Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 310ns |
| Pd - Power Dissipation | 330W |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| Reverse Transfer Capacitance (Cres) | 40pF |
| Input Capacitance(Cies) | 1.81nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@0.75mA |
| Gate Charge(Qg) | 235nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 90A |
| Output Capacitance(Coes) | 50pF |
| Switching Energy(Eoff) | 1.4mJ |
| Description | 330W 1.35kV TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IHW30N135R5 |
| Package | TO-247-3 |
| Model Number | IHW30N135R5 |
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Product Specification
| Td(off) | 310ns | Pd - Power Dissipation | 330W |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV | Reverse Transfer Capacitance (Cres) | 40pF |
| Input Capacitance(Cies) | 1.81nF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@0.75mA |
| Gate Charge(Qg) | 235nC@15V | Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 90A | Output Capacitance(Coes) | 50pF |
| Switching Energy(Eoff) | 1.4mJ | Description | 330W 1.35kV TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IHW30N135R5 | Package | TO-247-3 |
| Model Number | IHW30N135R5 |
The IHW30N135R5 is a Reverse Conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic body diode with low forward voltage optimized for soft commutation. It utilizes TRENCHSTOP technology for excellent ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching. This IGBT is designed for applications requiring low EMI and is qualified according to JESD-022. It is Pb-free, RoHS compliant, and halogen-free.
| Type | VCE (V) | IC (A) | VCEsat, Tvj=25C (V) | Tvjmax (C) | Marking | Package |
| IHW30N135R5 | 1350 | 30 | 1.65 | 175 | H30PR5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.50mA | 1350 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A, Tvj = 25C | 1.85 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.75mA, VCE = VGE | 5.1 - 6.4 | V |
| Zero gate voltage collector current | ICES | VCE = 1350V, VGE = 0V, Tvj = 25C | 630 | µA |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 30.0A | 23.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 1810 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 50 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 40 | pF |
| Gate charge | QG | VCC = 1080V, IC = 30.0A, VGE = 15V | 235.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Parameter | Symbol | Conditions | Value | Unit |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 310 | ns |
| Fall time | tf | Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 120 | ns |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 1.40 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.17 | mJ |
| Turn-off delay time | td(off) | Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 385 | ns |
| Fall time | tf | Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 295 | ns |
| Turn-off energy | Eoff | Tvj = 175C, VCC = 600V, IC = 30.0A, VGE = 0.0/15.0V, RG(on) = 10.0Ω, RG(off) = 10.0Ω, Lσ = 175nH, Cσ = 40pF | 2.70 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.57 | mJ |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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