Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 210W |
| Td(off) | 290ns |
| Td(on) | 22ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 150pF |
| Input Capacitance(Cies) | 1.25nF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.25mA |
| Pulsed Current- Forward(Ifm) | 60A |
| Output Capacitance(Coes) | 210pF |
| Reverse Recovery Time(trr) | 190ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 2.2mJ |
| Description | 210W 1.2kV NPT (Non-Punch Through) TO-3P Single IGBTs RoHS |
| Mfr. Part # | JNG25N120AI |
| Package | TO-3P |
| Model Number | JNG25N120AI |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 210W | Td(off) | 290ns |
| Td(on) | 22ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 150pF | Input Capacitance(Cies) | 1.25nF |
| IGBT Type | NPT (Non-Punch Through) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.25mA |
| Pulsed Current- Forward(Ifm) | 60A | Output Capacitance(Coes) | 210pF |
| Reverse Recovery Time(trr) | 190ns | Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 2.2mJ | Description | 210W 1.2kV NPT (Non-Punch Through) TO-3P Single IGBTs RoHS |
| Mfr. Part # | JNG25N120AI | Package | TO-3P |
| Model Number | JNG25N120AI |
JIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA using NPT technology.
| Parameter | Condition | Value | Unit |
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | +30 | V | |
| Continuous Collector Current (IC) | TC=25 | 45 | A |
| Continuous Collector Current (IC) | TC=100 | 25 | A |
| Pulsed Collector Current (ICM) | Note 1 | 80 | A |
| Diode Continuous Forward Current (IF) | TC=100 | 25 | A |
| Diode Maximum Forward Current (IFM) | Note 1 | 60 | A |
| Short Circuit Withstand Time (tsc) | VGE=15V, VCC960V, TJ150 | 10 | s |
| Maximum Power Dissipation (PD) | TC=25 | 210 | W |
| Maximum Power Dissipation (PD) | TC=100 | 100 | W |
| Operating Junction Temperature Range (TJ) | -55 to +150 | ||
| Storage Temperature Range (TSTG) | -55 to +150 | ||
| Thermal Resistance, Junction to Case (Rth j-c) for IGBT | 0.48 | /W | |
| Thermal Resistance, Junction to Case (Rth j-c) for Diode | 0.87 | /W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | /W | |
| Collector-Emitter Breakdown Voltage (BVces) | VGE=0V, IC=250A | 1200 | V |
| Collector-Emitter Leakage Current (ICES) | VCE=1200V, VGE=0V | 250 | A |
| Gate Leakage Current, Forward (IGES) | VGE=30V, VCE=0V | 100 | nA |
| Gate Leakage Current, Reverse | VGE=-30V, VCE=0V | -100 | nA |
| Gate Threshold Voltage (VGE(th)) | VGE=VCE, IC=250A | 4.5 - 5.0 - 5.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC=25A, TC=25 | 2.2 - 2.6 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC=25A, TC=125 | 2.7 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC=25A, TC=150 | 3.0 | V |
| Total Gate Charge (Qg) | VCC=960V, VGE=15V, IC=25A | 130 | nC |
| Gate-Emitter Charge (Qge) | 30 | nC | |
| Gate-Collector Charge (Qgc) | 70 | nC | |
| Turn-on Delay Time (td(on)) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 22 | ns |
| Turn-on Rise Time (tr) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 35 | ns |
| Turn-off Delay Time (td(off)) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 290 | ns |
| Turn-off Fall Time (tf) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 170 | ns |
| Turn-on Switching Loss (Eon) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 2.2 | mJ |
| Turn-off Switching Loss (Eoff) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 1.4 | mJ |
| Total Switching Loss (Ets) | VCC=600V, VGE=15V, IC=25A, RG=10, Inductive Load, TC=25 | 3.6 | mJ |
| Input Capacitance (Cies) | VCE=25V, VGE=0V, f=1MHz | 1250 | pF |
| Output Capacitance (Coes) | VCE=25V, VGE=0V, f=1MHz | 210 | pF |
| Reverse Transfer Capacitance (Cres) | VCE=25V, VGE=0V, f=1MHz | 150 | pF |
| Integrated gate resistor (RGint) | 3.8 | ||
| Diode Forward Voltage (VF) | IF=25A, TC=25 | 2.3 - 2.5 | V |
| Diode Reverse Recovery Time (trr) | VCE=600V, IF=25A, dIF/dt=500A/s, TC=25 | 190 | ns |
| Diode peak Reverse Recovery Current (Irr) | VCE=600V, IF=25A, dIF/dt=500A/s, TC=25 | 20 | A |
| Diode Reverse Recovery Charge (Qrr) | VCE=600V, IF=25A, dIF/dt=500A/s, TC=25 | 1600 | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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