Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 112ns |
| Pd - Power Dissipation | 290W |
| Td(on) | 24ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 60pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Gate Charge(Qg) | 120nC |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Reverse Recovery Time(trr) | 45ns |
| Switching Energy(Eoff) | 460uJ |
| Turn-On Energy (Eon) | 1.19mJ |
| Input Capacitance(Cies) | 2.11nF |
| Output Capacitance(Coes) | 200pF |
| Description | IGBT FS (Field Stop) 600V 80A 290W Through Hole TO-247 |
| Mfr. Part # | FGH40N60UFDTU |
| Package | TO-247 |
| Model Number | FGH40N60UFDTU |
View Detail Information
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Product Specification
| Td(off) | 112ns | Pd - Power Dissipation | 290W |
| Td(on) | 24ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 60pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | Gate Charge(Qg) | 120nC |
| Operating Temperature | -55℃~+150℃@(Tj) | Reverse Recovery Time(trr) | 45ns |
| Switching Energy(Eoff) | 460uJ | Turn-On Energy (Eon) | 1.19mJ |
| Input Capacitance(Cies) | 2.11nF | Output Capacitance(Coes) | 200pF |
| Description | IGBT FS (Field Stop) 600V 80A 290W Through Hole TO-247 | Mfr. Part # | FGH40N60UFDTU |
| Package | TO-247 | Model Number | FGH40N60UFDTU |
Utilizing novel Field Stop IGBT technology, ON Semiconductor's field stop IGBTs deliver optimal performance for applications such as solar inverters, UPS, welders, microwave ovens, telecom, ESS, and PFC. These devices are designed for scenarios requiring low conduction and switching losses, offering high current capability, low saturation voltage (VCE(sat) = 1.8 V @ IC = 40 A), high input impedance, and fast switching. The device is Pb-Free and RoHS Compliant.
| Symbol | Description | Ratings | Unit |
| ABSOLUTE MAXIMUM RATINGS | |||
| VCES | Collector to Emitter Voltage | 600 | V |
| VGES | Gate to Emitter Voltage | ±20 | V |
| Transient Gate-to-Emitter Voltage | ±30 | V | |
| IC | Collector Current (TC = 25°C) | 80 | A |
| Collector Current (TC = 100°C) | 40 | A | |
| ICM (Note 1) | Pulsed Collector Current (TC = 25°C) | 120 | A |
| PD | Maximum Power Dissipation (TC = 25°C) | 290 | W |
| Maximum Power Dissipation (TC = 100°C) | 116 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | °C |
| TSTG | Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds | 300 | °C |
| THERMAL CHARACTERISTICS | |||
| RJC (IGBT) | Thermal Resistance, Junction to Case | - | 0.43 °C/W |
| RJC (Diode) | Thermal Resistance, Junction to Case | - | 1.45 °C/W |
| RJA | Thermal Resistance, Junction to Ambient | - | 40 °C/W |
| ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) | |||
| BVCES | Collector to Emitter Breakdown Voltage (VGE = 0 V, IC = 250 µA) | 600 | V |
| BVCES / ΔTJ | Temperature Coefficient of Breakdown Voltage (VGE = 0 V, IC = 250 µA) | - 0.6 | V/°C |
| ICES | Collector Cut-Off Current (VCE = VCES, VGE = 0 V) | - | 250 µA |
| IGES | G-E Leakage Current (VGE = VGES, VCE = 0 V) | - | ±400 nA |
| VGE(th) | G-E Threshold Voltage (IC = 250 µA, VCE = VGE) | 4.0 - 6.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage (IC = 40 A, VGE = 15 V) | - 2.4 | V |
| Collector to Emitter Saturation Voltage (IC = 40 A, VGE = 15 V, TC = 125°C) | - 2.0 | V | |
| DYNAMIC CHARACTERISTICS | |||
| Cies | Input Capacitance (VCE = 30 V, VGE = 0 V, f = 1 MHz) | - 2110 | pF |
| Coes | Output Capacitance | - 200 | pF |
| Cres | Reverse Transfer Capacitance | - 60 | pF |
| SWITCHING CHARACTERISTICS (TC = 25°C) | |||
| Eon | Turn-On Switching Loss | - 1.19 | mJ |
| Eoff | Turn-Off Switching Loss | - 0.46 | mJ |
| Ets | Total Switching Loss | - 1.65 | mJ |
| SWITCHING CHARACTERISTICS (TC = 125°C) | |||
| Eon | Turn-On Switching Loss | - 1.2 | mJ |
| Eoff | Turn-Off Switching Loss | - 0.69 | mJ |
| Ets | Total Switching Loss | - 1.89 | mJ |
| GATE CHARGE CHARACTERISTICS | |||
| Qg | Total Gate Charge (VCE = 400 V, IC = 40 A, VGE = 15 V) | - 120 | nC |
| Qge | Gate to Emitter Charge | - 14 | nC |
| Qgc | Gate to Collector Charge | - 58 | nC |
| ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) | |||
| VFM | Diode Forward Voltage (IF = 20 A, TC = 25°C) | - 2.6 | V |
| Diode Forward Voltage (IF = 20 A, TC = 125°C) | - 1.85 | V | |
| Trr | Diode Reverse Recovery Time (IF = 20 A, diF/dt = 200 A/µs, TC = 25°C) | - 45 | ns |
| Diode Reverse Recovery Time (IF = 20 A, diF/dt = 200 A/µs, TC = 125°C) | - 140 | ns | |
| Qrr | Diode Reverse Recovery Charge (TC = 25°C) | - 75 | nC |
| Diode Reverse Recovery Charge (TC = 125°C) | - 375 | nC | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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