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Hefei Purple Horn E-Commerce Co., Ltd.

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China EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive
China EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive

  1. China EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive

EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive

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Description Single IGBTs RoHS
Mfr. Part # FF600R17ME4
Model Number FF600R17ME4

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Product Specification

Description Single IGBTs RoHS Mfr. Part # FF600R17ME4
Model Number FF600R17ME4

Infineon EconoDUAL3 Module FF600R17ME4

The FF600R17ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled diode with NTC. It offers high current density, low VCEsat with a positive temperature coefficient, and high power density with an isolated base plate. This module is suitable for high power converters and wind turbines.

Product Attributes

  • Brand: Infineon
  • Series: EconoDUAL3
  • Module Label Code: FF600R17ME4
  • Material of module baseplate: Cu
  • Internal isolation: Basic insulation (class 1, IEC 61140)
  • Internal isolation material: Al2O3

Technical Specifications

Parameter Value Unit Condition
IGBT, Inverter
Collector-emitter voltage 1700 V Tvj = 25C
Continuous DC collector current 600 A TC = 108C, Tvj max = 175C
Repetitive peak collector current 1200 A tP = 1 ms
Gate-emitter peak voltage +/-20 V
Collector-emitter saturation voltage 1.95 V IC = 600 A, VGE = 15 V, Tvj = 25C
Collector-emitter saturation voltage 2.35 V IC = 600 A, VGE = 15 V, Tvj = 125C
Collector-emitter saturation voltage 2.45 V IC = 600 A, VGE = 15 V, Tvj = 150C
Gate threshold voltage 5.80 V IC = 24,0 mA, VCE = VGE, Tvj = 25C
Gate charge 6.15 C VGE = -15 V ... +15 V
Internal gate resistor 1.2 Tvj = 25C
Input capacitance 48.0 nF f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance 1.55 nF f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current 1.0 mA VCE = 1700 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current 100 nA VCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time, inductive load 0.21 s IC = 600 A, VCE = 900 V, VGE = 15 V, RGon = 1.0 , Tvj = 125C
Rise time, inductive load 0.08 s IC = 600 A, VCE = 900 V, VGE = 15 V, RGon = 1.0 , Tvj = 125C
Turn-off delay time, inductive load 0.75 s IC = 600 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0 , Tvj = 125C
Fall time, inductive load 0.16 s IC = 600 A, VCE = 900 V, VGE = 15 V, RGoff = 1.0 , Tvj = 125C
Turn-on energy loss per pulse 210 mJ IC = 600 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, di/dt = 6500 A/s, RGon = 1.0 , Tvj = 125C
Turn-off energy loss per pulse 180 mJ IC = 600 A, VCE = 900 V, LS = 35 nH, VGE = 15 V, du/dt = 3000 V/s, RGoff = 1.0 , Tvj = 125C
Short circuit data 2300 A VGE 15 V, VCC = 1000 V, VCEmax = VCES - LsCE di/dt, tP 10 s, Tvj = 150C
Thermal resistance, junction to case per IGBT 0.0369 K/W
Thermal resistance, case to heatsink per IGBT 0.0328 K/W Paste = 1 W/(mK)
Temperature in switching operation 150 C Tvj op
Diode, Inverter
Repetitive peak reverse voltage 1700 V Tvj = 25C
Continuous DC forward current 600 A
Repetitive peak forward current 1200 A tP = 1 ms
It - value 30500 As VR = 0 V, tP = 10 ms, Tvj = 150C
Forward voltage 1.90 V IF = 600 A, VGE = 0 V, Tvj = 125C
Forward voltage 2.20 V IF = 600 A, VGE = 0 V, Tvj = 150C
Peak reverse recovery current 650 A IF = 600 A, - diF/dt = 6500 A/s, VR = 900 V, VGE = -15 V, Tvj = 125C
Recovered charge 250 C IF = 600 A, - diF/dt = 6500 A/s, VR = 900 V, VGE = -15 V, Tvj = 125C
Reverse recovery energy 145 mJ IF = 600 A, - diF/dt = 6500 A/s, VR = 900 V, VGE = -15 V, Tvj = 125C
Thermal resistance, junction to case per diode 0.0730 K/W
Thermal resistance, case to heatsink per diode 0.0378 K/W Paste = 1 W/(mK)
Temperature in switching operation 150 C Tvj op
NTC-Thermistor
Rated resistance 5.00 k TNTC = 25C
Deviation of R100 5 % TNTC = 100C, R100 = 493
Power dissipation 20.0 mW TNTC = 25C
B-Value 3375 K R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B-Value 3411 K R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B-Value 3433 K R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
Module
Isolation test voltage 3.4 kV RMS, f = 50 Hz, t = 1 min.
Creepage distance terminal to heatsink 14.5 mm
Clearance terminal to heatsink 12.5 mm
Comperative tracking index > 200
Stray inductance module 20 nH LsCE
Module lead resistance, terminals - chip per switch 1.10 m TC = 25C
Storage temperature 125 C Tstg
Mounting torque for module mounting Screw M5 6.00 Nm
Terminal connection torque Screw M6 6.0 Nm
Weight 345 g

2410010201_Infineon-FF600R17ME4_C541121.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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