| Td(off) | 260ns |
| Pd - Power Dissipation | 175W |
| Td(on) | 33ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 110pF |
| Input Capacitance(Cies) | 550pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Pulsed Current- Forward(Ifm) | 45A |
| Output Capacitance(Coes) | 180pF |
| Reverse Recovery Time(trr) | 255ns |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Description | 175W 1.2kV NPT (Non-Punch Through) TO-3P Single IGBTs RoHS |
| Mfr. Part # | JNG15N120AI |
| Package | TO-3P |
| Model Number | JNG15N120AI |
View Detail Information
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Product Specification
| Td(off) | 260ns | Pd - Power Dissipation | 175W |
| Td(on) | 33ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 110pF | Input Capacitance(Cies) | 550pF |
| IGBT Type | NPT (Non-Punch Through) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Pulsed Current- Forward(Ifm) | 45A | Output Capacitance(Coes) | 180pF |
| Reverse Recovery Time(trr) | 255ns | Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.3mJ | Description | 175W 1.2kV NPT (Non-Punch Through) TO-3P Single IGBTs RoHS |
| Mfr. Part # | JNG15N120AI | Package | TO-3P |
| Model Number | JNG15N120AI |
The JIAEN JNG15N120AI is an NPT IGBT designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for induction heating (IH), UPS, general inverters, and other soft switching applications. Key features include a 1200V voltage rating, 15A current capability, soft current turn-off waveforms, and square RBSOA using NPT technology.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| IGBT Electrical Characteristics | BVCES | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| ICES | VCE= 1200V, VGE= 0V | - | - | 250 | uA | |
| VGE(th) | VGE= VCE, IC= 250uA | 4 | - | 6 | V | |
| VCE(sat) | VGE=15V, IC= 15A | - | 2.2 | 2.7 | V | |
| Qg | VCC=960V VGE=15V IC=15A | - | 70 | - | nC | |
| IGBT Switching Characteristics | td(on) | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | - | 33 | - | ns |
| tr | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | - | 37 | - | ns | |
| td(off) | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | - | 260 | - | ns | |
| tf | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | - | 135 | - | ns | |
| Diode Electrical Characteristics | VF | IF=15A | - | 2.0 | 2.8 | V |
| trr | VCE = 600V IF= 15A dIF/dt = 400A/us | - | 255 | - | ns | |
| Qrr | VCE = 600V IF= 15A dIF/dt = 400A/us | - | 2015 | - | nC | |
| Thermal Characteristics | Rth j-c (IGBT) | - | - | 0.70 | - | / W |
| Rth j-c (Diode) | - | - | 0.98 | - | / W | |
| Rth j-a | - | - | 40 | - | / W | |
| Absolute Maximum Ratings | VCES | - | - | 1200 | - | V |
| VGES | - | - | + 20 | - | V | |
| IC (TC=25) | - | - | 30 | - | A | |
| IC (TC=100) | - | - | 15 | - | A | |
| ICM (Note 1) | - | - | 45 | - | A | |
| PD (TC=25) | - | - | 175 | - | W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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