Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 176W |
| Td(off) | 220ns |
| Td(on) | 29ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 15pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.3mA |
| Gate Charge(Qg) | 153nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 95ns |
| Switching Energy(Eoff) | 240uJ |
| Turn-On Energy (Eon) | 850uJ |
| Input Capacitance(Cies) | 3.69nF |
| Pulsed Current- Forward(Ifm) | 42A |
| Output Capacitance(Coes) | 34pF |
| Description | 176W 650V TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IHW30N65R5 |
| Package | TO-247-3 |
| Model Number | IHW30N65R5 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 176W | Td(off) | 220ns |
| Td(on) | 29ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 15pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.3mA |
| Gate Charge(Qg) | 153nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 95ns | Switching Energy(Eoff) | 240uJ |
| Turn-On Energy (Eon) | 850uJ | Input Capacitance(Cies) | 3.69nF |
| Pulsed Current- Forward(Ifm) | 42A | Output Capacitance(Coes) | 34pF |
| Description | 176W 650V TO-247-3 Single IGBTs RoHS | Mfr. Part # | IHW30N65R5 |
| Package | TO-247-3 | Model Number | IHW30N65R5 |
The IHW30N65R5 is a Reverse conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic reverse-conducting diode with a low forward voltage. It utilizes TRENCHSTOPTM technology for tight parameter distribution, high ruggedness, stable temperature behavior, low VCEsat and Eoff, and easy parallel switching. This IGBT is designed for applications requiring low EMI and is qualified according to JESD-022. It is Pb-free and RoHS compliant.
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IHW30N65R5 | 650V | 60.0A | 1.35V | 175C | H30ER5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 25C | 1.35 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 30.0A, Tvj = 175C | 1.70 | - |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A, Tvj = 25C | 1.70 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 30.0A, Tvj = 175C | 2.10 | - |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.30mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - 40 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 30.0A | - 35.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - 3690 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - 34 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - 15 | pF |
| Gate charge | QG | VCC = 520V, IC = 30.0A, VGE = 15V | - 153.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | - 13.0 | nH |
| Turn-on delay time | td(on) | Tvj = 25C | - 29 | ns |
| Rise time | tr | Tvj = 25C | - 17 | ns |
| Turn-off delay time | td(off) | Tvj = 25C | - 220 | ns |
| Fall time | tf | Tvj = 25C | - 8 | ns |
| Turn-on energy | Eon | Tvj = 25C | - 0.85 | mJ |
| Turn-off energy | Eoff | Tvj = 25C | - 0.24 | mJ |
| Total switching energy | Ets | Tvj = 25C | - 1.09 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C | - 95 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C | - 1.90 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C | - 28.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C | - -2000 | A/s |
| Turn-on delay time | td(on) | Tvj = 175C | - 28 | ns |
| Rise time | tr | Tvj = 175C | - 16 | ns |
| Turn-off delay time | td(off) | Tvj = 175C | - 240 | ns |
| Fall time | tf | Tvj = 175C | - 18 | ns |
| Turn-on energy | Eon | Tvj = 175C | - 0.95 | mJ |
| Turn-off energy | Eoff | Tvj = 175C | - 0.41 | mJ |
| Total switching energy | Ets | Tvj = 175C | - 1.36 | mJ |
| Diode reverse recovery time | trr | Tvj = 175C | - 114 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 175C | - 3.30 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 175C | - 45.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 175C | - -1650 | A/s |
| Parameter | Symbol | Conditions | Max. Value | Unit |
| IGBT thermal resistance, junction - case | Rth(j-c) | Characteristic | 0.81 | K/W |
| Diode thermal resistance, junction - case | Rth(j-c) | Characteristic | 3.81 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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