| Td(off) | 460ns |
| Pd - Power Dissipation | 1.04kW |
| Td(on) | 95ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.31nF |
| Input Capacitance(Cies) | 6.4nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2mA |
| Operating Temperature | -40℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 300A |
| Switching Energy(Eoff) | 6.3mJ |
| Turn-On Energy (Eon) | 17mJ |
| Description | 1.04kW 1.2kV FS (Field Stop) Single IGBTs RoHS |
| Mfr. Part # | GL150HF120F1UR1 |
| Model Number | GL150HF120F1UR1 |
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Product Specification
| Td(off) | 460ns | Pd - Power Dissipation | 1.04kW |
| Td(on) | 95ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.31nF | Input Capacitance(Cies) | 6.4nF |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2mA |
| Operating Temperature | -40℃~+150℃ | Pulsed Current- Forward(Ifm) | 300A |
| Switching Energy(Eoff) | 6.3mJ | Turn-On Energy (Eon) | 17mJ |
| Description | 1.04kW 1.2kV FS (Field Stop) Single IGBTs RoHS | Mfr. Part # | GL150HF120F1UR1 |
| Model Number | GL150HF120F1UR1 |
The GL150HF120F1UR1 is a 1200V, 150A IGBT half-bridge module featuring planar field-stop technology for high RBSOA capability and low turn-off losses. It is suitable for applications such as inductive heating, welding, and high-frequency switching.
| Model | Parameter | Test Conditions | Min | Typ | Max | Units |
| GL150HF120F1UR1 | VCES | Collector-Emitter Voltage (Tvj=25) | 1200 | V | ||
| VGES | Gate-Emitter Voltage | + 20 | V | |||
| IC | Continuous Collector Current (TC=80,Tvj max=150) | 150 | A | |||
| ICRM | Repetitive Peak Collector Current | 300 | A | |||
| PD | Maximum Power Dissipation (TC=25,Tvj max=150) | 1040 | W | |||
| VCE(sat) | Collector-Emitter Saturation Voltage (VGE=15V, IC=150A, Tvj=25) | 2.5 | V | |||
| VGE(th) | Gate Threshold Voltage (VGE=VCE, IC=2mA, Tvj=25) | 5.0 | 6.0 | 7.0 | V | |
| Qg | Total Gate Charge (VGE=-15V+15V) | 1.1 | uC | |||
| ICES | Collector-Emitter Leakage Current (VCE=1200V, VGE=0V, Tvj=25) | 1.0 | mA | |||
| IGES | Gate-Emitter Leakage Current, Forward (VGE=20V, VCE=0V, Tvj=25) | 200 | nA | |||
| Rth j-c | Thermal Resistance, Junction to Case (Per IGBT) | 0.12 | K/W | |||
| Diode | VRRM | Repetitive Peak Reverse Voltage | 1200 | V | ||
| IF | Continuous DC Forward Current | 150 | A | |||
| IFRM | Repetitive Peak Collector Current | 300 | A | |||
| VF | Diode Forward Voltage (IF = 150A, Tvj=25) | 2.1 | 3.0 | V | ||
| IRM | Peak Reverse Recovery Current (IC = 150A, VR=600V, -di/dt=2400A/us, VGE = -15V, Tvj=25) | 75 | A | |||
| Qrr | Reverse Recovery Charge (Tvj=25) | 7.0 | uC | |||
| Rth j-c | Thermal Resistance, Junction to Case (Per Diode) | 0.24 | K/W | |||
| Module | Rthc-h | Thermal ResistanceCase to Heatsink (Per Module) | 0.05 | K/W | ||
| LsCE | Stray Inductance Module | 30 | nH | |||
| RCC+EE | Module Lead Resistance Terminals-Chip (TC = 25 Per Switch) | 0.65 | m | |||
| Tstg | Storage Temperature | -40 | 125 | |||
| M | Module Mounting Torque (M6 screws) | 3.0 | 5.0 | Nm | ||
| M | Terminal Mounting Torque (M5 screws) | 2.5 | 6.0 | Nm | ||
| G | Weight | 145 | g | |||
| VISO | Isolation Test Voltage (RMS, f=50 Hz, t=1 min) | 3.0 | kV | |||
| Clearance Distance in Air | Terminal to heatsink | 17 | mm | |||
| Clearance Distance in Air | Terminal to terminal | 9.5 | mm | |||
| Surface Creepage Distance | Terminal to heatsink | 17 | mm | |||
| Surface Creepage Distance | Terminal to terminal | 20 | mm |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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