Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 277W |
| Td(off) | 116ns |
| Td(on) | 47ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 65pF |
| Input Capacitance(Cies) | 3.6nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Operating Temperature | -40℃~+155℃ |
| Pulsed Current- Forward(Ifm) | 75A |
| Output Capacitance(Coes) | 120pF |
| Reverse Recovery Time(trr) | 252ns |
| Switching Energy(Eoff) | 920uJ |
| Turn-On Energy (Eon) | 2.09mJ |
| Description | 277W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG25T120HS |
| Package | TO-247 |
| Model Number | JNG25T120HS |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 277W | Td(off) | 116ns |
| Td(on) | 47ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 65pF | Input Capacitance(Cies) | 3.6nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | Operating Temperature | -40℃~+155℃ |
| Pulsed Current- Forward(Ifm) | 75A | Output Capacitance(Coes) | 120pF |
| Reverse Recovery Time(trr) | 252ns | Switching Energy(Eoff) | 920uJ |
| Turn-On Energy (Eon) | 2.09mJ | Description | 277W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG25T120HS | Package | TO-247 |
| Model Number | JNG25T120HS |
The JNG25T120HS is a 1200V, 25A Trench IGBT from JIAEN Semiconductor designed for high-speed switching applications. It offers lower losses, higher system efficiency, soft current turn-off waveforms, and square RBSOA, making it ideal for induction heating (IH), UPS, general inverters, and other soft switching applications.
| Parameter | Value | Units | Notes |
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | +30 | V | |
| Continuous Collector Current (IC) @ TC=25 | 50 | A | |
| Continuous Collector Current (IC) @ TC=100 | 25 | A | |
| Pulsed Collector Current (ICM) | 75 | A | Note 1 |
| Diode Continuous Forward Current (IF) @ TC=100 | 25 | A | |
| Diode Maximum Forward Current (IFM) | 75 | A | Note 1 |
| Short Circuit Withstand Time (tsc) | 10 | us | |
| Maximum Power Dissipation (PD) @ TC=25 | 277 | W | |
| Maximum Power Dissipation (PD) @ TC=100 | 111 | W | |
| Operating Junction Temperature Range (TJ) | -40 to +155 | ||
| Storage Temperature Range (TSTG) | -55 to +155 | ||
| Thermal Resistance, Junction to Case (Rth j-c) for IGBT | 0.45 | /W | |
| Thermal Resistance, Junction to Case (Rth j-c) for Diode | 1.5 | /W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | /W | |
| Typ. VCE(sat) @ VGE=15V, IC=25A | 2.1 | V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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