Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 109ns |
| Pd - Power Dissipation | 349W |
| Td(on) | 15ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 52pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@400uA |
| Gate Charge(Qg) | 136nC |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Reverse Recovery Time(trr) | 114ns |
| Switching Energy(Eoff) | 700uJ |
| Turn-On Energy (Eon) | 1mJ |
| Input Capacitance(Cies) | 3.085nF |
| Pulsed Current- Forward(Ifm) | 100A |
| Output Capacitance(Coes) | 94pF |
| Description | IGBT FS (Field Stop) 1.2kV 100A 349W Through Hole TO-247 |
| Mfr. Part # | NGTB25N120FL3WG |
| Package | TO-247 |
| Model Number | NGTB25N120FL3WG |
View Detail Information
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Product Specification
| Td(off) | 109ns | Pd - Power Dissipation | 349W |
| Td(on) | 15ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 52pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@400uA | Gate Charge(Qg) | 136nC |
| Operating Temperature | -55℃~+175℃@(Tj) | Reverse Recovery Time(trr) | 114ns |
| Switching Energy(Eoff) | 700uJ | Turn-On Energy (Eon) | 1mJ |
| Input Capacitance(Cies) | 3.085nF | Pulsed Current- Forward(Ifm) | 100A |
| Output Capacitance(Coes) | 94pF | Description | IGBT FS (Field Stop) 1.2kV 100A 349W Through Hole TO-247 |
| Mfr. Part # | NGTB25N120FL3WG | Package | TO-247 |
| Model Number | NGTB25N120FL3WG |
This Insulated Gate Bipolar Transistor (IGBT) features an Ultra Field Stop Trench construction, offering a robust and cost-effective solution for demanding switching applications. It provides superior performance with low on-state voltage and minimal switching loss, making it well-suited for UPS and solar applications. The device includes a soft and fast co-packaged free-wheeling diode with a low forward voltage.
| Rating | Symbol | Value | Unit | Test Conditions |
| Collectoremitter voltage | VCES | 1200 | V | |
| Collector current @ TC = 25C | IC | 50 | A | |
| Collector current @ TC = 100C | IC | 25 | A | |
| Pulsed collector current, Tpulse limited by TJmax | ICM | 100 | A | |
| Diode forward current @ TC = 25C | IF | 50 | A | |
| Diode forward current @ TC = 100C | IF | 25 | A | |
| Diode pulsed current, Tpulse limited by TJmax | IFM | 100 | A | |
| Gateemitter voltage | VGE | 20 | V | |
| Transient gateemitter voltage (Tpulse = 5 s, D < 0.10) | VGE | 30 | V | |
| Power Dissipation @ TC = 25C | PD | 349 | W | |
| Power Dissipation @ TC = 100C | PD | 174 | W | |
| Operating junction temperature range | TJ | -55 to +175 | C | |
| Storage temperature range | Tstg | -55 to +175 | C | |
| Lead temperature for soldering, 1/8 from case for 5 seconds | TSLD | 260 | C | |
| Thermal resistance junctiontocase, for IGBT | R JC | 0.43 | C/W | |
| Thermal resistance junctiontocase, for Diode | R JC | 0.78 | C/W | |
| Thermal resistance junctiontoambient | R JA | 40 | C/W | |
| Collectoremitter breakdown voltage, gateemitter shortcircuited | V(BR)CES | 1200 | V | VGE = 0 V, IC = 500 A |
| Collectoremitter saturation voltage | VCEsat | 1.70 | V | VGE = 15 V, IC = 25 A |
| Collectoremitter saturation voltage @ TJ = 175C | VCEsat | 1.95 | V | VGE = 15 V, IC = 25 A |
| Gateemitter threshold voltage | VGE(th) | 4.5 - 6.5 | V | VGE = VCE, IC = 400 A |
| Collectoremitter cutoff current, gate emitter shortcircuited | ICES | 0.4 | mA | VGE = 0 V, VCE = 1200 V |
| Collectoremitter cutoff current, gate emitter shortcircuited @ TJ = 175C | ICES | 0.1 | mA | VGE = 0 V, VCE = 1200 V |
| Gate leakage current, collectoremitter shortcircuited | IGES | 200 | nA | VGE = 20 V , VCE = 0 V |
| Input capacitance | Cies | 3085 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz |
| Output capacitance | Coes | 94 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz |
| Reverse transfer capacitance | Cres | 52 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz |
| Gate charge total | Qg | 136 | nC | VCE = 600 V, IC = 25 A, VGE = 15 V |
| Gate to emitter charge | Qge | 29 | nC | VCE = 600 V, IC = 25 A, VGE = 15 V |
| Gate to collector charge | Qgc | 67 | nC | VCE = 600 V, IC = 25 A, VGE = 15 V |
| Turnon delay time @ TJ = 25C | td(on) | 15 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Rise time @ TJ = 25C | tr | 21 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnoff delay time @ TJ = 25C | td(off) | 109 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Fall time @ TJ = 25C | tf | 131 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnon switching loss @ TJ = 25C | Eon | 1.0 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnoff switching loss @ TJ = 25C | Eoff | 0.7 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Total switching loss @ TJ = 25C | Ets | 1.7 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnon delay time @ TJ = 150C | td(on) | 15 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Rise time @ TJ = 150C | tr | 21 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnoff delay time @ TJ = 150C | td(off) | 113 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Fall time @ TJ = 150C | tf | 169 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnon switching loss @ TJ = 150C | Eon | 1.45 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnoff switching loss @ TJ = 150C | Eoff | 0.95 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Total switching loss @ TJ = 150C | Ets | 2.4 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Forward voltage @ IF = 25 A | VF | 3.0 | V | VGE = 0 V, TJ = 25C |
| Forward voltage @ IF = 25 A, TJ = 175C | VF | 2.8 | V | VGE = 0 V |
| Reverse recovery time @ TJ = 25C | trr | 90 | ns | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery charge @ TJ = 25C | Qrr | 0.62 | C | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery current @ TJ = 25C | Irrm | 12 | A | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Diode peak rate of fall of reverse recovery current during tb | dIrrm/dt | -256 | A/ s | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery time @ TJ = 125C | trr | 114 | ns | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery charge @ TJ = 125C | Qrr | 1.17 | C | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery current @ TJ = 125C | Irrm | 17 | A | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Diode peak rate of fall of reverse recovery current during tb | dIrrm/dt | -296 | A/ s | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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