Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 92ns |
| Pd - Power Dissipation | 349W |
| Td(on) | 12ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 50pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA |
| Gate Charge(Qg) | 119nC |
| Operating Temperature | - |
| Reverse Recovery Time(trr) | 42ns |
| Switching Energy(Eoff) | 260uJ |
| Turn-On Energy (Eon) | 820uJ |
| Input Capacitance(Cies) | 1.88nF |
| Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 180pF |
| Description | IGBT FS (Field Stop) 650V Through Hole TO-3P |
| Mfr. Part # | FGA40N65SMD |
| Package | TO-3P |
| Model Number | FGA40N65SMD |
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Product Specification
| Td(off) | 92ns | Pd - Power Dissipation | 349W |
| Td(on) | 12ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 50pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA | Gate Charge(Qg) | 119nC |
| Operating Temperature | - | Reverse Recovery Time(trr) | 42ns |
| Switching Energy(Eoff) | 260uJ | Turn-On Energy (Eon) | 820uJ |
| Input Capacitance(Cies) | 1.88nF | Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 180pF | Description | IGBT FS (Field Stop) 650V Through Hole TO-3P |
| Mfr. Part # | FGA40N65SMD | Package | TO-3P |
| Model Number | FGA40N65SMD |
The FGA40N65SMD is a 650 V, 40 A Field Stop IGBT from ON Semiconductor, formerly Fairchild Semiconductor. This second-generation IGBT series utilizes innovative Field Stop IGBT technology, offering optimal performance with low conduction and switching losses. It is designed for critical applications such as photovoltaic inverters, UPS, welding machines, induction heating, communication power supplies, and ESS.
| Device Number | Package | Collector-Emitter Voltage (VCES) | Collector Current (IC @ TC = 25C) | Collector Current (IC @ TC = 100C) | Collector Pulse Current (ICM) | Diode Forward Current (IF @ TC = 25C) | Diode Forward Current (IF @ TC = 100C) | Diode Max Forward Pulse Current (IFM) | Max Power Dissipation (PD @ TC = 25C) | Max Power Dissipation (PD @ TC = 100C) | Operating Junction Temperature (TJ) | Storage Temperature Range (Tstg) | Pin Temperature for Soldering (TL) | RJC(IGBT) | RJC(Diode) | RJA | VGE(th) | VCE(sat) @ IC = 40 A, VGE = 15 V | Cies | Coes | Cres | td(on) @ TC = 25C | tr @ TC = 25C | td(off) @ TC = 25C | tf @ TC = 25C | Eon @ TC = 25C | Eoff @ TC = 25C | Ets @ TC = 25C | td(on) @ TC = 175C | tr @ TC = 175C | td(off) @ TC = 175C | tf @ TC = 175C | Eon @ TC = 175C | Eoff @ TC = 175C | Ets @ TC = 175C | Qg | Qge | Qgc | VFM @ IF = 20 A, TC = 25C | VFM @ IF = 20 A, TC = 175C | Erec @ TC = 175C | trr @ TC = 25C | trr @ TC = 175C | Irr @ TC = 25C | Irr @ TC = 175C | Qrr @ TC = 25C | Qrr @ TC = 175C |
| FGA40N65SMD | TO-3P | 650 V | 80 A | 40 A | 120 A | 40 A | 20 A | 120 A | 349 W | 174 W | -55 to +175 C | -55 to +175 C | 300 C | 0.43 C/W | 1.5 C/W | 40 C/W | 3.5 - 6.0 V | 1.9 V | 1880 pF | 180 pF | 50 pF | 12 ns | 20 ns | 92 ns | 13 ns | 0.82 mJ | 0.26 mJ | 1.08 mJ | 15 ns | 22 ns | 116 ns | 16 ns | 1.08 mJ | 0.60 mJ | 1.68 mJ | 119 - 180 nC | 13 - 20 nC | 58 - 90 nC | 2.1 - 2.6 V | 1.7 V | 96 J | 42 ns | 200 ns | 3.6 A | 8.0 A | 76 nC | 800 nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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