HF120T3SS1
Model Number GN200HF120T3SS1

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  1. Product Details
  2. Company Details

Product Specification

Pd - Power Dissipation 1.071kW Td(off) 527ns
Td(on) 126ns Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Reverse Transfer Capacitance (Cres) 0.74nF Input Capacitance(Cies) 14.7nF
IGBT Type FS (Field Stop) Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5V@12.5mA
Operating Temperature -40℃~+175℃ Pulsed Current- Forward(Ifm) 400A
Output Capacitance(Coes) 1.33nF Switching Energy(Eoff) 21.6mJ
Turn-On Energy (Eon) 5.6mJ Description 1.071kW 1.2kV FS (Field Stop) Single IGBTs RoHS
Mfr. Part # GN200HF120T3SS1 Model Number GN200HF120T3SS1

Product Overview

The JIAEN GN200HF120T3SS1 is a 1200V, 200A Trench FS IGBT Half-bridge module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC/DC servo drive amplifiers, and power supplies. Key features include a typical VCE(sat) of 1.6V, soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.

Product Attributes

  • Brand: JIAEN
  • Model: GN200HF120T3SS1
  • Module Baseplate Material: Cu
  • Internal Isolation Material: Al2O3
  • Storage Temperature: -40~150

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnits
IGBT Maximum Rated Values
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES+ 20V
Continuous Collector CurrentICTC=70,Tvj max=175200A
Repetitive Peak Collector CurrentICRMtp= 1 ms400A
Maximum Power DissipationPDTC=25,Tvj max=1751071W
IGBT Characteristics
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=200A, Tvj=251.61.9V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=200A, Tvj=1752.0V
Gate Threshold VoltageVGE(th)VGE=VCE, IC=12.5mA5.06.27.5V
Total Gate ChargeQgVGE=-15V+15V1.13uC
Input CapacitanceCiesVCE=25V, VGE=0V, f=100KHz14.7nF
Output CapacitanceCoes1.33nF
Reverse Transfer CapacitanceCres0.74nF
Collector-Emitter Leakage CurrentICESVCE=1200V, VGE=0V1.0mA
Gate Leakage Current, ForwardIGESVGE=20V, VCE=0V200nA
Gate Leakage Current, ReverseIGESVGE=-20V, VCE=0V-200nA
Turn-on Delay Timetd(on)VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25126ns
Turn-on Rise TimetrVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=2577ns
Turn-off Delay Timetd(off)VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25527ns
Turn-off Fall TimetfVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=25185ns
Turn-on Switching LossEonVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=255.6mJ
Turn-off Switching LossEoffVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=2521.6mJ
Total Switching LossEtsVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=2527.2mJ
Turn-on Delay Timetd(on)VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125166ns
Turn-on Rise TimetrVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=12582ns
Turn-off Delay Timetd(off)VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125660ns
Turn-off Fall TimetfVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=125247ns
Turn-on Switching LossEonVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=1258.6mJ
Turn-off Switching LossEoffVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=12529.3mJ
Total Switching LossEtsVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=12537.9mJ
Turn-on Delay Timetd(on)VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175184ns
Turn-on Rise TimetrVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=17584ns
Turn-off Delay Timetd(off)VCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175707ns
Turn-off Fall TimetfVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=175296ns
Turn-on Switching LossEonVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=17510.9mJ
Turn-off Switching LossEoffVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=17532.6mJ
Total Switching LossEtsVCC=600V, VGE=15V, IC=200A, RG=3, Inductive Load, Tvj=17543.5mJ
Short circuit currentIscVGE=15V, Tp10us, Tvj=175, Vcc=600V, VCEM Chip1200V670A
Thermal resistance, junction to caseRth j-c0.14K/W
Temperature under switching conditionTvj op-40175
Diode Maximum Rated Values
Repetitive peak reverse voltageVRRM1200V
Continuous DC Forward CurrentIF200A
Repetitive Peak Collector CurrentIFRMtp=1ms400A
Diode Characteristics
Diode Forward VoltageVFIF=200A, VGE=0V, Tvj=251.82.4V
Diode Forward VoltageVFIF=200A, VGE=0V, Tvj=1751.9V
Peak reverse recovery currentIRMIC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=25149A
Diode Reverse Recovery ChargeQrrIC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=2517.1uC
Reverse recovery energyErecIC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=2512.6mJ
Peak reverse recovery currentIRMIC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=125185A
Diode Reverse Recovery ChargeQrrIC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=12533.6uC
Reverse recovery energyErecIC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=12517.8mJ
Peak reverse recovery currentIRMIC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=175206A
Diode Reverse Recovery ChargeQrrIC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=17543.2uC
Reverse recovery energyErecIC=200A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=17521.9mJ
Thermal resistance, junction to caseRth j-c0.2K/W
Temperature under switching conditionTvj op-40175
Module Specifications
Isolation test voltage RMS, f=50 Hz, t=1 minVISOL4.0kV
Clearance distance in air (Terminal to terminal)10mm
Surface creepage distance (Terminal to terminal)13mm
Comperative tracking indexCTI>200
Mounting torque for module mounting (M6 screws)3~6Nm

2509021810_JIAENSEMI-GN200HF120T3SS1_C51484291.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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