Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 565W |
| Td(off) | 350ns |
| Td(on) | 57ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.2nF |
| Input Capacitance(Cies) | 4.38nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Operating Temperature | -40℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 200A |
| Switching Energy(Eoff) | 2.7mJ |
| Turn-On Energy (Eon) | 8.8mJ |
| Description | 565W 1.2kV FS (Field Stop) Single IGBTs RoHS |
| Mfr. Part # | GL100HF120F1UR1 |
| Model Number | GL100HF120F1UR1 |
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Product Specification
| Pd - Power Dissipation | 565W | Td(off) | 350ns |
| Td(on) | 57ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.2nF | Input Capacitance(Cies) | 4.38nF |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Operating Temperature | -40℃~+150℃ | Pulsed Current- Forward(Ifm) | 200A |
| Switching Energy(Eoff) | 2.7mJ | Turn-On Energy (Eon) | 8.8mJ |
| Description | 565W 1.2kV FS (Field Stop) Single IGBTs RoHS | Mfr. Part # | GL100HF120F1UR1 |
| Model Number | GL100HF120F1UR1 |
The GL100HF120F1UR1 is a 1200V, 100A IGBT half-bridge module featuring planar field-stop technology, high RBSOA capability, and low turn-off losses. It is designed for applications such as inductive heating, welding, and high-frequency switching.
| Parameter | IGBT Maximum Rated Values | Units | IGBT Characteristics | Test Conditions | Min | Typ | Max | Units | Diode Maximum Rated Values | Units | Diode Characteristics | Test Conditions | Min | Typ | Max | Units | Module | Units | |||
| Collector-Emitter Voltage | 1200 | V | Collector-Emitter Saturation Voltage | VGE=15V, IC=100A, Tvj=25 | - | 2.5 | 3.1 | V | Repetitive Peak Reverse Voltage | 1200 | V | Diode Forward Voltage | IF = 100A, VGE = 0V, Tvj=25 | - | 2.4 | - | V | Module Mounting Torque | 3.0-5.0 | Nm | |
| Gate-Emitter Voltage | +20 | V | VGE=15V, IC=100A, Tvj=125 | - | 3.0 | - | V | Continuous DC Forward Current | 100 | A | IF = 100A, VGE = 0V, Tvj=125 | - | 2.5 | - | V | Terminal Mounting Torque | 2.5-6.0 | Nm | |||
| Continuous Collector Current | 100 | A | Gate Threshold Voltage | VGE=VCE, IC=1mA, Tvj=25 | 5.0 | 6.0 | 7.0 | V | Repetitive Peak Collector Current | 200 | A | IF = 100A, VGE = 0V, Tvj=150 | - | 2.5 | 2.9 | V | Weight | 145 | g | ||
| Repetitive Peak Collector Current | 200 | A | Total Gate Charge | VGE=-15V+15V | - | 0.7 | - | uC | Peak Reverse Recovery Current | IC = 100A, VR=600V, -di/dt=2600A/us, VGE = -15V, Tvj=25 | - | 55 | - | A | Isolation Test Voltage | 3.0 | kV | ||||
| Maximum Power Dissipation | 565 | W | Internal Gate Resistor | Tvj=25 | - | 5 | - | IC = 100A, VR=600V, -di/dt=2600A/us, VGE = -15V, Tvj=125 | - | 55 | - | A | Module Baseplate Material | Cu | |||||||
| Input Capacitance | VCE=25V, VGE=0V, f=1MHz | - | 4.38 | - | nF | IC = 100A, VR=600V, -di/dt=2600A/us, VGE = -15V, Tvj=150 | - | 55 | - | A | Internal Isolation | basic insulation (class 1, IEC 61140) | |||||||||
| Reverse Transfer Capacitance | - | 0.2 | - | nF | Reverse Recovery Charge | Tvj=25 | - | 3.5 | - | uC | Electrical Clearance (Terminal to heatsink) | 17 | mm | ||||||||
| Collector-Emitter Leakage Current | VCE=1200V, VGE=0V, Tvj=25 | - | - | 1.0 | mA | Tvj=125 | - | 7.5 | - | uC | Electrical Clearance (Terminal to terminal) | 9.5 | mm | ||||||||
| Gate-Emitter Leakage Current, Forward | VGE=20V, VCE=0V, Tvj=25 | - | - | 200 | nA | Tvj=150 | - | 9.0 | - | uC | Surface Creepage Distance (Terminal to heatsink) | 17 | mm | ||||||||
| Gate-Emitter Leakage Current, Reverse | VGE=-20V, VCE=0V, Tvj=25 | - | - | -200 | nA | Reverse Recovery Energy | Tvj=25 | - | 2.5 | - | mJ | Surface Creepage Distance (Terminal to terminal) | 20 | mm | |||||||
| Turn-on Delay Time | VCE = 600V, IC = 100A, VGE = 15V, RGon = 4.7, Tvj=25 | - | 57 | - | ns | Tvj=125 | - | 4.2 | - | mJ | Comparative Tracking Index | >200 | |||||||||
| Turn-on Rise Time | Tvj=25 | - | 43 | - | ns | Tvj=150 | - | 4.8 | - | mJ | |||||||||||
| Turn-off Delay Time | VCE = 600V, IC = 100A, VGE = 15V, RGoff = 15, Tvj=25 | - | 350 | - | ns | Thermal Resistance, Junction to Case (Per Diode) | - | 0.5 | - | K/W | |||||||||||
| Turn-off Fall Time | Tvj=25 | - | 22 | - | ns | Temperature Under Switching Condition | -40 | - | 150 | ||||||||||||
| Turn-on Switching Loss | VCE = 600V, IC = 100A, VGE = 15V, RGon = 4.7, RGoff = 15, L = 80nH, Tvj=25 | - | 8.8 | - | mJ | ||||||||||||||||
| Turn-off Switching Loss | Tvj=25 | - | 2.7 | - | mJ | ||||||||||||||||
| Thermal Resistance, Junction to Case (Per IGBT) | - | 0.22 | - | K/W | |||||||||||||||||
| Temperature Under Switching Condition | -40 | - | 150 | ||||||||||||||||||
| Thermal Resistance, Case to Heatsink (Per Module) | - | 0.05 | - | K/W | |||||||||||||||||
| Module Stray Inductance | - | 30 | - | nH | |||||||||||||||||
| Module Lead Resistance (Terminals-Chip) | TC = 25, Per Switch | - | 0.65 | - | m | ||||||||||||||||
| Storage Temperature | -40 | - | 125 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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