Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 168ns |
| Pd - Power Dissipation | 866W |
| Td(on) | 46.4ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 41.4pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.6V@100mA |
| Gate Charge(Qg) | 284nC@15V |
| Reverse Recovery Time(trr) | 152ns |
| Switching Energy(Eoff) | 1.6mJ |
| Turn-On Energy (Eon) | 3.1mJ |
| Input Capacitance(Cies) | 8.489nF |
| Pulsed Current- Forward(Ifm) | 400A |
| Output Capacitance(Coes) | 320pF |
| Description | 866W 1.2kV FS (Field Stop) TO-247-3LD Single IGBTs RoHS |
| Mfr. Part # | FGY100T120SWD |
| Package | TO-247-3LD |
| Model Number | FGY100T120SWD |
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Product Specification
| Td(off) | 168ns | Pd - Power Dissipation | 866W |
| Td(on) | 46.4ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 41.4pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.6V@100mA | Gate Charge(Qg) | 284nC@15V |
| Reverse Recovery Time(trr) | 152ns | Switching Energy(Eoff) | 1.6mJ |
| Turn-On Energy (Eon) | 3.1mJ | Input Capacitance(Cies) | 8.489nF |
| Pulsed Current- Forward(Ifm) | 400A | Output Capacitance(Coes) | 320pF |
| Description | 866W 1.2kV FS (Field Stop) TO-247-3LD Single IGBTs RoHS | Mfr. Part # | FGY100T120SWD |
| Package | TO-247-3LD | Model Number | FGY100T120SWD |
The FGY100T120SWD is a 1200 V, 100 A N-Channel IGBT Power Module utilizing novel Field Stop 7th generation IGBT technology and a Gen7 Diode in a TO247 3-lead package. It offers optimized performance with low switching and conduction losses, making it ideal for high-efficiency operations in applications such as Solar, UPS, and Energy Storage Systems (ESS).
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-to-Emitter Voltage | VCES | 1200 | V | |
| Gate-to-Emitter Voltage | VGES | ±20 | V | |
| Collector Current (TC = 100C) | IC | 100 | A | TC = 100C |
| Power Dissipation (TC = 100C) | PD | 433 | W | TC = 100C |
| Diode Forward Current (TC = 100C) | IF | 100 | A | TC = 100C |
| Maximum Junction Temperature | TJ | 175 | °C | |
| Collector-to-Emitter Saturation Voltage | VCE(SAT) | 1.35 - 2.0 | V | VGE = 15 V, IC = 100 A, TJ = 25°C |
| Gate Threshold Voltage | VGE(TH) | 5.6 - 7.4 | V | VGE = VCE, IC = 100 mA |
| Thermal Resistance, Junction-to-Case (IGBT) | R JC | 0.17 | °C/W | |
| Thermal Resistance, Junction-to-Case (Diode) | R JC | 0.29 | °C/W | |
| Thermal Resistance, Junction-to-Ambient | R JA | 40 | °C/W | |
| Forward Voltage (IF = 100 A, TJ = 25°C) | VF | 1.62 - 2.22 | V | IF = 100 A, TJ = 25°C |
| Reverse Recovery Time (IF = 100 A, TJ = 25°C) | trr | 261 | ns | VR = 600 V, IF = 100 A, dIF/dt = 1000 A/μs, TJ = 25°C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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