Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 630ns |
| Pd - Power Dissipation | 180W |
| Td(on) | 140ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV |
| Reverse Transfer Capacitance (Cres) | 200pF |
| Input Capacitance(Cies) | 6nF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@60mA |
| Gate Charge(Qg) | 275nC@15V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Output Capacitance(Coes) | 260pF |
| Reverse Recovery Time(trr) | 1.2us |
| Turn-On Energy (Eon) | - |
| Description | IGBT 1kV 60A 180W Through Hole TO-264-3 |
| Mfr. Part # | FGL60N100BNTDTU |
| Package | TO-264-3 |
| Model Number | FGL60N100BNTDTU |
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Product Specification
| Td(off) | 630ns | Pd - Power Dissipation | 180W |
| Td(on) | 140ns | Collector-Emitter Breakdown Voltage (Vces) | 1kV |
| Reverse Transfer Capacitance (Cres) | 200pF | Input Capacitance(Cies) | 6nF |
| IGBT Type | NPT (Non-Punch Through) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@60mA |
| Gate Charge(Qg) | 275nC@15V | Operating Temperature | -55℃~+150℃@(Tj) |
| Output Capacitance(Coes) | 260pF | Reverse Recovery Time(trr) | 1.2us |
| Turn-On Energy (Eon) | - | Description | IGBT 1kV 60A 180W Through Hole TO-264-3 |
| Mfr. Part # | FGL60N100BNTDTU | Package | TO-264-3 |
| Model Number | FGL60N100BNTDTU |
The FGL60N100BNTD is a 1000 V, 60 A NPT Trench IGBT utilizing Fairchild's proprietary trench design and advanced NPT technology. It offers superior conduction and switching performance, high avalanche ruggedness, and easy parallel operation, making it ideal for hard switching applications such as UPS and welders. The device features high input impedance and a built-in fast recovery diode.
| Part Number | Top Mark | Package | Collector to Emitter Voltage (Vces) | Gate to Emitter Voltage (Vges) | Collector Current (IC @ TC=25C) | Collector Current (IC @ TC=100C) | Pulsed Collector Current (ICM @ TC=25C) | Diode Continuous Forward Current (IF @ TC=100C) | Max Power Dissipation (PD @ TC=25C) | Max Power Dissipation (PD @ TC=100C) | Operating Junction Temperature (TJ) | Storage Temperature Range (Tstg) | Max Lead Temp. (TL) | Thermal Resistance Junction to Case (RJC(IGBT)) | Thermal Resistance Junction to Case (RJC(Diode)) | Thermal Resistance Junction to Ambient (RJA) | Collector to Emitter Breakdown Voltage (BVCES) | Collector Cut-Off Current (ICES) | G-E Leakage Current (IGES) | G-E Threshold Voltage (VGE(th)) | Collector to Emitter Saturation Voltage (VCE(sat) @ IC=10A, VGE=15V) | Collector to Emitter Saturation Voltage (VCE(sat) @ IC=60A, VGE=15V) | Input Capacitance (Cies) | Output Capacitance (Coes) | Reverse Transfer Capacitance (Cres) | Turn-On Delay Time (td(on)) | Rise Time (tr) | Turn-Off Delay Time (td(off)) | Fall Time (tf) | Total Gate Charge (Qg) | Gate to Emitter Charge (Qge) | Gate to Collector Charge (Qgc) | Diode Forward Voltage (VFM @ IF=15A) | Diode Forward Voltage (VFM @ IF=60A) | Diode Reverse Recovery Time (trr) | Instantaneous Reverse Current (IR) |
| FGL60N100BNTD | FGL60N100BNTD | TO-264 | 1000 V | 25 V | 60 A | 42 A | 200 A | 15 A | 180 W | 72 W | -55 to +150 C | -55 to +150 C | 300 C | 0.69 C/W | 2.08 C/W | 25 C/W | 1000 V | 1 mA | 500 nA | 4.0 - 7.0 V | - 1.5 1.8 V | - 2.5 2.9 V | - 6000 pF | - 260 pF | - 200 pF | - 140 ns | - 320 ns | - 630 ns | - 130 ns | - 275 nC | - 45 nC | - 95 nC | - 1.2 1.7 V | - 1.8 2.1 V | 1.2 - 1.5 us | 0.05 - 2.0 uA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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