Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 90ns |
| Pd - Power Dissipation | 250W |
| Td(on) | 40ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 200pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@80mA |
| Gate Charge(Qg) | 345nC |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Reverse Recovery Time(trr) | 50ns |
| Switching Energy(Eoff) | 1.76mJ |
| Turn-On Energy (Eon) | 2.5mJ |
| Input Capacitance(Cies) | 5nF |
| Pulsed Current- Forward(Ifm) | 280A |
| Output Capacitance(Coes) | 600pF |
| Description | IGBT 600V 160A 250W Through Hole TO-264-3 |
| Mfr. Part # | SGL160N60UFDTU |
| Package | TO-264-3 |
| Model Number | SGL160N60UFDTU |
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Product Specification
| Td(off) | 90ns | Pd - Power Dissipation | 250W |
| Td(on) | 40ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 200pF | IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@80mA | Gate Charge(Qg) | 345nC |
| Operating Temperature | -55℃~+150℃@(Tj) | Reverse Recovery Time(trr) | 50ns |
| Switching Energy(Eoff) | 1.76mJ | Turn-On Energy (Eon) | 2.5mJ |
| Input Capacitance(Cies) | 5nF | Pulsed Current- Forward(Ifm) | 280A |
| Output Capacitance(Coes) | 600pF | Description | IGBT 600V 160A 250W Through Hole TO-264-3 |
| Mfr. Part # | SGL160N60UFDTU | Package | TO-264-3 |
| Model Number | SGL160N60UFDTU |
The Fairchild SGL160N60UFD is an Ultrafast IGBT from the UFD series, designed for high-speed switching applications. It offers low conduction and switching losses, making it suitable for motor control, general inverters, robotics, servo controls, and power supplies. Key features include high input impedance and a CO-PAK with an integrated Fast Diode (FRD) for enhanced performance.
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | |||||
| Collector-Emitter Voltage (VCES) | 600 | V | |||
| Gate-Emitter Voltage (VGES) | ± 20 | V | |||
| Collector Current @ TC = 25°C (IC) | 160 | A | |||
| Collector Current @ TC = 100°C (IC) | 80 | A | |||
| Pulsed Collector Current (ICM) | (1) | 300 | A | ||
| Diode Continuous Forward Current @ TC =100°C (IF) | 25 | A | |||
| Diode Maximum Forward Current (IFM) | 280 | A | |||
| Maximum Power Dissipation @ TC = 25°C (PD) | 250 | W | |||
| Maximum Power Dissipation @ TC = 100°C (PD) | 100 | W | |||
| Operating Junction Temperature (TJ) | -55 | +150 | °C | ||
| Storage Temperature Range (Tstg) | -55 | +150 | °C | ||
| Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds (TL) | 300 | °C | |||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-to-Case (RθJC(IGBT)) | -- | 0.5 | °&C/W | ||
| Thermal Resistance, Junction-to-Case (RθJC(DIODE)) | -- | 0.83 | °&C/W | ||
| Thermal Resistance, Junction-to-Ambient (RθJA) | -- | 25 | °&C/W | ||
| Electrical Characteristics of the IGBT | |||||
| Collector-Emitter Breakdown Voltage (BVCES) | VGE = 0V, IC = 250µA | 600 | -- | -- | V |
| Temperature Coefficient of Breakdown Voltage (ΔBVCES/ΔTJ) | VGE = 0V, IC = 1mA | -- | 0.6 | -- | V/°C |
| Collector Cut-Off Current (ICES) | VCE = VCES, VGE = 0V | -- | -- | 250 | µA |
| G-E Leakage Current (IGES) | VGE = VGES, VCE = 0V | -- | -- | ± 100 | nA |
| G-E Threshold Voltage (VGE(th)) | IC = 80mA, VCE = VGE | 3.5 | 4.5 | 6.5 | V |
| Collector to Emitter Saturation Voltage (VCE(sat)) | IC = 80A, VGE = 15V | -- | 2.1 | 2.6 | V |
| Collector to Emitter Saturation Voltage (VCE(sat)) | IC = 160A, VGE = 15V | -- | 2.6 | -- | V |
| Input Capacitance (Cies) | VCE = 30V, VGE = 0V, f = 1MHz | -- | 5000 | -- | pF |
| Output Capacitance (Coes) | VCE = 30V, VGE = 0V, f = 1MHz | -- | 600 | -- | pF |
| Reverse Transfer Capacitance (Cres) | VCE = 30V, VGE = 0V, f = 1MHz | -- | 200 | -- | pF |
| Turn-On Delay Time (td(on)) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE=15V Inductive Load, TC = 25°C | -- | 40 | -- | ns |
| Rise Time (tr) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE=15V Inductive Load, TC = 25°C | -- | 101 | -- | ns |
| Turn-Off Delay Time (td(off)) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE=15V Inductive Load, TC = 25°C | -- | 90 | 130 | ns |
| Fall Time (tf) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE=15V Inductive Load, TC = 25°C | -- | 75 | 150 | ns |
| Turn-On Switching Loss (Eon) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE=15V Inductive Load, TC = 25°C | -- | 2500 | -- | µJ |
| Turn-Off Switching Loss (Eoff) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE=15V Inductive Load, TC = 25°C | -- | 1760 | -- | µJ |
| Total Switching Loss (Ets) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE=15V Inductive Load, TC = 25°C | -- | 4260 | 5000 | µJ |
| Turn-On Delay Time (td(on)) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE = 15V Inductive Load, TC = 125°C | -- | 45 | -- | ns |
| Rise Time (tr) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE = 15V Inductive Load, TC = 125°C | -- | 105 | -- | ns |
| Turn-Off Delay Time (td(off)) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE = 15V Inductive Load, TC = 125°C | -- | 140 | 200 | ns |
| Fall Time (tf) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE = 15V Inductive Load, TC = 125°C | -- | 122 | 250 | ns |
| Turn-On Switching Loss (Eon) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE = 15V Inductive Load, TC = 125°C | -- | 2785 | -- | µJ |
| Turn-Off Switching Loss (Eoff) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE = 15V Inductive Load, TC = 125°C | -- | 3100 | -- | µJ |
| Total Switching Loss (Ets) | VCC = 300 V, IC = 80A, RG = 3.9Ω, VGE = 15V Inductive Load, TC = 125°C | -- | 5885 | -- | µJ |
| Total Gate Charge (Qg) | VCE = 300 V, IC = 80A, VGE = 15V | -- | 345 | 520 | nC |
| Gate-Emitter Charge (Qge) | VCE = 300 V, IC = 80A, VGE = 15V | -- | 60 | 100 | nC |
| Gate-Collector Charge (Qgc) | VCE = 300 V, IC = 80A, VGE = 15V | -- | 95 | 150 | nC |
| Internal Emitter Inductance (Le) | Measured 5mm from PKG | -- | 18 | -- | nH |
| Electrical Characteristics of DIODE | |||||
| Diode Forward Voltage (VFM) | IF = 25A, TC = 25°C | -- | 1.4 | 1.7 | V |
| Diode Forward Voltage (VFM) | IF = 25A, TC = 100°C | -- | 1.3 | -- | V |
| Diode Reverse Recovery Time (trr) | IF = 25A, di/dt = 200 A/µs, TC = 25°C | -- | 50 | 95 | ns |
| Diode Reverse Recovery Time (trr) | IF = 25A, di/dt = 200 A/µs, TC = 100°C | -- | 105 | -- | ns |
| Diode Peak Reverse Recovery Current (Irr) | IF = 25A, di/dt = 200 A/µs, TC = 25°C | -- | 4.5 | 10 | A |
| Diode Peak Reverse Recovery Current (Irr) | IF = 25A, di/dt = 200 A/µs, TC = 100°C | -- | 8.5 | -- | A |
| Diode Reverse Recovery Charge (Qrr) | IF = 25A, di/dt = 200 A/µs, TC = 25°C | -- | 112 | 375 | nC |
| Diode Reverse Recovery Charge (Qrr) | IF = 25A, di/dt = 200 A/µs, TC = 100°C | -- | 420 | -- | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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