Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 441W |
| Td(off) | 262ns |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | IKW40N120H3-HXY |
| Package | TO-247 |
| Model Number | IKW40N120H3-HXY |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 441W | Td(off) | 262ns |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA | Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns | Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ | Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | IKW40N120H3-HXY |
| Package | TO-247 | Model Number | IKW40N120H3-HXY |
The IKW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as PTC, motor drives, and onboard chargers (OBC). The device offers a positive temperature coefficient, fast switching, low VCE(sat), and is reliable and rugged, meeting AEC-Q101 qualification standards. It operates at temperatures up to 175C and is available in Halogen Free and Green (RoHS Compliant) versions.
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| IC (25C) | 80 | A | Collector Current @TC=25C |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage Typical |
| PD (@TC=25C) | 441 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case Thermal Resistance (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| VF (IF=40A, TJ=25C) | 1.85 | V | Diode Forward Voltage |
| ICES (VCE=1200V, VGE=0V) | 10 | A | Collector-Emitter Leakage Current |
| Cies | 3980 | pF | Input Capacitance |
| Qg | 346 | nC | Gate Charge |
| td(on) (TJ=25C) | 25 | ns | Turn-on Delay Time |
| tr (TJ=25C) | 28 | ns | Rise Time |
| td(off) (TJ=25C) | 262 | ns | Turn-Off Delay Time |
| tf (TJ=25C) | 149 | ns | Fall Time |
| Eon (TJ=25C) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (TJ=25C) | 2.30 | mJ | Turn-Off Switching Loss |
| Trr (TJ=25C) | 94 | ns | Reverse Recovery Time |
| Qrr (TJ=25C) | 225 | nC | Reverse Recovery Charge |
| Irrm (TJ=25C) | 9.7 | A | Reverse Recovery Current |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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