Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 266ns |
| Pd - Power Dissipation | 625W |
| Td(on) | 42ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 29pF |
| Input Capacitance(Cies) | 3.21nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 198pF |
| Reverse Recovery Time(trr) | 175ns |
| Switching Energy(Eoff) | 1.8mJ |
| Turn-On Energy (Eon) | 4mJ |
| Description | 625W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG40T120HJS1 |
| Package | TO-247 |
| Model Number | JNG40T120HJS1 |
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Product Specification
| Td(off) | 266ns | Pd - Power Dissipation | 625W |
| Td(on) | 42ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 29pF | Input Capacitance(Cies) | 3.21nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | Operating Temperature | -40℃~+175℃ |
| Pulsed Current- Forward(Ifm) | 120A | Output Capacitance(Coes) | 198pF |
| Reverse Recovery Time(trr) | 175ns | Switching Energy(Eoff) | 1.8mJ |
| Turn-On Energy (Eon) | 4mJ | Description | 625W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG40T120HJS1 | Package | TO-247 |
| Model Number | JNG40T120HJS1 |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. This IGBT features 1200V, 40A rating, a typical VCE(sat) of 1.7V, high-speed switching, and soft current turn-off waveforms.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | + 20 | V | |||
| Continuous Collector Current (TC=25 ) | IC | 80 | A | |||
| Continuous Collector Current (TC=100) | IC | 40 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 120 | A | |||
| Diode Continuous Forward Current (TC=100 ) | IF | 40 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 120 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25 ) | PD | 625 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 312 | W | |||
| Operating Junction Temperature Range | TJ | -40 | +175 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.24 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 0.49 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 1200V, VGE= 0V | - | - | 250 | uA |
| Gate Leakage Current, Forward | IGES | VGE= + 20V, VCE= 0V | - | - | + 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC=1mA | 5.0 | 6.0 | 7.0 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 40A | - | 1.7 | - | V |
| Total Gate Charge | Qg | VCC=960V VGE=15V IC=40A | - | 191 | - | nC |
| Turn-on Delay Time | td(on) | VCC=600V VGE=15V IC=40A RG=10 Inductive Load TC=25 | - | 42 | - | ns |
| Turn-on Rise Time | tr | - | 101 | - | ns | |
| Turn-off Delay Time | td(off) | - | 266 | - | ns | |
| Turn-off Fall Time | tf | - | 70 | - | ns | |
| Turn-on Switching Loss | Eon | - | 4.0 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 1.8 | - | mJ | |
| Total Switching Loss | Ets | - | 5.8 | - | mJ | |
| Input Capacitance | Cies | VCE=30V VGE=0V f = 1MHz | - | 3210 | - | pF |
| Output Capacitance | Coes | - | 198 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 29 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=40A | - | 2.0 | - | V |
| Diode Reverse Recovery Time | trr | VCE = 600V IF= 40A dIF/dt = 750A/us | - | 175 | - | ns |
| Diode peak Reverse Recovery Current | Irr | - | 24 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 2000 | - | nC | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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