Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 55ns |
| Pd - Power Dissipation | 500W |
| Td(on) | 95ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 218pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Gate Charge(Qg) | 340nC@15V |
| Operating Temperature | -55℃~+150℃ |
| Reverse Recovery Time(trr) | 292ns |
| Switching Energy(Eoff) | 6.58mJ |
| Turn-On Energy (Eon) | 3.16mJ |
| Input Capacitance(Cies) | 360pF |
| Pulsed Current- Forward(Ifm) | 150A |
| Output Capacitance(Coes) | 218pF |
| Description | 500W 1.2kV NPT (Non-Punch Through) TO-264 Single IGBTs RoHS |
| Mfr. Part # | JNG50N120LS |
| Package | TO-264 |
| Model Number | JNG50N120LS |
View Detail Information
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Product Specification
| Td(off) | 55ns | Pd - Power Dissipation | 500W |
| Td(on) | 95ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 218pF | IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | Gate Charge(Qg) | 340nC@15V |
| Operating Temperature | -55℃~+150℃ | Reverse Recovery Time(trr) | 292ns |
| Switching Energy(Eoff) | 6.58mJ | Turn-On Energy (Eon) | 3.16mJ |
| Input Capacitance(Cies) | 360pF | Pulsed Current- Forward(Ifm) | 150A |
| Output Capacitance(Coes) | 218pF | Description | 500W 1.2kV NPT (Non-Punch Through) TO-264 Single IGBTs RoHS |
| Mfr. Part # | JNG50N120LS | Package | TO-264 |
| Model Number | JNG50N120LS |
The JNG50N120LS is a 1200V, 50A NPT IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for Induction Heating (IH), UPS, general inverters, and other soft switching applications. Key features include a typical VCE(sat) of 2.1V at VGE=15V and IC=50A, soft current turn-off waveforms, and square RBSOA using NPT technology.
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VCES | Collector-Emitter Voltage | 1200 | V | |||
| VGES | Gate-Emitter Voltage | +30 | V | |||
| IC | Continuous Collector Current (TC=25) | 100 | A | |||
| IC | Continuous Collector Current (TC=100) | 50 | A | |||
| ICM | Pulsed Collector Current (Note 1) | 150 | A | |||
| IF | Diode Continuous Forward Current (TC=100) | 50 | A | |||
| IFM | Diode Maximum Forward Current (Note 1) | 150 | A | |||
| tsc | Short Circuit Withstand TimeTj150 | 10 | us | |||
| PD | Maximum Power Dissipation (TC=25) | 520 | W | |||
| PD | Maximum Power Dissipation (TC=100) | 208 | W | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Rth j-c | Thermal Resistance, Junction to case for IGBT | 0.24 | / W | |||
| Rth j-c | Thermal Resistance, Junction to case for Diode | 0.5 | / W | |||
| Rth j-a | Thermal Resistance, Junction to Ambient | 25 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| BVCES | Collector-Emitter Breakdown Voltage | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| ICES | Collector-Emitter Leakage Current | VCE= 1200V, VGE= 0V | - | - | 250 | uA |
| IGES | Gate Leakage Current, Forward | VGE=30V, VCE= 0V | - | - | 100 | nA |
| IGES | Gate Leakage Current, Reverse | VGE= -30V, VCE= 0V | - | - | -100 | nA |
| VGE(th) | Gate Threshold Voltage | VGE= VCE, IC= 250uA | 4.5 | - | 6.0 | V |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC= 50A, Tc=25 | 2.1 | 2.6 | V | |
| VGE=15V, IC= 50A, Tc=125 | 2.6 | V | ||||
| VGE=15V, IC= 50A, Tc=150 | 2.7 | V | ||||
| Qg | Total Gate Charge | VCC=960V, VGE=15V, IC=50A | - | 340 | - | nC |
| Qge | Gate-Emitter Charge | - | 102 | - | nC | |
| Qgc | Gate-Collector Charge | - | 170 | - | nC | |
| td(on) | Turn-on Delay Time | VCC=600V, VGE=15V, IC=50A, RG=15, TC=25 | - | 49 | - | ns |
| tr | Turn-on Rise Time | - | 95 | - | ns | |
| td(off) | Turn-off Delay Time | - | 630 | - | ns | |
| tf | Turn-off Fall Time | - | 55 | - | ns | |
| Eon | Turn-on Switching Loss | - | 3.42 | - | mJ | |
| Eoff | Turn-off Switching Loss | - | 3.16 | - | mJ | |
| Ets | Total Switching Loss | - | 6.58 | - | mJ | |
| Cies | Input Capacitance | VCE=25V, VGE=0V, f = 1MHz | - | 2834 | - | pF |
| Coes | Output Capacitance | - | 360 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 218 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| VF | Diode Forward Voltage | IF=50A | - | 1.84 | 3.5 | V |
| trr | Diode Reverse Recovery Time | VCE = 600V, IF= 50A, dIF/dt = 200A/us | - | 292 | - | ns |
| Irr | Diode peak Reverse Recovery Current | - | 23.7 | - | A | |
| QRR | Diode Reverse Recovery Charge | - | 2878 | - | nC | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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