| Description | Single IGBTs RoHS |
| Mfr. Part # | FF600R17ME4 |
| Model Number | FF600R17ME4 |
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Product Specification
| Description | Single IGBTs RoHS | Mfr. Part # | FF600R17ME4 |
| Model Number | FF600R17ME4 |
The FF600R17ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled diode with NTC. It offers high current density, low VCEsat with a positive temperature coefficient, and high power density with an isolated base plate. This module is suitable for high power converters and wind turbines.
| Parameter | Value | Unit | Condition |
|---|---|---|---|
| IGBT, Inverter | |||
| Collector-emitter voltage | 1700 | V | Tvj = 25C |
| Continuous DC collector current | 600 | A | TC = 108C, Tvj max = 175C |
| Repetitive peak collector current | 1200 | A | tP = 1 ms |
| Gate-emitter peak voltage | +/-20 | V | |
| Collector-emitter saturation voltage | 1.95 | V | IC = 600 A, VGE = 15 V, Tvj = 25C |
| Collector-emitter saturation voltage | 2.35 | V | IC = 600 A, VGE = 15 V, Tvj = 125C |
| Collector-emitter saturation voltage | 2.45 | V | IC = 600 A, VGE = 15 V, Tvj = 150C |
| Gate threshold voltage | 5.80 | V | IC = 24,0 mA, VCE = VGE, Tvj = 25C |
| Gate charge | 6.15 | C | VGE = -15 V ... +15 V |
| Internal gate resistor | 1.2 | Tvj = 25C | |
| Input capacitance | 48.0 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance | 1.55 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current | 1.0 | mA | VCE = 1700 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current | 100 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time, inductive load | 0.21 | s | IC = 600 A, VCE = 900 V, VGE = 15 V, RGon = 1.0 , Tvj = 125C |
| Rise time, inductive load | 0.08 | s | IC = 600 A, VCE = 900 V, VGE = 15 V, RGon = 1.0 , Tvj = 125C |
| Turn-off delay time, inductive load | 0.75 | s | IC = 600 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0 , Tvj = 125C |
| Fall time, inductive load | 0.16 | s | IC = 600 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0 , Tvj = 125C |
| Turn-on energy loss per pulse | 210 | mJ | IC = 600 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, di/dt = 6500 A/s, RGon = 1.0 , Tvj = 125C |
| Turn-off energy loss per pulse | 180 | mJ | IC = 600 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, du/dt = 3000 V/s, RGoff = 1.0 , Tvj = 125C |
| Short circuit data | 2300 | A | VGE 15 V, VCC = 1000 V, VCEmax = VCES - LsCE di/dt, tP 10 s, Tvj = 150C |
| Thermal resistance, junction to case per IGBT | 0.0369 | K/W | |
| Thermal resistance, case to heatsink per IGBT | 0.0328 | K/W | Paste = 1 W/(mK) |
| Temperature in switching operation | 150 | C | Tvj op |
| Diode, Inverter | |||
| Repetitive peak reverse voltage | 1700 | V | Tvj = 25C |
| Continuous DC forward current | 600 | A | |
| Repetitive peak forward current | 1200 | A | tP = 1 ms |
| It - value | 30500 | As | VR = 0 V, tP = 10 ms, Tvj = 150C |
| Forward voltage | 1.90 | V | IF = 600 A, VGE = 0 V, Tvj = 125C |
| Forward voltage | 2.20 | V | IF = 600 A, VGE = 0 V, Tvj = 150C |
| Peak reverse recovery current | 650 | A | IF = 600 A, - diF/dt = 6500 A/s, VR = 900 V, VGE = -15 V, Tvj = 125C |
| Recovered charge | 250 | C | IF = 600 A, - diF/dt = 6500 A/s, VR = 900 V, VGE = -15 V, Tvj = 125C |
| Reverse recovery energy | 145 | mJ | IF = 600 A, - diF/dt = 6500 A/s, VR = 900 V, VGE = -15 V, Tvj = 125C |
| Thermal resistance, junction to case per diode | 0.0730 | K/W | |
| Thermal resistance, case to heatsink per diode | 0.0378 | K/W | Paste = 1 W/(mK) |
| Temperature in switching operation | 150 | C | Tvj op |
| NTC-Thermistor | |||
| Rated resistance | 5.00 | k | TNTC = 25C |
| Deviation of R100 | 5 | % | TNTC = 100C, R100 = 493 |
| Power dissipation | 20.0 | mW | TNTC = 25C |
| B-Value | 3375 | K | R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] |
| B-Value | 3411 | K | R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] |
| B-Value | 3433 | K | R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] |
| Module | |||
| Isolation test voltage | 3.4 | kV | RMS, f = 50 Hz, t = 1 min. |
| Creepage distance terminal to heatsink | 14.5 | mm | |
| Clearance terminal to heatsink | 12.5 | mm | |
| Comperative tracking index | > 200 | ||
| Stray inductance module | 20 | nH | LsCE |
| Module lead resistance, terminals - chip per switch | 1.10 | m | TC = 25C |
| Storage temperature | 125 | C | Tstg |
| Mounting torque for module mounting Screw M5 | 6.00 | Nm | |
| Terminal connection torque Screw M6 | 6.0 | Nm | |
| Weight | 345 | g | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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