Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 882W |
| Td(off) | 475ns |
| Td(on) | 40ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 100pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@40mA |
| Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 370nC@15V |
| Reverse Recovery Time(trr) | 65ns |
| Switching Energy(Eoff) | 1.1mJ |
| Turn-On Energy (Eon) | 2.7mJ |
| Pulsed Current- Forward(Ifm) | 240A |
| Output Capacitance(Coes) | 180pF |
| Description | 882W 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | FGY40T120SMD |
| Package | TO-247-3 |
| Model Number | FGY40T120SMD |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 882W | Td(off) | 475ns |
| Td(on) | 40ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 100pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@40mA | Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 370nC@15V | Reverse Recovery Time(trr) | 65ns |
| Switching Energy(Eoff) | 1.1mJ | Turn-On Energy (Eon) | 2.7mJ |
| Pulsed Current- Forward(Ifm) | 240A | Output Capacitance(Coes) | 180pF |
| Description | 882W 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS | Mfr. Part # | FGY40T120SMD |
| Package | TO-247-3 | Model Number | FGY40T120SMD |
The FGY40T120SMD is a Field Stop Trench IGBT from ON Semiconductor, utilizing innovative FS Trench technology for optimal performance in hard switching applications. It offers a positive temperature coefficient, high speed switching, and low saturation voltage, making it suitable for solar inverters, UPS, welders, and PFC applications.
| Symbol | Description | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VCES | Collector to Emitter Voltage | 1200 | V | |||
| VGES | Gate to Emitter Voltage | ±25 | V | |||
| ILM (1) | Clamped Inductive Load Current @ TC = 25oC | 160 | A | |||
| ICM (2) | Pulsed Collector Current | 160 | A | |||
| IF | Diode Continuous Forward Current @ TC = 25oC | 80 | A | |||
| IFM | Diode Maximum Forward Current | 240 | A | |||
| PD | Maximum Power Dissipation @ TC = 25oC | 882 | W | |||
| TJ | Operating Junction Temperature | -55 | +175 | oC | ||
| Tstg | Storage Temperature Range | -55 | +175 | oC | ||
| Thermal Characteristics | ||||||
| RJC(IGBT) | Thermal Resistance, Junction to Case | -- | 0.17 | oC/W | ||
| RJC(Diode) | Thermal Resistance, Junction to Case | -- | 0.55 | oC/W | ||
| RJA | Thermal Resistance, Junction to Ambient | -- | 40 | oC/W | ||
| Electrical Characteristics of the IGBT | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0 V, IC = 250 uA | 1200 | - | - | V |
| ICES | Collector Cut-Off Current | VCES = VCES, VGE = 0 V | - | - | 250 | uA |
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0 V | - | - | ±400 | nA |
| VGE(th) | G-E Threshold Voltage | IC = 40 mA, VCE = VGE | 4.9 | 6.2 | 7.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40 A, VGE = 15 V, TC = 25oC | - | 1.8 | 2.4 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40 A, VGE = 15 V, TC = 175oC | - | 2.0 | - | V |
| Cies | Input Capacitance | VCE = 30 V, VGE = 0 V, f = 1MHz | - | 4300 | - | pF |
| Coes | Output Capacitance | - | 180 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 100 | - | pF | |
| td(on) | Turn-On Delay Time | VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25oC | - | 40 | - | ns |
| tr | Rise Time | - | 47 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 475 | - | ns | |
| tf | Fall Time | - | 10 | - | ns | |
| Eon | Turn-On Switching Loss | - | 2.7 | - | mJ | |
| Eoff | Turn-Off Switching Loss | - | 1.1 | - | mJ | |
| Ets | Total Switching Loss | - | 3.8 | - | mJ | |
| Qg | Total Gate Charge | VCE = 600 V, IC = 40 A, VGE = 15 V | - | 370 | - | nC |
| Qge | Gate to Emitter Charge | - | 23 | - | nC | |
| Qgc | Gate to Collector Charge | - | 210 | - | nC | |
| Electrical Characteristics of the DIODE | ||||||
| VFM | Diode Forward Voltage | IF = 40 A, TC = 25oC | - | 3.8 | 4.8 | V |
| VFM | Diode Forward Voltage | IF = 40 A, TC = 175oC | - | 2.7 | - | V |
| trr | Diode Reverse Recovery Time | VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 25oC | - | 65 | - | ns |
| Qrr | Diode Reverse Recovery Charge | - | 234 | - | nC | |
| Erec | Reverse Recovery Energy | VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 175oC | - | 97 | - | uJ |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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