Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 92ns |
| Pd - Power Dissipation | 349W |
| Td(on) | 12ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 50pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA |
| Gate Charge(Qg) | 119nC@15V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Reverse Recovery Time(trr) | 36ns |
| Switching Energy(Eoff) | 260uJ |
| Turn-On Energy (Eon) | 870uJ |
| Input Capacitance(Cies) | 1.88nF |
| Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 180pF |
| Description | IGBT FS (Field Stop) 600V 80A 349W Through Hole TO-247 |
| Mfr. Part # | FGH40N60SMD |
| Package | TO-247 |
| Model Number | FGH40N60SMD |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Td(off) | 92ns | Pd - Power Dissipation | 349W |
| Td(on) | 12ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 50pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA | Gate Charge(Qg) | 119nC@15V |
| Operating Temperature | -55℃~+175℃@(Tj) | Reverse Recovery Time(trr) | 36ns |
| Switching Energy(Eoff) | 260uJ | Turn-On Energy (Eon) | 870uJ |
| Input Capacitance(Cies) | 1.88nF | Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 180pF | Description | IGBT FS (Field Stop) 600V 80A 349W Through Hole TO-247 |
| Mfr. Part # | FGH40N60SMD | Package | TO-247 |
| Model Number | FGH40N60SMD |
The FGH40N60SMD is a 600 V, 40 A Field Stop IGBT from Fairchild Semiconductor, utilizing novel field stop IGBT technology. It offers optimized performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, PFC, telecom, and ESS. Key advantages include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage (1.9V Typ. at 40A), high input impedance, and fast switching (EOFF = 6.5 uJ/A). The device also features tight parameter distribution and is RoHS compliant.
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCES | Collector to Emitter Voltage | 600 | V | |||
| VGES | Gate to Emitter Voltage | ± 20 | V | |||
| IC | Collector Current @ TC = 25°C | 80 | A | |||
| IC | Collector Current @ TC = 100°C | 40 | A | |||
| ICM (1) | Pulsed Collector Current @ TC = 25°C | 120 | A | |||
| IF | Diode Forward Current @ TC = 25°C | 40 | A | |||
| IF | Diode Forward Current @ TC = 100°C | 20 | A | |||
| IFM (1) | Pulsed Diode Maximum Forward Current | 120 | A | |||
| PD | Maximum Power Dissipation @ TC = 25°C | 349 | W | |||
| PD | Maximum Power Dissipation @ TC = 100°C | 174 | W | |||
| TJ | Operating Junction Temperature | -55 | +175 | °C | ||
| Tstg | Storage Temperature Range | -55 | +175 | °C | ||
| TL | Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds | 300 | °C | |||
| Thermal Characteristics | ||||||
| RθJC(IGBT) | Thermal Resistance, Junction to Case | 0.43 | °C/W | |||
| RθJC(Diode) | Thermal Resistance, Junction to Case | 1.5 | °C/W | |||
| RθJA | Thermal Resistance, Junction to Ambient | 40 | °C/W | |||
| Off Characteristics | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 250µA | 600 | V | ||
| ΔBVCES /ΔTJ | Temperature Coefficient of Breakdown Voltage | VGE = 0V, IC = 250µA | 0.6 | V/°C | ||
| ICES | Collector Cut-Off Current | VCE = VCES, VGE = 0V | 250 | µA | ||
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0V | ±400 | nA | ||
| On Characteristics | ||||||
| VGE(th) | G-E Threshold Voltage | IC = 250µA, VCE = VGE | 3.5 | 4.5 | 6.0 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40A, VGE = 15V | 1.9 | 2.5 | V | |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40A, VGE = 15V, TC = 175°C | 2.1 | V | ||
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VCE = 30V, VGE = 0V, f = 1MHz | 1880 | pF | ||
| Coes | Output Capacitance | 180 | pF | |||
| Cres | Reverse Transfer Capacitance | 50 | pF | |||
| Switching Characteristics (TC = 25°C) | ||||||
| td(on) | Turn-On Delay Time | VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load | 12 | 16 | ns | |
| tr | Rise Time | 20 | 28 | ns | ||
| td(off) | Turn-Off Delay Time | 92 | 120 | ns | ||
| tf | Fall Time | 13 | 17 | ns | ||
| Eon | Turn-On Switching Loss | 0.87 | 1.30 | mJ | ||
| Eoff | Turn-Off Switching Loss | 0.26 | 0.34 | mJ | ||
| Ets | Total Switching Loss | 1.13 | 1.64 | mJ | ||
| Switching Characteristics (TC = 175°C) | ||||||
| td(on) | Turn-On Delay Time | VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load | 15 | ns | ||
| tr | Rise Time | 22 | ns | |||
| td(off) | Turn-Off Delay Time | 116 | ns | |||
| tf | Fall Time | 16 | ns | |||
| Eon | Turn-On Switching Loss | 0.97 | mJ | |||
| Eoff | Turn-Off Switching Loss | 0.60 | mJ | |||
| Ets | Total Switching Loss | 1.57 | mJ | |||
| Electrical Characteristics of the IGBT (Continued) | ||||||
| Qg | Total Gate Charge | VCE = 400V, IC = 40A, VGE = 15V | 119 | 180 | nC | |
| Qge | Gate to Emitter Charge | 13 | 20 | nC | ||
| Qgc | Gate to Collector Charge | 58 | 90 | nC | ||
| Electrical Characteristics of the Diode | ||||||
| VFM | Diode Forward Voltage | IF = 20A, TC = 25°C | 2.3 | 2.8 | V | |
| VFM | Diode Forward Voltage | IF = 20A, TC = 175°C | 1.67 | V | ||
| Erec | Reverse Recovery Energy | IF =20A, dIF/dt = 200A/µs, TC = 175°C | 48.9 | µJ | ||
| trr | Diode Reverse Recovery Time | TC = 25°C | 36 | ns | ||
| trr | Diode Reverse Recovery Time | TC = 175°C | 110 | ns | ||
| Qrr | Diode Reverse Recovery Charge | TC = 25°C | 46.8 | nC | ||
| Qrr | Diode Reverse Recovery Charge | TC = 175°C | 445 | nC | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!