Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 230ns |
| Pd - Power Dissipation | 417W |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 60ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Gate Charge(Qg) | 270nC@15V |
| Reverse Recovery Time(trr) | 250ns |
| Switching Energy(Eoff) | 800uJ |
| Turn-On Energy (Eon) | 2.9mJ |
| Description | IGBT FS (Field Stop) 1.2kV 80A 417W Through Hole TO-247-3 |
| Mfr. Part # | SPT40N120F1C |
| Package | TO-247-3 |
| Model Number | SPT40N120F1C |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Td(off) | 230ns | Pd - Power Dissipation | 417W |
| Operating Temperature | -40℃~+150℃ | Td(on) | 60ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA | Gate Charge(Qg) | 270nC@15V |
| Reverse Recovery Time(trr) | 250ns | Switching Energy(Eoff) | 800uJ |
| Turn-On Energy (Eon) | 2.9mJ | Description | IGBT FS (Field Stop) 1.2kV 80A 417W Through Hole TO-247-3 |
| Mfr. Part # | SPT40N120F1C | Package | TO-247-3 |
| Model Number | SPT40N120F1C |
The SPT40N120F1C is a high-performance IGBT with Trench-Stop Technology, offering exceptional reliability and efficiency. It features a high breakdown voltage of 1200V, high-speed switching, and excellent ruggedness. Its positive temperature coefficient in VCEsat ensures easy parallel switching, and it boasts enhanced avalanche capability. This product is ideal for demanding applications such as Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |
| DC collector current | IC | 80 / 40 | A | TC = 25C / TC = 100C |
| Diode Forward current | IF | 80 / 40 | A | TC = 25C / TC = 100C |
| Continuous Gate-emitter voltage | VGE | ±20 | V | |
| Transient Gate-emitter voltage | VGE | ±30 | V | |
| Pulsed Collector Current | ICM | 160 | A | VGE =15V, tp limited by Tjmax |
| Diode Pulsed Current | IFpuls | 160 | A | tp limited by Tjmax |
| Short Circuit Withstand Time | Tsc | 10 | μs | VGE= 15V, VCE≤ 600V |
| Power dissipation | Ptot | 417 | W | Tj=25°C |
| Operating junction temperature | Tj | -40...+150 | °C | |
| Storage temperature | Ts | -55...+150 | °C | |
| IGBT thermal resistance, junction - case | Rθ(j-c) | 0.3 | K/W | |
| Diode thermal resistance, junction - case | Rθ(j-c) | 0.7 | K/W | |
| Thermal resistance, junction - ambient | Rθ(j-a) | 40 | K/W | |
| Static Collector-Emitter breakdown voltage | BVCES | 1200 / 1300 | V | VGE=0V , IC=250μA |
| Gate threshold voltage | VGE(th) | 5.1 / 5.8 / 6.4 | V | VGE=VCE, IC=250μA |
| Collector-Emitter Saturation voltage | VCE(sat) | 2.0 / 2.5 | V | VGE=15V, IC=40A, Tj = 25°C / Tj = 150°C |
| Zero gate voltage collector current | ICES | 10 / 2500 | μA | VCE = 1200V, VGE = 0V, Tj = 25°C / Tj = 150°C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = ± 20V |
| Transconductance | gfs | 15 | S | VCE=20V, IC=15A |
| Input capacitance | Cies | 4400 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 180 | pF | |
| Reverse transfer capacitance | Cres | 100 | pF | |
| Gate charge | QG | 270 | nC | VCC = 960V, IC = 40A, VGE = 15V |
| Short circuit collector current | ICSC | 240 | A | VGE=15V,tSC≤10us, VCC=600V, Tjstart=25°C |
| Turn-on delay time | td(on) | 60 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12Ω, Tj = 25°C |
| Rise time | tr | 27 | ns | |
| Turn-on energy | Eon | 2.9 | mJ | |
| Turn-off delay time | td(off) | 230 | ns | |
| Fall time | tf | 70 | ns | |
| Turn-off energy | Eoff | 0.8 | mJ | |
| Diode Forward Voltage | VFM | 2.6 | V | IF = 40A |
| Reverse Recovery Time | Trr | 250 | ns | IF= 40A, VR = 600V, di/dt= 400A/μs |
| Reverse Recovery Current | Irr | 15 | A | |
| Reverse Recovery Charge | Qrr | 600 | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!