Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 165W |
| Td(off) | 87ns |
| Td(on) | 13ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 40pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Operating Temperature | -55℃~+150℃ |
| Gate Charge(Qg) | 63nC |
| Output Capacitance(Coes) | 110pF |
| Reverse Recovery Time(trr) | 35ns |
| Switching Energy(Eoff) | 260uJ |
| Turn-On Energy (Eon) | 380uJ |
| Description | IGBT FS (Field Stop) 600V 40A 165W Through Hole TO-220 |
| Mfr. Part # | FGP20N60UFDTU |
| Package | TO-220 |
| Model Number | FGP20N60UFDTU |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 165W | Td(off) | 87ns |
| Td(on) | 13ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 40pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | Operating Temperature | -55℃~+150℃ |
| Gate Charge(Qg) | 63nC | Output Capacitance(Coes) | 110pF |
| Reverse Recovery Time(trr) | 35ns | Switching Energy(Eoff) | 260uJ |
| Turn-On Energy (Eon) | 380uJ | Description | IGBT FS (Field Stop) 600V 40A 165W Through Hole TO-220 |
| Mfr. Part # | FGP20N60UFDTU | Package | TO-220 |
| Model Number | FGP20N60UFDTU |
The FGP20N60UFD is a 600 V, 20 A Field Stop IGBT from ON Semiconductor, utilizing novel field stop IGBT technology. It offers optimum performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, and PFC systems. Key features include high current capability, low saturation voltage (VCE(sat) = 1.8 V @ IC = 20 A), high input impedance, and fast switching. This product is RoHS Compliant.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector to Emitter Voltage | VCES | 600 | V | |||
| Gate to Emitter Voltage | VGES | ±20 | V | |||
| Transient Gate-to-Emitter Voltage | ±30 | V | ||||
| Collector Current @ TC = 25°C | IC | 40 | A | |||
| Collector Current @ TC = 100°C | IC | 20 | A | |||
| Pulsed Collector Current @ TC = 25°C | ICM (1) | 60 | A | |||
| Maximum Power Dissipation @ TC = 25°C | PD | 165 | W | |||
| Maximum Power Dissipation @ TC = 100°C | PD | 66 | W | |||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds | TL | 300 | °C | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case (IGBT) | RθJC(IGBT) | - | 0.76 | °C/W | ||
| Thermal Resistance, Junction to Case (Diode) | RθJC(Diode) | - | 2.51 | °C/W | ||
| Thermal Resistance, Junction to Ambient | RθJA | - | 62.5 | °C/W | ||
| Electrical Characteristics of the IGBT | ||||||
| Collector to Emitter Breakdown Voltage | BVCES | VGE = 0V, IC = 250μA | 600 | - | - | V |
| Temperature Coefficient of Breakdown Voltage | ΔBVCES / ΔTJ | VGE = 0 V, IC = 250 μA | - | 0.6 | - | V/°C |
| Collector Cut-Off Current | ICES | VCE = VCES, VGE = 0 V, TC = 25°C | - | - | 250 | μA |
| Collector Cut-Off Current | ICES | VCE = VCES, VGE = 0 V, TC = 125°C | - | - | 1 | mA |
| G-E Leakage Current | IGES | VGE = VGES, VCE = 0V | - | - | ±400 | nA |
| G-E Threshold Voltage | VGE(th) | IC = 250 μA, VCE = VGE | 4.0 | 5.0 | 6.5 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 20 A, VGE = 15 V | - | 1.8 | 2.4 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 20 A, VGE = 15 V, TC = 125°C | - | 2.0 | - | V |
| Input Capacitance | Cies | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 940 | - | pF |
| Output Capacitance | Coes | - | 110 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 40 | - | pF | |
| Switching Characteristics (TC = 25°C) | ||||||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load | - | 13 | - | ns |
| Rise Time | tr | - | 17 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 87 | - | ns | |
| Fall Time | tf | - | 32 | 64 | ns | |
| Turn-On Switching Loss | Eon | - | 0.38 | - | mJ | |
| Turn-Off Switching Loss | Eoff | - | 0.26 | - | mJ | |
| Total Switching Loss | Ets | - | 0.64 | - | mJ | |
| Switching Characteristics (TC = 125°C) | ||||||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load | - | 13 | - | ns |
| Rise Time | tr | - | 16 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 92 | - | ns | |
| Fall Time | tf | - | 63 | - | ns | |
| Turn-On Switching Loss | Eon | - | 0.41 | - | mJ | |
| Turn-Off Switching Loss | Eoff | - | 0.36 | - | mJ | |
| Total Switching Loss | Ets | - | 0.77 | - | mJ | |
| Total Gate Charge | Qg | VCE = 400 V, IC = 20 A, VGE = 15 V | - | 63 | - | nC |
| Gate to Emitter Charge | Qge | - | 7 | - | nC | |
| Gate to Collector Charge | Qgc | - | 32 | - | nC | |
| Electrical Characteristics of the Diode | ||||||
| Diode Forward Voltage | VFM | IF = 10 A, TC = 25°C | - | 1.9 | 2.5 | V |
| Diode Forward Voltage | VFM | IF = 10 A, TC = 125°C | - | 1.7 | - | V |
| Diode Reverse Recovery Time | trr | IF = 10 A, dIF/dt = 200 A/μs, TC = 25°C | - | 35 | - | ns |
| Diode Reverse Recovery Time | trr | IF = 10 A, dIF/dt = 200 A/μs, TC = 125°C | - | 57 | - | ns |
| Diode Reverse Recovery Charge | Qrr | TC = 25°C | - | 41 | - | nC |
| Diode Reverse Recovery Charge | Qrr | TC = 125°C | - | 96 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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