Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 65.6ns |
| Pd - Power Dissipation | 268W |
| Td(on) | 19.2ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 23pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@40mA |
| Gate Charge(Qg) | 72.2nC@15V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Reverse Recovery Time(trr) | 31.8ns |
| Switching Energy(Eoff) | 297uJ |
| Turn-On Energy (Eon) | 1.01mJ |
| Input Capacitance(Cies) | 1.995nF |
| Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 70pF |
| Description | IGBT FS (Field Stop) 650V 80A 268W Through Hole TO-3PN |
| Mfr. Part # | FGA40T65SHD |
| Package | TO-3PN |
| Model Number | FGA40T65SHD |
View Detail Information
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Product Specification
| Td(off) | 65.6ns | Pd - Power Dissipation | 268W |
| Td(on) | 19.2ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 23pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@40mA | Gate Charge(Qg) | 72.2nC@15V |
| Operating Temperature | -55℃~+175℃@(Tj) | Reverse Recovery Time(trr) | 31.8ns |
| Switching Energy(Eoff) | 297uJ | Turn-On Energy (Eon) | 1.01mJ |
| Input Capacitance(Cies) | 1.995nF | Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 70pF | Description | IGBT FS (Field Stop) 650V 80A 268W Through Hole TO-3PN |
| Mfr. Part # | FGA40T65SHD | Package | TO-3PN |
| Model Number | FGA40T65SHD |
Leveraging novel field stop IGBT technology, this 3rd generation IGBT offers optimized performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are critical. It provides high current capability, a positive temperature coefficient for easy parallel operation, and a low saturation voltage.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector to Emitter Voltage | VCES | 650 | V | |||
| Gate to Emitter Voltage | VGES | -20 | 20 | V | ||
| Transient Gate to Emitter Voltage | -30 | 30 | V | |||
| Collector Current @ TC = 25C | IC | 80 | A | |||
| Collector Current @ TC = 100C | IC | 40 | A | |||
| Pulsed Collector Current @ TC = 25C | ILM (1) | VCC = 400 V, VGE = 15 V, IC =120 A, RG = 30 Inductive Load | 120 | A | ||
| Pulsed Collector Current | ICM (2) | Repetitive rating: Pulse width limited by max. junction temperature | 120 | A | ||
| Diode Forward Current @ TC = 25C | IF | 40 | A | |||
| Diode Forward Current @ TC = 100C | IF | 20 | A | |||
| Pulsed Diode Maximum Forward Current | IFM (2) | 120 | A | |||
| Maximum Power Dissipation @ TC = 25C | PD | 268 | W | |||
| Maximum Power Dissipation @ TC = 100C | PD | 134 | W | |||
| Operating Junction Temperature | TJ | -55 | 175 | C | ||
| Storage Temperature Range | Tstg | -55 | 175 | C | ||
| Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds | TL | 300 | C | |||
| Electrical Characteristics of the IGBT (TC = 25C unless otherwise noted) | ||||||
| Collector to Emitter Breakdown Voltage | BVCES | VGE = 0V, IC = 1 mA | 650 | V | ||
| Temperature Coefficient of Breakdown Voltage | BVCES / TJ | IC = 1 mA, Reference to 25C | -0.6 | V/C | ||
| Collector Cut-Off Current | ICES | VCE = VCES, VGE = 0 V | 250 | A | ||
| G-E Leakage Current | IGES | VGE = VGES, VCE = 0 V | 400 | nA | ||
| G-E Threshold Voltage | VGE(th) | IC = 40 mA, VCE = VGE | 3.5 | 5.5 | 7.5 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40 A, VGE = 15 V | 1.6 | 2.1 | V | |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40 A, VGE = 15 V, TC = 175C | 2.14 | V | ||
| Input Capacitance | Cies | VCE = 30 V, VGE = 0 V, f = 1MHz | 1995 | pF | ||
| Output Capacitance | Coes | 70 | pF | |||
| Reverse Transfer Capacitance | Cres | 23 | pF | |||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25C | 19.2 | ns | ||
| Rise Time | tr | 34.4 | ns | |||
| Turn-Off Delay Time | td(off) | 65.6 | ns | |||
| Fall Time | tf | 9.6 | ns | |||
| Turn-On Switching Loss | Eon | 1010 | J | |||
| Turn-Off Switching Loss | Eoff | 297 | J | |||
| Total Switching Loss | Ets | 1307 | J | |||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175C | 18.4 | ns | ||
| Rise Time | tr | 32.8 | ns | |||
| Turn-Off Delay Time | td(off) | 71.2 | ns | |||
| Fall Time | tf | 14.4 | ns | |||
| Turn-On Switching Loss | Eon | 1390 | J | |||
| Turn-Off Switching Loss | Eoff | 541 | J | |||
| Total Switching Loss | Ets | 1931 | J | |||
| Total Gate Charge | Qg | VCE = 400 V, IC = 40 A, VGE = 15 V | 72.2 | nC | ||
| Gate to Emitter Charge | Qge | 13.5 | nC | |||
| Gate to Collector Charge | Qgc | 28.5 | nC | |||
| Electrical Characteristics of the Diode (TC = 25C unless otherwise noted) | ||||||
| Diode Forward Voltage | VFM | IF = 20 A, TC = 25C | 2.2 | 2.8 | V | |
| Diode Forward Voltage | VFM | IF = 20 A, TC = 175C | 1.94 | V | ||
| Reverse Recovery Energy | Erec | IF =20 A, dIF/dt = 200 A/s, TC = 175C | 50 | J | ||
| Diode Reverse Recovery Time | trr | TC = 25C | 31.8 | ns | ||
| Diode Reverse Recovery Time | trr | TC = 175C | 192 | ns | ||
| Diode Reverse Recovery Charge | Qrr | TC = 25C | 50.6 | nC | ||
| Diode Reverse Recovery Charge | Qrr | TC = 175C | 699 | nC | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case, Max. | RJC(IGBT) | 0.56 | C/W | |||
| Thermal Resistance, Junction to Case, Max. | RJC(Diode) | 1.71 | C/W | |||
| Thermal Resistance, Junction to Ambient, Max. | RJA | 40 | C/W | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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