Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 122ns |
| Pd - Power Dissipation | 300W |
| Td(on) | 24ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 92pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA |
| Gate Charge(Qg) | 179nC@15V |
| Reverse Recovery Time(trr) | 98ns |
| Switching Energy(Eoff) | 1.14mJ |
| Turn-On Energy (Eon) | 1.38mJ |
| Input Capacitance(Cies) | 3.363nF |
| Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 206pF |
| Description | 300W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | DGTD65T50S1PT-HXY |
| Package | TO-247 |
| Model Number | DGTD65T50S1PT-HXY |
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Product Specification
| Td(off) | 122ns | Pd - Power Dissipation | 300W |
| Td(on) | 24ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 92pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA | Gate Charge(Qg) | 179nC@15V |
| Reverse Recovery Time(trr) | 98ns | Switching Energy(Eoff) | 1.14mJ |
| Turn-On Energy (Eon) | 1.38mJ | Input Capacitance(Cies) | 3.363nF |
| Pulsed Current- Forward(Ifm) | 200A | Output Capacitance(Coes) | 206pF |
| Description | 300W 650V FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | DGTD65T50S1PT-HXY |
| Package | TO-247 | Model Number | DGTD65T50S1PT-HXY |
The DGTD65T50S1PT is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations. The device features a positive temperature coefficient, fast switching, low VCE(sat), and is reliable and rugged. Halogen-free and green (RoHS Compliant) options are available.
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC | 50 | A | Collector Current @TC=100C |
| IC (25C) | 100 | A | Collector Current @TC=25C |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ | 1.65 | V | Collector-Emitter Saturation Voltage Typical |
| PD (25C) | 300 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.50 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.65 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.5 - 6.5 | V | Gate Threshold Voltage (Min - Max) |
| ICES | 10 | A | Collector-Emitter Leakage Current @VCE=650V, VGE=0V |
| Cies | 3363 | pF | Input Capacitance @VGE=0V, VCE=25V, f=1.0MHz |
| Coes | 206 | pF | Output Capacitance |
| Cres | 92 | pF | Reverse Transfer Capacitance |
| Qg | 179 | nC | Gate charge |
| td(on) (TJ=25C) | 24 | ns | Turn-on Delay Time |
| tr (TJ=25C) | 86 | ns | Rise Time |
| td(off) (TJ=25C) | 122 | ns | Turn-Off Delay Time |
| tf (TJ=25C) | 74 | ns | Fall Time |
| Eon (TJ=25C) | 1.38 | mJ | Turn-On Switching Loss |
| Eoff (TJ=25C) | 1.14 | mJ | Turn-Off Switching Loss |
| Ets (TJ=25C) | 2.52 | mJ | Total Switching Loss |
| Trr (TJ=25C) | 98 | ns | Reverse Recovery Time |
| Qrr (TJ=25C) | 1580 | C | Reverse Recovery Charge |
| Irrm (TJ=25C) | 26 | A | Reverse Recovery Current |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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