Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 260W |
| Td(off) | 170ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 60ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 3.8nF@30V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Gate Charge(Qg) | 162nC@15V |
| Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | 2.2mJ |
| Description | IGBT FS (Field Stop) 650V 100A 260W Through Hole TO-247-3 |
| Mfr. Part # | IKW50N65H5 |
| Package | TO-247-3 |
| Model Number | IKW50N65H5 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 260W | Td(off) | 170ns |
| Operating Temperature | -40℃~+150℃ | Td(on) | 60ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | Input Capacitance(Cies) | 3.8nF@30V |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Gate Charge(Qg) | 162nC@15V | Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 600uJ | Turn-On Energy (Eon) | 2.2mJ |
| Description | IGBT FS (Field Stop) 650V 100A 260W Through Hole TO-247-3 | Mfr. Part # | IKW50N65H5 |
| Package | TO-247-3 | Model Number | IKW50N65H5 |
The IKW50N65H5 650V Trench Field Stop IGBT offers low switching losses, high energy efficiency, and high avalanche ruggedness. Its Trench-Stop Technology ensures high-speed switching, robust performance, low VCEsat, and easy parallel switching capability. This IGBT is ideal for motion control, solar applications, and welding machines.
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| DC collector current, limited by Tjmax | IC | 100 / 50 | A | TC = 25C / 100C |
| Diode Forward current, limited by Tjmax | IF | 100 / 50 | A | TC = 25C / 100C |
| Turn off safe operating area | 200 | A | VCE 650V, Tj 150C | |
| Power dissipation, Tj=25 | Ptot | 260 | W | Tj=25 |
| Operating junction temperature | Tj | -40...+150 | C | |
| Storage temperature | Ts | -55...+150 | C | |
| Soldering temperature, wave soldering 1.6mm from case for 10s | 260 | C | ||
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.48 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Electrical Characteristics (IGBT) | ||||
| Static Collector-Emitter Breakdown Voltage | BVCES | 650 | V | VGE=0V , IC=250uA / 1mA |
| Gate Threshold Voltage | VGE(th) | 4.0 / 5.0 / 6.0 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.65 / 2.05 | V | VGE=15V, IC=50A, Tj = 25C / 150C |
| Zero gate voltage collector current | ICES | 0.1 / 40 / 1000 | A | VCE = 650V, VGE = 0V, Tj = 25C / 150C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 50 | S | VCE = 20V, IC = 50A |
| Dynamic Characteristics (IGBT) | ||||
| Input capacitance | Cies | 3800 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 130 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Reverse transfer capacitance | Cres | 70 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Gate charge | QG | 162 | nC | VCC = 520V, IC = 50A, VGE = 15V |
| Switching Characteristics (Inductive Load, Tj=25) | ||||
| Turn-on Delay Time | td(on) | 60 | ns | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Rise Time | tr | 55 | ns | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Turn-off Delay Time | td(off) | 170 | ns | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Fall Time | tf | 80 | ns | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Turn-on Energy | Eon | 2.2 | mJ | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Turn-off Energy | Eoff | 0.6 | mJ | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Switching Characteristics (Inductive Load, Tj=150) | ||||
| Turn-on Delay Time | td(on) | 60 | ns | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Rise Time | tr | 60 | ns | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Turn-off Delay Time | td(off) | 172 | ns | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Fall Time | tf | 90 | ns | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Turn-on Energy | Eon | 2.35 | mJ | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Turn-off Energy | Eoff | 0.82 | mJ | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 |
| Electrical Characteristics of the DIODE | ||||
| Diode Forward Voltage | VFM | 2.4 | V | IF = 50A, Tj = 25 |
| Reverse Recovery Time | Trr | 90 | ns | IF= 40A, VR = 300V, di/dt= 600A/s, Tj = 25 |
| Reverse Recovery Current | Irr | 17 | A | IF= 40A, VR = 300V, di/dt= 600A/s, Tj = 25 |
| Reverse Recovery Charge | Qrr | 900 | nC | IF= 40A, VR = 300V, di/dt= 600A/s, Tj = 25 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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