Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 208W |
| Td(off) | 330ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 55ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Gate Charge(Qg) | 137nC@15V |
| Reverse Recovery Time(trr) | 270ns |
| Switching Energy(Eoff) | 310uJ |
| Turn-On Energy (Eon) | 1.9mJ |
| Description | IGBT FS (Field Stop) 1.2kV 30A 208W Through Hole TO-247-3 |
| Mfr. Part # | SPT15N120T1 |
| Package | TO-247-3 |
| Model Number | SPT15N120T1 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 208W | Td(off) | 330ns |
| Operating Temperature | -40℃~+150℃ | Td(on) | 55ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA | Gate Charge(Qg) | 137nC@15V |
| Reverse Recovery Time(trr) | 270ns | Switching Energy(Eoff) | 310uJ |
| Turn-On Energy (Eon) | 1.9mJ | Description | IGBT FS (Field Stop) 1.2kV 30A 208W Through Hole TO-247-3 |
| Mfr. Part # | SPT15N120T1 | Package | TO-247-3 |
| Model Number | SPT15N120T1 |
The SPT15N120T1 is a 1200V / 15A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for tight parameter distribution, high ruggedness, temperature stable behavior, and a short circuit withstand time of 10s. Its low VCE(SAT) and easy parallel switching capability make it ideal for applications such as frequency converters and motor drives.
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| IGBT Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250A | 1200 | - | - | V |
| Gate threshold voltage | VGE(th) | VGE=VCE, IC=250A | 5.2 | 6.0 | 6.8 | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=15A Tj = 25C | - | 1.7 | - | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=15A Tj = 150C | - | 2.1 | - | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V Tj = 25C | - | - | 100 | A |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V Tj = 150C | - | - | 1000 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=15A | - | 10 | - | S |
| Dynamic Characteristics (IGBT) | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 1870 | - | pF |
| Output capacitance | Coes | - | - | 70 | - | pF |
| Reverse transfer capacitance | Cres | - | - | 45 | - | pF |
| Gate charge | QG | VCC = 960V, IC = 15A, VGE = 15V | - | 137 | - | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC10us VCC=600V, Tjstart=25C | - | 140 | - | A |
| Switching Characteristics (Inductive Load) | ||||||
| Turn-on delay time | td(on) | VCC = 600V, IC = 15A, VGE = 0/15V, Rg=42, Tj = 25C | - | 55 | - | ns |
| Rise time | tr | - | - | 21 | - | ns |
| Turn-on energy | Eon | - | - | 1.9 | - | mJ |
| Turn-off delay time | td(off) | - | - | 330 | - | ns |
| Fall time | tf | - | - | 200 | - | ns |
| Turn-off energy | Eoff | - | - | 0.31 | - | mJ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VFM | IF = 15A | - | 2.7 | - | V |
| Reverse Recovery Time | Trr | IF= 15A, di/dt= 600A/s | - | 270 | - | ns |
| Reverse Recovery Current | Irr | - | - | 10 | - | A |
| Reverse Recovery Charge | Qrr | - | - | 1800 | - | nC |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | - | - | - | 1200 | V |
| DC collector current, limited by Tjmax | IC | TC = 25C | - | - | 30 | A |
| DC collector current, limited by Tjmax | IC | TC = 100C | - | - | 15 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 25C | - | - | 30 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 100C | - | - | 15 | A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | - | - | - | 60 | A |
| Short Circuit Withstand Time | Tsc | VGE= 15V, VCE 600V | - | - | 10 | s |
| Power dissipation , Tj=25 | Ptot | - | - | - | 208 | W |
| Operating junction temperature | Tj | - | -40 | - | 150 | C |
| Storage temperature | Ts | - | -55 | - | 150 | C |
| Soldering temperature, wave soldering 1.6mm from case for 10s | - | - | - | - | 260 | C |
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | - | - | - | 0.65 | K/W |
| Diode thermal resistance, junction - case | R(j-c) | - | - | - | 1.5 | K/W |
| Thermal resistance, junction - ambient | R(j-a) | - | - | - | 40 | K/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!