Hefei Purple Horn E-Commerce Co., Ltd.
| Description | TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | FGH80N60FD2TU |
| Package | TO-247-3 |
| Model Number | FGH80N60FD2TU |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Description | TO-247-3 Single IGBTs RoHS | Mfr. Part # | FGH80N60FD2TU |
| Package | TO-247-3 | Model Number | FGH80N60FD2TU |
Utilizing novel field stop IGBT technology, ON Semiconductor's FGH80N60FD2 offers optimal performance for induction heating and PFC applications. This IGBT is designed for scenarios requiring low conduction and switching losses, featuring high current capability and a low saturation voltage of 1.8 V (Typ.) at 40 A. It boasts high input impedance and fast switching characteristics, making it a suitable choice for demanding applications.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Collector to Emitter Voltage | VCES | 600 | V | |||
| GateEmitter Voltage | VGES | ±20 | V | |||
| Collector Current | IC | TC = 25°C | 80 | A | ||
| Collector Current | IC | TC = 100°C | 40 | A | ||
| Pulsed Collector Current | ICM (Note 1) | TC = 25°C | 160 | A | ||
| Maximum Power Dissipation | PD | TC = 25°C | 290 | W | ||
| Maximum Power Dissipation | PD | TC = 100°C | 116 | W | ||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds | TL | 300 | °C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction to Case (IGBT) | R JC (IGBT) | 0.43 | °C/W | |||
| Thermal Resistance, Junction to Case (Diode) | R JA (Diode) | 1.45 | °C/W | |||
| Thermal Resistance, Junction to Ambient | R JA | 40 | °C/W | |||
| ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) | ||||||
| CollectorEmitter Breakdown Voltage | BVCES | VGE = 0 V, IC = 250 µA | 600 | - | - | V |
| Temperature Coefficient of Breakdown Voltage | BVCES / TJ | VGE = 0 V, IC = 250 µA | - | 0.6 | - | V/°C |
| Collector CutOff Current | ICES | VCE = VCES, VGE = 0 V | - | - | 250 | µA |
| GE Leakage Current | IGES | VGE = VGES, VCE = 0 V | - | - | ±400 | nA |
| GE Threshold Voltage | VGE(th) | IC = 250 µA, VCE = VGE | 4.5 | 5.5 | 7.0 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40 A, VGE = 15 V | - | 1.8 | 2.4 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40 A, VGE = 15 V, TC = 125°C | - | 2.05 | - | V |
| Input Capacitance | Cies | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 2110 | - | pF |
| Output Capacitance | Coes | - | 200 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 60 | - | pF | |
| SWITCHING CHARACTERISTICS (TC = 25°C unless otherwise noted) | ||||||
| TurnOn Delay Time | Td(on) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load | - | 21 | - | ns |
| Rise Time | Tr | - | 56 | - | ns | |
| TurnOff Delay Time | Td(off) | - | 126 | - | ns | |
| Fall Time | Tf | - | 50 | 100 | ns | |
| TurnOn Switching Loss | Eon | - | 1 | 1.5 | mJ | |
| TurnOff Switching Loss | Eoff | - | 0.52 | 0.78 | mJ | |
| Total Switching Loss | Ets | - | 1.52 | 2.28 | mJ | |
| SWITCHING CHARACTERISTICS (TC = 125°C unless otherwise noted) | ||||||
| TurnOn Delay Time | Td(on) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load | - | 20 | - | ns |
| Rise Time | Tr | - | 54 | - | ns | |
| TurnOff Delay Time | Td(off) | - | 131 | - | ns | |
| Fall Time | Tf | - | 70 | - | ns | |
| TurnOn Switching Loss | Eon | - | 1.1 | - | mJ | |
| TurnOff Switching Loss | Eoff | - | 0.78 | - | mJ | |
| Total Switching Loss | Ets | - | 1.88 | - | mJ | |
| Total Gate Charge | Qg | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 120 | - | nC |
| GateEmitter Charge | Qge | - | 14 | - | nC | |
| GateCollector Charge | Qgc | - | 58 | - | nC | |
| ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) | ||||||
| Diode Forward Voltage | VFM | IF = 15 A, TC = 25°C | - | 1.2 | 1.5 | V |
| Diode Forward Voltage | VFM | IF = 15 A, TC = 125°C | - | 1.0 | - | V |
| Diode Reverse Recovery Time | Trr | IF = 15 A, diF/dt = 200 A/µs, TC = 25°C | - | 61 | - | ns |
| Diode Reverse Recovery Time | Trr | IF = 15 A, diF/dt = 200 A/µs, TC = 125°C | - | 125 | - | ns |
| Diode Reverse Recovery Current | Irr | TC = 25°C | - | 4.8 | - | A |
| Diode Reverse Recovery Current | Irr | TC = 125°C | - | 8.4 | - | A |
| Diode Reverse Recovery Charge | Qrr | TC = 25°C | - | 146 | - | nC |
| Diode Reverse Recovery Charge | Qrr | TC = 125°C | - | 525 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!