Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 31.2W |
| Td(off) | 115ns |
| Td(on) | 11ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 3pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.08mA |
| Gate Charge(Qg) | 22nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 40ns |
| Switching Energy(Eoff) | 30uJ |
| Turn-On Energy (Eon) | 70uJ |
| Input Capacitance(Cies) | 500pF |
| Pulsed Current- Forward(Ifm) | 24A |
| Output Capacitance(Coes) | 16pF |
| Description | 31.2W 650V TO-220FP-3 Single IGBTs RoHS |
| Mfr. Part # | IKA08N65H5 |
| Package | TO-220FP-3 |
| Model Number | IKA08N65H5 |
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Product Specification
| Pd - Power Dissipation | 31.2W | Td(off) | 115ns |
| Td(on) | 11ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 3pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.08mA |
| Gate Charge(Qg) | 22nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 40ns | Switching Energy(Eoff) | 30uJ |
| Turn-On Energy (Eon) | 70uJ | Input Capacitance(Cies) | 500pF |
| Pulsed Current- Forward(Ifm) | 24A | Output Capacitance(Coes) | 16pF |
| Description | 31.2W 650V TO-220FP-3 Single IGBTs RoHS | Mfr. Part # | IKA08N65H5 |
| Package | TO-220FP-3 | Model Number | IKA08N65H5 |
The IKA08N65H5 is a high-speed 5th generation IGBT from Infineon, featuring TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and low QG, it is designed for demanding applications.
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKA08N65H5 | 650V | 10.8A | 1.65V | 175C | K08EEH5 | PG-TO220-3 FP |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 8.0A | - | 1.65 | 2.10 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 9.0A | - | 1.45 | 1.80 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.08mA, VCE = VGE | 3.2 | 4.0 | 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V | - | 40.0 | 4000.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 8.0A | - | 17.0 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 500 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 16 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 3 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 8.0A, VGE = 15V | - | 22.0 | - | nC |
| Switching Characteristics (Inductive Load) | ||||||
| Turn-on delay time (Tvj=25C) | td(on) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 11 | - | ns |
| Rise time (Tvj=25C) | tr | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 5 | - | ns |
| Turn-off delay time (Tvj=25C) | td(off) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 115 | - | ns |
| Fall time (Tvj=25C) | tf | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 15 | - | ns |
| Turn-on energy (Tvj=25C) | Eon | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 0.07 | - | mJ |
| Turn-off energy (Tvj=25C) | Eoff | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 0.03 | - | mJ |
| Total switching energy (Tvj=25C) | Ets | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 0.10 | - | mJ |
| Diode Characteristics (Tvj=25C) | ||||||
| Diode reverse recovery time | trr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 40 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 0.13 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 6.8 | - | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | -220 | - | A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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