Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 31.2W |
| Td(off) | 115ns |
| Td(on) | 11ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 3pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.08mA |
| Gate Charge(Qg) | 22nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 40ns |
| Switching Energy(Eoff) | 30uJ |
| Turn-On Energy (Eon) | 70uJ |
| Input Capacitance(Cies) | 500pF |
| Pulsed Current- Forward(Ifm) | 24A |
| Output Capacitance(Coes) | 16pF |
| Description | 31.2W 650V TO-220FP-3 Single IGBTs RoHS |
| Mfr. Part # | IKA08N65H5 |
| Package | TO-220FP-3 |
| Model Number | IKA08N65H5 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 31.2W | Td(off) | 115ns |
| Td(on) | 11ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 3pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.08mA |
| Gate Charge(Qg) | 22nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 40ns | Switching Energy(Eoff) | 30uJ |
| Turn-On Energy (Eon) | 70uJ | Input Capacitance(Cies) | 500pF |
| Pulsed Current- Forward(Ifm) | 24A | Output Capacitance(Coes) | 16pF |
| Description | 31.2W 650V TO-220FP-3 Single IGBTs RoHS | Mfr. Part # | IKA08N65H5 |
| Package | TO-220FP-3 | Model Number | IKA08N65H5 |
The IKA08N65H5 is a high-speed 5th generation IGBT from Infineon, featuring TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and low QG, it is designed for demanding applications.
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKA08N65H5 | 650V | 10.8A | 1.65V | 175C | K08EEH5 | PG-TO220-3 FP |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 8.0A | - | 1.65 | 2.10 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 9.0A | - | 1.45 | 1.80 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.08mA, VCE = VGE | 3.2 | 4.0 | 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V | - | 40.0 | 4000.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 8.0A | - | 17.0 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 500 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 16 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 3 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 8.0A, VGE = 15V | - | 22.0 | - | nC |
| Switching Characteristics (Inductive Load) | ||||||
| Turn-on delay time (Tvj=25C) | td(on) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 11 | - | ns |
| Rise time (Tvj=25C) | tr | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 5 | - | ns |
| Turn-off delay time (Tvj=25C) | td(off) | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 115 | - | ns |
| Fall time (Tvj=25C) | tf | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 15 | - | ns |
| Turn-on energy (Tvj=25C) | Eon | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 0.07 | - | mJ |
| Turn-off energy (Tvj=25C) | Eoff | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 0.03 | - | mJ |
| Total switching energy (Tvj=25C) | Ets | VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0 | - | 0.10 | - | mJ |
| Diode Characteristics (Tvj=25C) | ||||||
| Diode reverse recovery time | trr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 40 | - | ns |
| Diode reverse recovery charge | Qrr | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 0.13 | - | C |
| Diode peak reverse recovery current | Irrm | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | 6.8 | - | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400V, IF = 4.0A, diF/dt = 800A/s | - | -220 | - | A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!