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Hefei Purple Horn E-Commerce Co., Ltd.

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China Motor control IGBT JIAENSEMI JNG10T65DJS1 650V 10A designed for high speed
China Motor control IGBT JIAENSEMI JNG10T65DJS1 650V 10A designed for high speed

  1. China Motor control IGBT JIAENSEMI JNG10T65DJS1 650V 10A designed for high speed

Motor control IGBT JIAENSEMI JNG10T65DJS1 650V 10A designed for high speed

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Pd - Power Dissipation 100W
Td(off) 71ns
Td(on) 12ns
Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 10pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.2V@250uA
Gate Charge(Qg) 28nC@15V
Operating Temperature -40℃~+175℃
Reverse Recovery Time(trr) 57ns
Switching Energy(Eoff) 170uJ
Turn-On Energy (Eon) 180uJ
Input Capacitance(Cies) 670pF
Pulsed Current- Forward(Ifm) 30A
Output Capacitance(Coes) 37pF
Description 100W 650V TO-252-2L Single IGBTs RoHS
Mfr. Part # JNG10T65DJS1
Package TO-252-2L
Model Number JNG10T65DJS1

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  1. Product Details
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Product Specification

Pd - Power Dissipation 100W Td(off) 71ns
Td(on) 12ns Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 10pF Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.2V@250uA
Gate Charge(Qg) 28nC@15V Operating Temperature -40℃~+175℃
Reverse Recovery Time(trr) 57ns Switching Energy(Eoff) 170uJ
Turn-On Energy (Eon) 180uJ Input Capacitance(Cies) 670pF
Pulsed Current- Forward(Ifm) 30A Output Capacitance(Coes) 37pF
Description 100W 650V TO-252-2L Single IGBTs RoHS Mfr. Part # JNG10T65DJS1
Package TO-252-2L Model Number JNG10T65DJS1

JNG10T65DJS1 IGBT

The JNG10T65DJS1 is a 650V, 10A IGBT designed for high-speed switching applications. It offers high system efficiency, particularly beneficial for motor control, and features soft current turn-off waveforms. This IGBT is suitable for motor drives and home appliances.

Product Attributes

  • Brand: JIAEN Semiconductor Co., Ltd
  • Model: JNG10T65DJS1
  • Package: TO-252-2L

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Units
Absolute Maximum RatingsVCES650V
VGES±20V
IC (TC=25)20A
IC (TC=100)10A
ICM (Note 1)30A
IF (TC=100)10A
IFM (Note 1)30A
Thermal CharacteristicsRth j-c (IGBT)1.5/ W
Rth j-c (Diode)2.0/ W
Rth j-a62/ W
Electrical Characteristics (TC=25 unless otherwise noted)BVCESVGE= 0V, IC= 250uA650--V
ICESVCE= 650V, VGE= 0V--50uA
IGES (Forward)VGE=20V, VCE= 0V--100nA
IGES (Reverse)VGE= -20V, VCE= 0V---100nA
VGE(th)VGE= VCE, IC= 250uA5.25.86.4V
VCE(sat)VGE=15V, IC= 10A-1.82.2V
CiesVCE=30V VGE=0V f = 1MHz-670-pF
Coes-37-pF
Cres-10-pF
QgVCC=520V VGE=15V IC=10A-28-nC
Switching Characteristics (Inductive Load)t d(on) (TC=25 )VCC=400V VGE=0/15V IC=10A RG=10-12-ns
t r (TC=25 )-11-ns
t d(off) (TC=25 )-71-ns
t f (TC=25 )-74-ns
Eon (TC=25 )-0.18-mJ
Eoff (TC=25 )-0.17-mJ
Switching Characteristics (Inductive Load)t d(on) (TC=150 )VCC=400V VGE=0/15V IC=10A RG=10-10-ns
t r (TC=150 )-12-ns
t d(off) (TC=150 )-86-ns
t f (TC=150 )-112-ns
Eon (TC=150 )-0.21-mJ
Eoff (TC=150 )-0.25-mJ
Diode Electrical Characteristics (TC=25 unless otherwise noted)VFIF=10A-1.41.8V
trrVCE = 400V IF= 10A dIF/dt = -750A/us-57-ns
IRRM-12-A
Qrr-411-nC
Diode Electrical Characteristics (TC=150 unless otherwise noted)VFIF=10A-1.2-V
trrVCE = 400V IF= 10A dIF/dt = -750A/us-118-ns
IRRM-13-A
Qrr-728-nC

2509021810_JIAENSEMI-JNG10T65DJS1_C51484239.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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