Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 875ns |
| Pd - Power Dissipation | 694W |
| Td(on) | 165ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 83pF |
| Input Capacitance(Cies) | 9.101nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Operating Temperature | -55℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 225A |
| Output Capacitance(Coes) | 318pF |
| Reverse Recovery Time(trr) | 476ns |
| Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.1mJ |
| Description | 694W 1.2kV TO264 Single IGBTs RoHS |
| Mfr. Part # | JNG75T120LZS1 |
| Package | TO264 |
| Model Number | JNG75T120LZS1 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Td(off) | 875ns | Pd - Power Dissipation | 694W |
| Td(on) | 165ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 83pF | Input Capacitance(Cies) | 9.101nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | Operating Temperature | -55℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 225A | Output Capacitance(Coes) | 318pF |
| Reverse Recovery Time(trr) | 476ns | Switching Energy(Eoff) | 900uJ |
| Turn-On Energy (Eon) | 1.1mJ | Description | 694W 1.2kV TO264 Single IGBTs RoHS |
| Mfr. Part # | JNG75T120LZS1 | Package | TO264 |
| Model Number | JNG75T120LZS1 |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. Key features include 1200V, 75A rating, high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VCES Collector-Emitter Voltage | 1200 | V | |||
| VGES Gate-Emitter Voltage | + 30 | V | |||
| IC Continuous Collector Current (TC=25 ) | 150 | A | |||
| IC Continuous Collector Current (TC=100) | 75 | A | |||
| ICM Pulsed Collector Current (Note 1) | 225 | A | |||
| IF Diode Continuous Forward Current (TC=100 ) | 75 | A | |||
| IFM Diode Maximum Forward Current (Note 1) | 225 | A | |||
| tsc Short Circuit Withstand Time | 10 | us | |||
| PD Maximum Power Dissipation (TC=25 ) | 694 | W | |||
| PD Maximum Power Dissipation (TC=100) | 278 | W | |||
| TJ Operating Junction Temperature Range | -55 | +150 | |||
| TSTG Storage Temperature Range | -55 | +150 | |||
| Thermal Characteristics | |||||
| Rth j-c Thermal Resistance, Junction to case for IGBT | 0.18 | / W | |||
| Rth j-c Thermal Resistance, Junction to case for Diode | 0.5 | / W | |||
| Rth j-a Thermal Resistance, Junction to Ambient | 25 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | |||||
| BVCES Collector-Emitter Breakdown Voltage | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| ICES Collector-Emitter Leakage Current | VCE= 1200V, VGE= 0V | - | - | 100 | uA |
| IGES Gate Leakage Current, Forward | VGE= + 30V, VCE= 0V | - | - | + 100 | nA |
| VGE(th) Gate Threshold Voltage | VGE= VCE, IC= 250uA | 4.5 | - | 6.5 | V |
| VCE(sat) Collector-Emitter Saturation Voltage | VGE=15V, IC= 75A | - | 1.65 | 2.2 | V |
| Qg Total Gate Charge | VCC=960V VGE=15V IC=75A | - | 427 | - | nC |
| Qge Gate-Emitter Charge | - | 129 | - | nC | |
| Qgc Gate-Collector Charge | - | 170 | - | nC | |
| td(on) Turn-on Delay Time | VCC=600V VGE=15V IC=75A RG=15 Inductive Load TC=25 | - | 165 | - | ns |
| tr Turn-on Rise Time | - | 115 | - | ns | |
| td(off) Turn-off Delay Time | - | 875 | - | ns | |
| tf Turn-off Fall Time | - | 163 | - | ns | |
| Eon Turn-on Switching Loss | - | 1.1 | - | mJ | |
| Eoff Turn-off Switching Loss | - | 0.9 | - | mJ | |
| Ets Total Switching Loss | - | 2.0 | - | mJ | |
| Cies Input Capacitance | VCE=25V VGE=0V f = 1MHz | - | 9101 | - | pF |
| Coes Output Capacitance | - | 318 | - | pF | |
| Cres Reverse Transfer Capacitance | - | 83 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | |||||
| VF Diode Forward Voltage | IF=75A | - | 2.1 | 3.2 | V |
| trr Diode Reverse Recovery Time | VCE = 600V IF= 75A dIF/dt = 700A/us | - | 476 | - | ns |
| IRR Diode peak Reverse Recovery Current | - | 25.6 | - | A | |
| QRR Diode Reverse Recovery Charge | - | 5808 | - | nC | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!