Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 240ns |
| Pd - Power Dissipation | 175W |
| Td(on) | 55ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.43nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.25V@0.85mA |
| Operating Temperature | -40℃~+150℃ |
| Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | 670uJ |
| Description | IGBT 1.2kV 25A 175W Through Hole,62.8x56.7mm |
| Mfr. Part # | FS3L25R12W2H3B11 |
| Package | Through Hole,62.8x56.7mm |
| Model Number | FS3L25R12W2H3B11 |
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Product Specification
| Td(off) | 240ns | Pd - Power Dissipation | 175W |
| Td(on) | 55ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.43nF@25V | IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.25V@0.85mA | Operating Temperature | -40℃~+150℃ |
| Switching Energy(Eoff) | 600uJ | Turn-On Energy (Eon) | 670uJ |
| Description | IGBT 1.2kV 25A 175W Through Hole,62.8x56.7mm | Mfr. Part # | FS3L25R12W2H3B11 |
| Package | Through Hole,62.8x56.7mm | Model Number | FS3L25R12W2H3B11 |
The FS3L25R12W2H3_B11 is an EasyPACK module featuring fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT and NTC. It is designed for 3-level and solar applications, offering high speed, low inductive design, and low switching losses. The module boasts an Al2O3 substrate with low thermal resistance, a compact design, and robust PressFIT connection technology with integrated mounting clamps.
| Component | Parameter | Value | Unit | Conditions |
| IGBT, T1 / T4 | Collector-emitter voltage (VCES) | 1200 | V | Tvj = 25C |
| Continuous DC collector current (ICDC) | 25 | A | TH = 60C, Tvj max = 175C | |
| Repetitive peak collector current (ICRM) | 50 | A | tP = 1 ms | |
| Gate-emitter peak voltage (VGES) | ±20 | V | ||
| Collector-emitter saturation voltage (VCE sat) | 2.05 - 2.60 | V | IC = 25 A, VGE = 15 V | |
| Gate threshold voltage (VGEth) | 5.25 - 6.35 | V | IC = 0.85 mA, VCE = VGE, Tvj = 25C | |
| Gate charge (QG) | 0.13 | µC | VGE = -15 / 15 V | |
| Input capacitance (Cies) | 1.43 | nF | f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |
| Reverse transfer capacitance (Cres) | 0.075 | nF | f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | |
| Collector-emitter cut-off current (ICES) | 1.0 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C | |
| Thermal resistance, junction to heatsink (RthJH) | 1.45 | K/W | per IGBT | |
| Diode, D1 / D4 | Repetitive peak reverse voltage (VRRM) | 1200 | V | Tvj = 25C |
| Continuous DC forward current (IF) | 15 | A | ||
| Repetitive peak forward current (IFRM) | 50 | A | tP = 1 ms | |
| I²t - value | 40.0 - 34.0 | A²s | VR = 0 V, tP = 10 ms | |
| Forward voltage (VF) | 1.75 - 2.15 | V | IF = 15 A | |
| Peak reverse recovery current (IRM) | 36.0 - 38.0 | A | IF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C), VR = 350 V | |
| Recovered charge (Qr) | 1.05 - 2.40 | µC | IF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C), VR = 350 V | |
| Reverse recovery energy (Erec) | 0.40 - 0.70 | mJ | IF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C), VR = 350 V | |
| Thermal resistance, junction to heatsink (RthJH) | 2.35 | K/W | per diode | |
| Operating temperature (Tvj op) | -40 - 150 | °C | ||
| IGBT, T2 / T3 | Collector-emitter voltage (VCES) | 650 | V | Tvj = 25C |
| Implemented collector current (ICN) | 30 | A | ||
| Continuous DC collector current (ICDC) | 15 | A | TH = 100°C, Tvj max = 175°C | |
| Repetitive peak collector current (ICRM) | 60 | A | tP = 1 ms | |
| Gate-emitter peak voltage (VGES) | ±20 | V | ||
| Collector-emitter saturation voltage (VCE sat) | 1.20 - 1.45 | V | IC = 15 A, VGE = 15 V | |
| Gate threshold voltage (VGEth) | 4.95 - 6.45 | V | IC = 0.30 mA, VCE = VGE, Tvj = 25°C | |
| Gate charge (QG) | 0.30 | µC | VGE = -15 / 15 V | |
| Input capacitance (Cies) | 1.65 | nF | f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | |
| Reverse transfer capacitance (Cres) | 0.051 | nF | f = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | |
| Thermal resistance, junction to heatsink (RthJH) | 1.75 | K/W | per IGBT | |
| Diode, D2 / D3 | Repetitive peak reverse voltage (VRRM) | 650 | V | Tvj = 25°C |
| Continuous DC forward current (IF) | 25 | A | ||
| Repetitive peak forward current (IFRM) | 50 | A | tP = 1 ms | |
| I²t - value | 40.0 - 50.0 | A²s | VR = 0 V, tP = 10 ms | |
| Forward voltage (VF) | 1.65 - 2.15 | V | IF = 25 A | |
| Peak reverse recovery current (IRM) | 13.0 - 16.0 | A | IF = 25 A, - diF/dt = 1050 A/µs (Tvj=150°C), VR = 350 V | |
| Recovered charge (Qr) | 0.85 - 1.60 | µC | IF = 25 A, - diF/dt = 1050 A/µs (Tvj=150°C), VR = 350 V | |
| Reverse recovery energy (Erec) | 0.15 - 0.30 | mJ | IF = 25 A, - diF/dt = 1050 A/µs (Tvj=150°C), VR = 350 V | |
| Thermal resistance, junction to heatsink (RthJH) | 3.30 | K/W | per diode | |
| Operating temperature (Tvj op) | -40 - 150 | °C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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