Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 833W |
| Td(off) | 190ns |
| Td(on) | 44ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 55pF |
| Input Capacitance(Cies) | 8.408nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.93V@250uA |
| Pulsed Current- Forward(Ifm) | 100A |
| Output Capacitance(Coes) | 197pF |
| Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 3.73mJ |
| Turn-On Energy (Eon) | 2.57mJ |
| Description | 833W 1.2kV TO-247-3LPlus Single IGBTs RoHS |
| Mfr. Part # | JNG50T120QMU2 |
| Package | TO-247-3LPlus |
| Model Number | JNG50T120QMU2 |
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Product Specification
| Pd - Power Dissipation | 833W | Td(off) | 190ns |
| Td(on) | 44ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 55pF | Input Capacitance(Cies) | 8.408nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.93V@250uA | Pulsed Current- Forward(Ifm) | 100A |
| Output Capacitance(Coes) | 197pF | Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 3.73mJ | Turn-On Energy (Eon) | 2.57mJ |
| Description | 833W 1.2kV TO-247-3LPlus Single IGBTs RoHS | Mfr. Part # | JNG50T120QMU2 |
| Package | TO-247-3LPlus | Model Number | JNG50T120QMU2 |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power station, and other soft switching applications.
| Parameter | Value | Units | Conditions |
| VCES | 1200 | V | |
| VGES | + 30 | V | |
| IC (TC=25 ) | 100 | A | Continuous Collector Current |
| IC (TC=100) | 50 | A | Continuous Collector Current |
| ICM | 200 | A | Pulsed Collector Current (Note 1) |
| IF (TC=100 ) | 50 | A | Diode Continuous Forward Current |
| IFM | 100 | A | Diode Maximum Forward Current (Note 1) |
| tsc | 8 | us | Short Circuit Withstand Time |
| PD (TC=25 ) | 833 | W | Maximum Power Dissipation |
| TJ | -55 to +175 | Operating Junction Temperature Range | |
| Rth j-c (IGBT) | 0.18 | / W | Thermal Resistance, Junction to case |
| Rth j-c (Diode) | 0.37 | / W | Thermal Resistance, Junction to case |
| Rth j-a | 40 | / W | Thermal Resistance, Junction to Ambient |
| BVCES | 1200 | V | VGE= 0V, IC= 1mA |
| ICES | - | 10 uA | VCE= 1200V, VGE= 0V |
| IGES | - | + 200 nA | VGE= + 20V, VCE= 0V |
| VGE(th) | 4.93 - 6.93 | V | VGE= VCE, IC= 250uA |
| VCE(sat) | - | 1.55 V | VGE=15V, IC= 50A |
| Qg | - | 291 nC | VCC=960V VGE=15V IC=50A |
| Qge | - | 81 nC | |
| Qgc | - | 110 nC | |
| td(on) | - | 44 ns | VCC=600V VGE=15V IC=50A RG=5 Inductive Load TC=25 |
| tr | - | 95 ns | |
| td(off) | - | 190 ns | |
| tf | - | 264 ns | |
| Eon | - | 2.57 mJ | |
| Eoff | - | 3.73 mJ | |
| Ets | - | 6.31 mJ | |
| Cies | - | 8408 pF | VCE=25V VGE=0V f = 1MHz |
| Coes | - | 197 pF | |
| Cres | - | 55 pF | |
| VF | - | 2.0 - 3.5 V | IF=50A (Diode) |
| trr | - | 94 ns | VCE = 600V IF= 50A DiF/dt = 200A/us (Diode) |
| Irr | - | 9.7 A | (Diode) |
| Qrr | - | 225 nC | (Diode) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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