Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| Input Capacitance(Ciss) | 990pF |
| Output Capacitance(Coss) | 125pF |
| Description | 50W TO-3P Single IGBTs RoHS |
| Mfr. Part # | 2SK2225-80-E#T2 |
| Package | TO-3P |
| Model Number | 2SK2225-80-E#T2 |
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Product Specification
| Pd - Power Dissipation | 50W | Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| Input Capacitance(Ciss) | 990pF | Output Capacitance(Coss) | 125pF |
| Description | 50W TO-3P Single IGBTs RoHS | Mfr. Part # | 2SK2225-80-E#T2 |
| Package | TO-3P | Model Number | 2SK2225-80-E#T2 |
The 2SK2225-80-E is a high-speed power switching MOS FET featuring a high breakdown voltage of 1500V and a drain current of 2A. It offers low drive current and is suitable for applications requiring fast switching characteristics. This component is classified under the "Standard" quality grade, making it appropriate for a wide range of electronic equipment.
| Item | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Drain to source voltage | VDSS | 1500 | V | |
| Gate to source voltage | VGSS | ±20 | V | |
| Drain current | ID | 2 | A | |
| Drain peak current | ID(pulse) | 7 | A | Notes1 |
| Body to drain diode reverse drain current | IDR | 2 | A | |
| Channel dissipation | Pch | 50 | W | Notes2 |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature | Tstg | –55 to +150 | °C | |
| Drain to source breakdown voltage | V(BR)DSS | 1500 | V | ID = 10 mA, VGS = 0 |
| Gate to source leak current | IGSS | ±1 | µA | VGS = ±20 V, VDS = 0 |
| Zero gate voltage drain current | IDSS | 500 | µA | VDS =1200 V, VGS = 0 |
| Gate to source cutoff voltage | VGS(off) | 2.0 to 4.0 | V | ID = 1 mA, VDS = 10 V |
| Static drain to source on state resistance | RDS(on) | 9 to 12 | Ω | ID = 1 A, VGS = 15 V Notes3 |
| Forward transfer admittance | |yfs| | 0.45 to 0.75 | S | ID = 1 A, VDS = 20 V Notes3 |
| Input capacitance | Ciss | 990 | pF | VDS = 10 V, VGS = 0, f = 1 MHz |
| Output capacitance | Coss | 125 | pF | VDS = 10 V, VGS = 0, f = 1 MHz |
| Reverse transfer capacitance | Crss | 60 | pF | VDS = 10 V, VGS = 0, f = 1 MHz |
| Turn-on delay time | td(on) | 17 | ns | ID = 1 A, VGS = 10 V, RL = 30 Ω |
| Rise time | tr | 50 | ns | ID = 1 A, VGS = 10 V, RL = 30 Ω |
| Turn-off delay time | td(off) | 150 | ns | ID = 1 A, VGS = 10 V, RL = 30 Ω |
| Fall time | tf | 50 | ns | ID = 1 A, VGS = 10 V, RL = 30 Ω |
| Body-drain diode forward voltage | VDF | 0.9 | V | IF = 2 A, VGS = 0 |
| Body-drain diode reverse recovery time | trr | 1750 | ns | IF = 2 A, VGS = 0, diF / dt = 100 A / µs |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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