Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 395W |
| Td(off) | 174ns |
| Td(on) | 28ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 17pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.75mA |
| Gate Charge(Qg) | 160nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 92ns |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 2.3mJ |
| Input Capacitance(Cies) | 4.2nF |
| Pulsed Current- Forward(Ifm) | 300A |
| Output Capacitance(Coes) | 130pF |
| Description | 395W 650V TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IKW75N65EH5 |
| Package | TO-247-3 |
| Model Number | IKW75N65EH5 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 395W | Td(off) | 174ns |
| Td(on) | 28ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 17pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.75mA |
| Gate Charge(Qg) | 160nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 92ns | Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 2.3mJ | Input Capacitance(Cies) | 4.2nF |
| Pulsed Current- Forward(Ifm) | 300A | Output Capacitance(Coes) | 130pF |
| Description | 395W 650V TO-247-3 Single IGBTs RoHS | Mfr. Part # | IKW75N65EH5 |
| Package | TO-247-3 | Model Number | IKW75N65EH5 |
The IKW75N65EH5 is a high-speed 5th generation IGBT from Infineon, featuring TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, and serves as a plug-and-play replacement for previous generation IGBTs. This device is copacked with a full-rated RAPID 1 fast and soft antiparallel diode, making it suitable for demanding applications.
| Type | VCE (V) | IC (A) | VCEsat, Tvj=25C (V) | Tvjmax (C) | Marking | Package |
| IKW75N65EH5 | 650 | 75.0 (TC=100C) / 90.0 (TC=25C) | 1.65 | 175 | K75EEH5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 75.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 75.0A, Tvj = 25C | 1.35 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.75mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 1 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 75.0A | 104.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 4200 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 130 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 17 | pF |
| Gate charge | QG | VCC = 520V, IC = 75.0A, VGE = 15V | 160.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Parameter | Symbol | Conditions | Value | Unit |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 28 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 33 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 174 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 41 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 2.30 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 0.90 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 3.20 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1000A/s, L = 30nH, C = 25pF | 92 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1000A/s, L = 30nH, C = 25pF | 1.33 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1000A/s, L = 30nH, C = 25pF | 20.5 | A |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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